The STTH806 uses ST Turbo2 600 V technology.
This device is specially suited for use in switching
STTH806G-TRSTTH806G
STTH806DSTTH806D
STTH806DIRGSTTH806DI
power supplies, and industrial applications.
Table 1.Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
A
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Repetitive peak reverse voltage600V
TO-220AC, D
2
PA K3 0A
RMS forward current
TO-220 Ins24A
T
= 140° CTO-220AC, D2PA K8A
Average forward current, δ = 0.5
c
= 120° CTO-220 Ins8A
T
c
Surge non repetitive forward current tp = 10 ms Sinusoidal90A
Storage temperature range-65 to + 175°C
stg
Maximum operating junction temperature
T
j
dP
--------------dT
tot
j
1
--------------------------<
R
th j a–()
(1)
175°C
August 2006 Rev 21/9
www.st.com
Page 2
CharacteristicsSTTH806
1 Characteristics
Table 2.Thermal parameters
SymbolParameterValueUnit
2
R
th(j-c)
Table 3.Static electrical characteristics
Junction to case
TO-220AC, D
TO-220AC Ins4
PA K2 .5
° C/W
SymbolParameterTest conditionsMin.TypMax.Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
T
j
T
= 150° C20200
j
= 25° C
T
j
T
= 150° C1.101.40
j
V
R
I
= 8 A
F
= V
RRM
8
1.85
To evaluate the conduction losses use the following equation:
P = 1.07 x I
Table 4.Dynamic characteristics
SymbolParameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
F(AV)
+ 0.041 I
F2(RMS)
Test conditions
= 0.5 A, Irr = 0.25 A, IR = 1 A,
I
F
Tj = 25° C
I
= 1 A, dIF/dt = -50 A/µs,
F
= 30 V, Tj = 25° C
V
R
I
= 8 A, dIF/dt = -100 A/µs,
F
VR = 400 V, Tj = 25° C
= 8 A dIF/dt = 100 A/µs
I
F
VFR = 1.1 x V
= 8 A dIF/dt = 100 A/µs
I
F
= 1.1 x V
V
FR
, Tj = 25° C
Fmax
, Tj = 25° C
Fmax
Min.TypMax.Unit
35
4055
4.56.5
200ns
3.5V
µA
V
ns
2/9
Page 3
STTH806Characteristics
Figure 1.Conduction losses versus
average current
P(W)
F(AV)
15.0
12.5
10.0
7.5
5.0
2.5
0.0
012345678910
δ = 0.05
δ = 0.1
δ = 0.2
I(A)
F(AV)
δ = 0.5
δ
δ = 1
T
=tp/T
Figure 3.Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-031.E-021.E-011.E+00
t (s)
p
Figure 2.Forward voltage drop versus
forward current
I (A)
FM
100
90
80
70
60
50
40
30
20
tp
10
0
0.00.51.01.52.02.53.03.54.0
T=150°C
j
(typical values)
T=150°C
j
(maximum values)
(maximum values)
V (V)
FM
T=25°C
j
Figure 4.Peak reverse recovery current
versus dI
I (A)
RM
14
V =400V
R
T=125°C
j
12
10
8
6
4
2
0
050100150 200 250 300 350 400 450 500
I =0.25 x I
FF(AV)
/dt (typical values)
F
I=I
I =0.5 x I
FF(AV)
F F(AV)
dI /dt(A/µs)
F
I =2 x I
F F(AV)
Figure 5.Reverse recovery time versus
dI
/dt (typical values)
F
t (ns)
rr
300
250
I =2 x I
200
150
100
50
0
050 100 150 200 250 300 350 400 450 500
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =0.5 x I
FF(AV)
V =400V
R
T=125°C
j
Figure 6.Reverse recovery charges versus
dIF/dt (typical values)
Q (nC)
rr
450
V =400V
R
T=125°C
j
400
350
300
250
200
150
100
50
050100 150 200 250 300 350 400 450 500
3/9
I =2 x I
F F(AV)
dI /dt(A/µs)
F
I=I
F F(AV)
I =0.5 x I
FF(AV)
Page 4
CharacteristicsSTTH806
Figure 7.Softness factor versus
dI
/dt (typical values)
F
S factor
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
050 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
I 2 x I
≤
FF(AV)
V = 400V
R
T = 125° C
j
Figure 9.Transient peak forward voltage
versus dI
V (V)
FP
14
I=I
F F(AV)
T=125°C
j
12
10
8
6
4
2
0
0100200300400500
/dt (typical values)
F
dI /dt(A/µs)
F
Figure 8.Relative variations of dynamic
parameters versus junction
temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
255075100125
S factor
I
RM
T (°C)
Q
RR
j
I=I
F F(AV)
V =400V
R
Reference:T =125°C
j
Figure 10. Forward recovery time versus
dIF/dt (typical values)
t (ns)
fr
200
180
160
140
120
100
80
60
40
20
0
0100200300400500
dI /dt(A/µs)
F
I=I
F F(AV)
V =1.1 x V max.
FRF
T=125°C
j
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
10
V (V)
1
1101001000
R
4/9
F=1MHz
V =30mV
OSCRMS
T=25°C
j
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, e
R(°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0510152025303540
= 35 µm)
CU
S(cm²)
(Cu)
D²PAK
Page 5
STTH806Package mechanical data
m
D
2 Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.80 Nm
Maximum torque value: 1.0 Nm
Table 5.D
2
PAK Dimensions
Dimensions
Ref.
MillimetersInches
Min.MaxMin.Max.
A
E
L2
C2
A4.404.600.1730.181
A12.492.690.0980.106
A20.030.230.0010.009
B0.700.930.0270.037
L
L3
A1
B21.141.700.0450.067
C0.450.600.0170.024
C21.231.360.0480.054
B2
B
C
R
D8.959.350.3520.368
E10.0010.400.3930.409
G
G4.885.280.1920.208
A2
L15.0015.850.5900.624
L21.271.400.0500.055
M
*
V2
L31.401.750.0550.069
M2.403.200.0940.126
* FLAT ZONE NO LESS THAN 2m
R0.40 typ.0.016 typ.
V20°8°0°8°
Figure 13. D2PAK Footprint dimensions (in mm)
16.90
10.30
8.90
5/9
5.08
1.30
3.70
Page 6
Package mechanical dataSTTH806
Table 6.TO-220AC Dimensions
Dimensions
L2
F1
Ref.
Millimeters Inches
Min.Max.Min.Max.
H2
Ø I
L5
A
C
L7
L6
A4.404.600.1730.181
C1.231.320.0480.051
D2.402.720.0940.107
E0.490.700.0190.027
F0.610.880.0240.034
F11.141.700.0440.066
G4.955.150.1940.202
L9
L4
F
G
D
H210.0010.400.3930.409
L216.40 typ.0.645 typ.
L413.0014.000.5110.551
M
E
L52.652.950.1040.116
L615.2515.750.6000.620
L76.206.600.2440.259
L93.503.930.1370.154
M2.6 typ.0.102 typ.
Diam. I3.753.850.1470.151
6/9
Page 7
STTH806Package mechanical data
Table 7.TO-220AC Ins Dimensions
Dimensions
Ref.
MillimetersInches
Min.Typ. Max. Min.Typ. Max.
A15.2015.90 0.5980.625
a13.750.147
B
Ø I
L
A
I4
C
b2
a213.0014.00 0.5110.551
B10.0010.40 0.3930.409
F
b10.610.88 0.0240.034
b21.231.32 0.0480.051
C4.404.60 0.1730.181
a1
l2
a2
c2
c10.490.70 0.0190.027
c22.402.72 0.0940.107
e4.805.40 0.1890.212
M
b1
e
c1
F6.206.60 0.2440.259
ØI3.753.85 0.1470.151
I415.80 16.40 16.80 0.622 0.646 0.661
L2.652.95 0.1040.116
l21.141.70 0.0440.066
M2.600.102
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Page 8
Ordering informationSTTH806
3 Ordering information
Part NumberMarkingPackageWeightBase qty
2
STTH806GSTTH806GD
STTH806G-TRSTTH806GD
PAK1.48 g50Tube
2
PAK1.48 g1000Tape and reel
Delivery
mode
STTH806DSTTH806DTO-220AC1.90 g50Tube
STTH806DIRGSTTH806DITO-220AC Ins2.30 g50Tube
4 Revision history
DateRevisionDescription of Changes
18-May-20061First issue.
10-Aug-20062Changed part number STTH806DI to STTH806DIRG.
8/9
Page 9
STTH806
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.