The STTH60W03C uses ST Turbo 2 300 V
technology. It is especially suited to be used for
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST's TO-247, this device offers high power
integration for all welding machines and industrial
applications.
A1
TO-247
STTH60W03CW
Table 1.Device summary
SymbolValue
I
F(AV)
V
RRM
(typ)25 ns
t
rr
T
j
V
(typ)0.94 V
F
A2
K
2 x 30 A
300 V
175 °C
June 2012Doc ID 023144 Rev 11/8
This is information on a product in full production.
www.st.com
8
Page 2
CharacteristicsSTTH60W03C
1 Characteristics
Table 2.Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
SymbolParameterValueUnit
V
I
F(RMS)
I
F(AV)
I
FSM
T
Table 3.Thermal resistance
SymbolParameterValueUnit
Repetitive peak reverse voltage300V
RRM
RMS forward current50A
= 110 °CPer diode 30
T
Average forward current, δ = 0.5
c
T
= 95 °CPer device60
c
Surge non repetitive forward currenttp = 10 ms sinusoidal 280A
Storage temperature range-65 to + 175° C
stg
Maximum operating junction temperature+ 175° C
T
j
A
R
R
Junction to case
th(j-c)
Coupling0.3°C / W
th(c)
Total
0.9°C / W
When diodes 1 and 2 are used simultaneously:
Per diode 1.5°C / W
Tj
(diode 1)
Table 4.Static electrical characteristics
SymbolParameterTest conditionsMin.TypMax.Unit
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
IR
= P
(diode 1)
(1)
Reverse leakage current
(2)
Forward voltage drop
F
x R
(Per diode) + P
th(j-c)
VR = V
= 30 A
I
F
= 60 A
I
F
x Rth(c)
RRM
(diode 2)
T
= 25 °C
j
= 125° C20200
T
j
= 25° C
T
j
T
= 150 °C0.941.15
j
= 25° C
T
j
T
= 150° C1.181.45
j
20
1.45
1.7
To evaluate the conduction losses use the following equation:
P = 0.85 x I
F(AV)
+ 0.01 I
F2(RMS)
µA
V
2/8Doc ID 023144 Rev 1
Page 3
STTH60W03CCharacteristics
Table 5.Dynamic electrical characteristics
SymbolParameterTest conditionsMin.TypMax.Unit
Q
S
I
RM
factor
t
V
Reverse recovery current
Reverse recovery charge180nC
RR
= 125 °C
T
j
Softness factor0.3
Reverse recovery timeTj = 25 °C
rr
t
Forward recovery time
fr
Forward recovery voltage2.03.0V
FP
Tj = 25 °C
Figure 1.Average forward power dissipation
versus average forward current
IF = 30 A, VR = 200 V
dIF/dt = -200 A/µs
IF = 1 A, VR = 30 V
dIF/dt = -100 A/µs
IF = 30 A, VFR = 1.5 V
/dt = 200 A/µs
dI
F
Figure 2.Forward voltage drop versus
forward current (per diode)
79 A
2535ns
180ns
(per diode)
I
P
(W)
F(AV)
50
45
40
35
30
25
20
15
10
5
0
0510152025303540
δ05= 0.
δ1= 0.
δ = 0.2
T
= tp/T
δ
δ = 0.5
tp
Figure 3.Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-041.E-031.E-021.E-011.E+00
δ = 1
I
tp(s)
F(AV)
1000.0
(A)
Figure 4.Peak reverse recovery current
16
14
12
10
8
6
4
2
0
(A)
FM
= 150°C
T
j
100.0
(Typical values)
10.0
1.0
0.1
0.00.51.01.52.02.53.0
Tj= 150°C
versus dI
(Maximum values)
F
T
°C
= 25
j
(Maximum values)
VFM(V)
/dt (typical values, per
diode)
IRM(A)
I
= I
F F(AV)
V = 200 V
R
T = 125 °C
j
dIF/dt(A/µs)
050100150200250300350400450500
Doc ID 023144 Rev 13/8
Page 4
CharacteristicsSTTH60W03C
Figure 5.Reverse recovery time versus dIF/dt
(typical values, per diode)
trr(ns)
100
I= I
90
80
70
60
50
40
30
20
10
0
050100150 200 250 300350 400450 500
F F(AV)
V = 200 V
R
T = 125 °C
j
dIF/dt(A/µs)
Figure 7.Relative variations of dynamic
parameters versus junction
temperature
2.5
S
FACTOR
2.0
1.5
1.0
I
RM
0.5
Q
RR
0.0
255075100125
IF= I
VR= 200 V
Reference:T
F(AV)
=125 °C
j
T
(°C)
j
Figure 6.Reverse recovery charges versus
dI
/dt (typical values, per diode)
F
QRR(nC)
350
I= I
F F(AV)
300
V = 200 V
R
T = 125 °C
250
200
150
100
j
50
0
050100 150200 250 300350 400450 500
dIF/dt(A/µs)
Figure 8.Reverse recovery softness factor
versus dI
/dt (typical values, per
F
diode)
S factor
0.8
I= I
FF(AV)
0.7
V = 200V
R
T = 125 °C
j
0.6
0.5
0.4
0.3
0.2
0.1
0.0
050100 150 200250 300 350 400450 500
dIF/dt(A/µs)
4/8Doc ID 023144 Rev 1
Page 5
STTH60W03CCharacteristics
Figure 9.Forward recovery time versus dIF/dt
(typical values, per diode)
Figure 10. Transient peak forward voltage
versus dI
/dt (typical values, per
F
diode)
tfr(ns)
180
160
140
120
100
80
60
40
20
0
150200250300350400450500
I= I
FF(AV)
V = 1.5 V
FR
T = 125 °C
j
dIF/dt(A/µs)
VFP(V)
5
IF=I
F(AV)
Tj=125 °C
4
3
2
1
0
100150200250300350400450500
dIF/dt(A/µs)
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
Table 6.TO-247 dimensions
®
packages, depending on their level of environmental compliance. ECOPACK®
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