The STTH802 uses ST's new 200 V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, DPAK,
2
and D
voltage, high frequency inverters, free wheeling
and polarity protection.
PAK this device is intended for use in low
K
TO-220AC
STTH802D
K
A
A
K
NC
DPAK
STTH802B
K
A
K
TO-220FPAC
STTH802FP
K
A
A
NC
2
DPAK
STTH802G
Order codes
Part NumberMarking
STTH802DSTTH802
STTH802FPSTTH802
STTH802BSTTH802
STTH802B-TRSTTH802
STTH802GSTTH802
STTH802G-TRSTTH802
September 2006 Rev 21/11
www.st.com
Page 2
CharacteristicsSTTH802
1 Characteristics
Table 1.Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage200V
RMS forward current16A
Average
forward
current, δ = 0.5
TO-220A, DPAK, D
TO-220FPAC
2
PA K
= 145° C
T
c
T
= 125° C
c
8A
Surge non
I
FSM
repetitive
tp = 10 ms Sinusoidal100A
forward current
T
stg
T
j
Table 2.Thermal parameters
Storage temperature range-65 to + 175° C
Maximum operating junction temperature175° C
SymbolParameterValueUnit
2
PA K3 .2
R
th(j-c)
Table 3.Static electrical characteristics
Junction to case
TO-220AC, DPAK, D
TO-220FPAC5.5
° C/W
SymbolParameterTest conditionsMin.TypMax.Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C660
T
j
T
= 25° C
j
= 150° C0.80.90
T
j
V
R
= 8 A
I
F
= V
RRM
0.951.05
6
T
To evaluate the conduction losses use the following equation:
P = 0.73 x I
F(AV)
+ 0.021 I
F2(RMS)
µA
V
2/11
Page 3
STTH802Characteristics
Table 4.Dynamic characteristics
SymbolParameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
VR = 30 V, Tj = 25 °C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
= 8 A, dIF/dt = -200 A/µs,
I
F
VR = 160 V, Tj = 125 °C
I
= 8 A, dIF/dt = 50 A/µs
F
VFR = 1.1 x V
, Tj = 25 °C
Fmax
IF = 8 A, dIF/dt = 50 A/µs,
= 25 °C
T
j
Min.TypMax.Unit
2530ns
1722
5.57A
150ns
1.5V
Figure 1.Peak current versus duty cycleFigure 2.Forward voltage drop versus
forward current (typical values)
IM(A)
100
80
60
40
20
0
P = 5WP = 5 W
P = 2WP = 2 W
P = 1WP = 1 W
0.00.10.20.30.40.50.60.70.80.91.0
T
T
I
I
M
M
=tp/T
=tp/T
d
δ
tp
tp
δ
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.00.51.01.52.02.53.0
Tj=150°C
Tj=25°C
VFM(V)
Figure 3.Forward voltage drop versus
forward current (maximum values)
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.00.51.01.52.02.53.0
Tj=150°C
Tj=25°C
VFM(V)
Figure 4.Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC,
DPAK, D
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AC
DPAK
2
DPAK
0.1
1.E-031.E-021.E-011.E+00
3/11
2
PAK)
tp(s)
Page 4
CharacteristicsSTTH802
Figure 5.Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
TO-220FPAC
0.1
0.0
1.E-031.E-021.E-011.E+001.E+01
tp(s)
Figure 7.Reverse recovery charges versus
dI
/dt (typical values)
F
QRR(nC)
160
IF=8A
=160V
V
140
R
120
100
80
60
40
20
0
101001000
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
Figure 6.Junction capacitanceversus
reverse applied voltage (typical
values)
C(pF)
100
10
1101001000
V
F=1MHz
=30mV
osc
Tj=25°C
RMS
VR(V)
Figure 8.Reverse recovery time versus dI
(typical values)
tRR(ns)
80
70
60
50
40
30
20
10
0
101001000
Tj=125°C
Tj=25°C
IF=8A
V
=160V
R
dIF/dt(A/µs)
F
/dt
Figure 9.Peak reverse recovery current
versus dI
IRM(A)
12
IF=8A
V
=160V
R
10
8
6
4
2
0
101001000
/dt (typical values)
F
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
Figure 10. Dynamic parameters versus
junction temperature
QRR;IRM[Tj]/QRR;IRM[Tj=125°C]
1.4
IF=8A
V
=160V
R
1.2
1.0
I
0.8
0.6
0.4
0.2
0.0
255075100125150
RM
Q
RR
Tj(°C)
4/11
Page 5
STTH802Ordering information scheme
Figure 11. Thermal resistance, junction to
Figure 12. Thermal resistance, junction to
ambient, versus copper surface
under tab - Epoxy printed circuit
board FR4, e
R
(°C/W)
th(j-a)
100
90
80
70
60
50
40
30
20
10
0
0510152025303540
= 35 µm (D2PAK )
CU
SCU(cm²)
2
DPAK
R
th(j-a)
100
90
80
70
60
50
40
30
20
10
0
0510152025303540
2 Ordering information scheme
ambient, versus copper surface
under tab - Epoxy printed circuit
board FR4, e
(°C/W)
= 35 µm (DPAK)
CU
SCU(cm²)
DPAK
Ultrafast switching diode
Average forward current
8 = 8 A
Repetitive peak reverse voltage
02 = 200 V
Package
D = TO-220AC in Tube
FP = TO-220FPAC in Tube
B = DPAK in Tube
B-TR = DPAK in Tape and reel
2
G = D PAK in Tube
G-TR = D PAK in Tape and reel
2
STTH 8 02 XXX
5/11
Page 6
Package informationSTTH802
3 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 Nm
Maximum torque value: 1.0 Nm
Table 5.T0-220AC dimensions
DIMENSIONS
REF.
MillimetersInches
Min.Max.Min.Max.
A4.404.600.1730.181
H2
Ø I
L5
L6
L2
F1
F
L9
L4
G
A
C
L7
C1.231.320.0480.051
D2.402.720.0940.107
E0.490.700.0190.027
F0.610.880.0240.034
F11.141.700.0440.066
D
G4.955.150.1940.202
H210.0010.400.3930.409
L216.40 typ.0.645 typ.
M
E
L413.0014.000.5110.551
L52.652.950.1040.116
L615.2515.750.6000.620
L76.206.600.2440.259
L93.503.930.1370.154
M2.6 typ.0.102 typ.
Diam. I3.753.850.1470.151
6/11
Page 7
STTH802Package information
Table 6.T0-220FPAC dimensions
DIMENSIONS
REF
MillimetersInches
Min.Max.Min.Max.
A4.44.60.1730.181
A
H
B
B2.52.70.0980.106
D2.52.750.0980.108
Dia
L6
L2
L3
L5
F1
L4
F
G1
G
D
L7
E
E0.450.700.0180.027
F0.7510.0300.039
F11.151.700.0450.067
G4.955.200.1950.205
G12.42.70.0940.106
H1010.40.3930.409
L216 Typ.0.63 Typ.
L328.630.61.1261.205
L49.810.60.3860.417
L52.93.60.1140.142
L615.916.40.6260.646
L79.009.300.3540.366
Dia.3.003.200.1180.126
7/11
Page 8
Package informationSTTH802
Table 7.DPAK dimensions
DIMENSIONS
REF
E
B2
L2
H
L4
B
G
R
A1
C2
A
A10.901.100.0350.043
A20.030.230.0010.009
B25.205.400.2040.212
D
C20.480.600.0180.023
R
C
G4.404.600.1730.181
0.60 MIN.
A2
L20.80 typ.0.031 typ.
V2
L40.601.000.0230.039
V20°8°0°8°
MillimetersInches
.
Min.MaxMin.Max.
A2.202.400.0860.094
B0.640.900.0250.035
C0.450.600.0170.023
D6.006.200.2360.244
E6.406.600.2510.259
H9.3510.100.3680.397
Figure 13. DPAK footprint (dimensions in mm)
6.733
6.7
1.6
2.3
2.3
1.6
8/11
Page 9
STTH802Package information
m
D
Table 8.D
L2
L
L3
2
PAK dimensions
E
A1
B2
B
G
* FLAT ZONE NO LESS THAN 2m
Dimensions
Ref.
MillimetersInches
Min.Max.Min.Max.
A4.404.600.1730.181
A
C2
A12.492.690.0980.106
A20.030.230.0010.009
B0.700.930.0270.037
B21.141.700.0450.067
C0.450.600.0170.024
C21.231.360.0480.054
C
R
D8.959.350.3520.368
E10.0010.400.3930.409
A2
G4.885.280.1920.208
L15.0015.850.5900.624
M
*
V2
L21.271.400.0500.055
L31.401.750.0550.069
M2.403.200.0940.126
R0.40 typ.0.016 typ.
V20°8°0°8°
Figure 14. D2PAK footprint (dimensions in mm)
16.90
10.30
8.90
3.70
5.08
1.30
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
9/11
Page 10
Ordering informationSTTH802
4 Ordering information
Part NumberMarkingPackageWeightBase qtyDelivery mode
STTH802DSTTH802TO-220AC1.86 g50Tube
STTH802FPSTTH802TO-220FPAC2.2 g50Tube
STTH802BSTTH802DPAK0.3 g75Tube
STTH802B-TRSTTH802DPAK0.3 g2500Tape and reel
2
STTH802GSTTH802D
STTH802G-TRSTTH802D
PAK1.48 g50Tube
2
PAK1.48 g1000Tape and reel
5 Revision history
DateRevisionDescription of Changes
03-May-20061First issue
22-Sep-20062Added D2PAK package
10/11
Page 11
STTH802
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