Datasheet STTH6110TV Datasheet (ST)

STTH6110TV

Ultrafast recovery - high voltage diode

Main product characteristics

I

F(AV)

V

RRM

T

j

V

(typ) 1.3 V

F

(typ) 42 ns

t

rr

2 x 30 A

1000 V

150° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated package

– Electrical insulation = 2500 V

RMS

Capacitance = 45 pF

Description

A1

A2

K1

K2

A1

K1

A2

K1

K2

ISOTOP

STTH6110TV1

STTH6110TV2

Order codes

Part Number Marking

STTH6110TV1 STTH6110TV1

A1

K2

K1 A2

A1

A2

ISOTOP

K2

The compromise-free, high quality design of this

STTH6110TV2 STTH6110TV2

diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.

These demanding applications include industrial
power supplies, motor control, and similar
industrial systems that require rectification and
freewheeling. These diodes also fit into auxiliary
functions such as snubber, bootstrap, and
demagnetization applications.

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate advantage for reducing
maintenance of the equipment

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH6110TV

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 1000 V

RMS forward current 60 A

Average forward current, δ = 0.5 Per diode Tc = 60° C 30 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 350 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 240 A

Storage temperature range -65 to + 150 °C

stg

T

Maximum operating junction temperature 150 °C

j

Symbol Parameter Value Unit

Per diode 1.4

R

R

th(j-c)

th(c)

Junction to case

° C/WTotal 0.75

Coupling thermal resistance 0.1

When the diodes are used simultaneously:
∆T

j(diode1)

Table 3. Static electrical characteristics

= P

(diode1)

x R

(per diode) + P

th(j-c)

(diode2)

x R

th(c)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 10 100

T

j

T

= 25° C

j

T

= 150° C 1.3 1.7

j

= V

V

R

= 30 A

I

F

RRM

15

2.0

T

To evaluate the conduction losses use the following equation:
P = 1.3 x I

F(AV)

+ 0.013 I

F2(RMS)

µA

VTj = 100° C 1.4 1.8

2/8

STTH6110TV Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

=0.05

=0.1

I (A)

F(AV)

=0.2

=0.5

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

IF = 1 A, dIF/dt = -200 A/µs,

= 30 V, Tj = 25° C

V

R

IF = 30 A, dIF/dt = -200 A/µs,
V

= 600 V, Tj = 125° C

R

= 30 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 30 A dIF/dt = 100 A/µs

I

F

= 1.5 x V

V

FR

I

= 30 A, dIF/dt = 100 A/µs,

F

, Tj = 25° C

Fmax

Tj = 25° C

Figure 2. Forward voltage drop versus

I (A)

FM

=1

T

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

100

53 70

ns

42 55

24 32 A

1

450 ns

5V

Tj=25°C

(Maximum values)

V (V)

FM

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

60

VR=600V

=125°C

T

j

50

40

30

20

10

0

0 50 100 150 200 250 300 350 400 450 500

3/8

IF=0.5 x I

/dt (typical values)

F

IF= I

F(AV)

F(AV)

dI /dt(A/µs)

F

IF= 2 x I

F(AV)

Characteristics STTH6110TV

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

t (ns)

rr

700

600

IF= 2 x I

F(AV)

VR=600V
T

=125°C

j

500

400

IF=I

)

F(AV

300

200

100

dI /dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

F

IF=0.5 x I

F(AV)

Figure 7. Softness factor versus

dI

/dt (typical values)

F

S factor

1.50

IF= 2 x I

F(AV)

VR=600V

=125°C

T

j

1.25

1.00

0.75

dI /dt(A/µs)

0.50
0 50 100 150 200 250 300 350 400 450 500

F

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (µC)

rr

8

VR=600V

7

T

=125°C

j

IF= 2 x I

F(AV)

6

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

IF= I

F(AV)

IF=0.5 x I

F(AV)

Figure 8. Relative variations of dynamic

parameters versus junction
temperature

2.0

1.8

1.6

S

factor

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
25 50 75 100 125

I

RM

t

Q

RR

RR

T (°C)

j

IF= I

VR=600V

Reference: T

F(AV)

=125°C

j

4/8

STTH6110TV Characteristics

Figure 9. Transient peak forward voltage

versus dI

V (V)

FP

25

IF= I

F(AV)

Tj=125°C

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 11. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

1000

100

V

osc

F=1MHz

=30mV

Tj=25°C

RMS

Figure 10. Forward recovery time versus

dIF/dt (typical values)

t (ns)

fr

1100

1000

900

800

700

600

500

400

300

200

0 100 200 300 400 500

dI /dt(A/µs)

F

IF= I

F(AV)

VFR= 1.5 x VFmax.

T

=125°C

j

V (V)

10

1 10 100 1000

R

5/8

Package information STTH6110TV

2 Package information

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Table 5. ISOTOP dimensions

DIMENSIONS

REF.

E

G2

A

A1

E2

F1 F

C

C2

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

Millimeters Inches

Min. Max Min. Max.

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

P1

E 25.15 25.50 0.990 1.004

E1 23.85 24.15 0.939 0.951

D1

S

D

B

G

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

ØP

G1

E1

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

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S 30.10 30.30 1.185 1.193

STTH6110TV Ordering information

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH6110TV1 STTH6110TV1 ISOTOP 27 g 10 Tube

STTH6110TV2 STTH6110TV2 ISOTOP 27 g 10 Tube

4 Revision history

Date Revision Description of Changes

22-Feb-2006 1 First issue.

7/8

STTH6110TV

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