Datasheet STTH60L06TV Datasheet (ST)

Main product characteristics

STTH60L06TV

Turbo 2 ultrafast high voltage rectifier

I

F(AV)

V

RRM

T

j

(typ) 1.30 V

V

F

(typ) 50 ns

t

rr

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching & conduction losses

■ Insulated package:

Electrical insulation = 2500 V

2 x 40 A

600 V

150° C

RMS

A1A2K1

K2

STTH60L06TV1

A1

K1

A2

K2

ISOTOP

A1

K2

A2K1

STTH60L06TV2

A1

K1

A2

Capacitance = 45 pF

Description

The STTH60L06TV, which is using ST Turbo 2
600V technology, is specially suited for use in
switching power supplies, and industrial
applications (such as welding), as rectification

Order codes

Part Number Marking

STTH60L06TV1 STTH60L06TV1

STTH60L06TV2 STTH60L06TV2

diode.

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

K2

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

October 2006 Rev 3 1/7

Repetitive peak reverse voltage 600 V

RMS forward current 100 A

Average forward current, δ = 0.5

Surge non repetitive forward current tp = 10 ms Sinusoidal 210 A

Storage temperature range -55 to + 150 ° C

stg

Maximum operating junction temperature 150 ° C

T

j

Tc = 75° C per diode 30 A

= 70° C per diode 40

T

c

www.st.com

Characteristics STTH60L06TV

1 Characteristics

Table 2. Thermal parameters

Symbol Parameter Value Unit

Per diode 1.60

R

R

th(j-c)

th(c)

Junction to case

°C/WTotal 0.85

Coupling thermal resistance 0.1

When the diodes are used simultaneously:
∆T

j(diode1)

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= P

(diode1)

x R

(per diode) + P

th(j-c)

T

= 25° C

j

= 125° C 25 250

T

j

T

= 25° C

j

= 150° C 1.0 1.25

T

j

(diode2)

= V

V

R

= 60 A

I

F

x R

RRM

th(c)

25

1.55

To evaluate the conduction losses use the following equation:
P = 0.95 x I

Table 4. Dynamic characteristics (per diode)

Symbol Parameter

F(AV)

+ 0.010 I

F2(RMS)

Test conditions

Min. Typ Max. Unit

µA

V

I

= 0.5 A, Irr = 0.25 A

F

IR = 1 A, Tj = 25° C

Reverse recovery time

t

rr

I

V

Reverse recovery current

RM

t

Forward recovery time

fr

Forward recovery voltage

FP

= 1 A, dIF/dt = 50 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 30 A, dIF/dt = 100 A/µs,

I

F

VR = 400 V, Tj = 125° C

I

= 30 A dIF/dt = 100 A/µs

F

V

= 1.1 x V

FR

= 30 A, dIF/dt = 100 A/µs,

I

F

= 1.1 x V

V

FR

2/7

, Tj = 25° C

Fmax

, Tj = 25° C

Fmax

65

ns

65 90

11.5 16 A

500 ns

2.5 V

STTH60L06TV Characteristics

Figure 1. Conduction losses versus

average current (per diode)

P(W)

80

70

60

50

40

30

20

10

0

0 1020304050

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

δ

=tp/T

T

tp

Figure 5. Reverse recovery time versus

dI

/dt (typical values, per diode)

F

t (ns)

rr

800

700

600

500

400

300

200

100

0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

F F(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

I =0.5 x I

F F(AV)

V =400V

R

T=125°C

j

Figure 2. Forward voltage drop versus

forward current (per diode)

I (A)

FM

100

90

80

70

60

50

40

30

20

10

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

T=150°C

j

(typical values)

T=150°C

j

(maximum values)

V (V)

FM

T=25°C

j

(maximum values)

Figure 4. Peak reverse recovery current

versus dI

/dt (typical values, per

F

diode)

I (A)

RM

45

V =400V

R

T=125°C

j

40

35

I =0.5 x I

30

25

20

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

F F(AV)

dI /dt(A/µs)

F

I=I

F F(AV)

I =2 x I

F F(AV)

Figure 6. Reverse recovery charges versus

dIF/dt (typical values, per diode)

Q (nC)

rr

3500

V =400V

R

T=125°C

j

3000

2500

2000

1500

1000

500

0

0 100 200 300 400 500

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

3/7

Characteristics STTH60L06TV

Figure 7. Reverse recovery softness factor

versus dI

/dt (typical values, per

F

diode)

S factor

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

I < 2 x I

F F(AV)

V =400V

R

T=125°C

j

Figure 9. Transient peak forward voltage

versus dI

/dt (typical values, per

F

diode)

V (V)

FP

10

I=I

F F(AV)

9

T=125°C

j

8

7

6

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Figure 8. Relative variations of dynamic

parameters versus junction
temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125

Q

RR

t

rr

S factor

I=I

F F(AV)

V =400V

R

Reference:T =125°C

I

RM

T (°C)

j

j

Figure 10. Forward recovery time versus dI

(typical values, per diode)

t (ns)

fr

450

400

350

300

250

200

150

100

50

0

0 100 200 300 400 500

dI /dt(A/µs)

F

I=I

F F(AV)

V =1.1 x V max.

FR F

T=125°C

j

F

/dt

Figure 11. Junction capacitance versus

reverse voltage applied (typical
values, per diode)

C(pF)

1000

100

V (V)

10

1 10 100 1000

R

4/7

F=1MHz

V =30mV

OSC RMS

T=25°C

j

STTH60L06TV Package mechanical data

2 Package mechanical data

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Table 5. ISOTOP dimensions

DIMENSIONS

REF.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004

E1 23.85 24.15 0.939 0.951

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

Millimeters Inches

Min. Max Min. Max.

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

5/7

Ordering information STTH60L06TV

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH60L06TV1 STTH60L06TV1 ISOTOP

STTH60L06TV2 STTH60L06TV2 ISOTOP

4 Revision history

Date Revision Description of Changes

07-Sep-2004 1 First issue

10-Sep-2004 2

13-Oct-2006 3

27 g

(without screws)10(with screws)

27 g

(without screws)10(with screws)

Average forward current (page 1) and Junction to case
(page 2) values changed

Reformatted to current standard. Added part number
STTH60L06TV2.

Tube

Tube

6/7

STTH60L06TV

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