Page 1
Mian product characteristics
I
F(AV)
V
RRM
T
(max) 175° C
j
V
(typ) 0.83 V
F
(max) 50 ns
t
rr
60 A
400 V
Features and benefits
STTH60L04W
Ultrafast high voltage rectifier
A
K
● Ultrafast switching
● Low reverse current
● Low thermal resistance
● Reduces switching and conduction losses
DO-247
STTH60L04W
Description
The STTH60L04W uses ST 400 V technology
and is specially suited for use in switching power
supplies, welding equipment, and industrial
applications, as an output rectification diode.
Table 1. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
Repetitive peak reverse voltage 400 V
RMS forward current 90 A
Average forward current Tc = 90° C δ = 0.5 Per diode 60 A
Surge non repetitive forward current tp = 10 ms sinusoidal 600 A
Storage temperature range -55 to + 175 ° C
stg
T
Maximum operating junction temperature 175 ° C
j
Order codes
Part number Marking
STTH60L04W STTH60L04
October 2006 Rev 1 1/7
www.st.com
7
Page 2
Characteristics STTH60L04W
1 Characteristics
Table 2. Thermal resistance
Symbol Parameter Value (max). Unit
th(j-c)
Junction to
case
0.70 °C/W
R
Table 3. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
F
= 25° C
T
j
= 150° C 100 1000
T
j
= 25° C
T
j
= 150° C 0.83 1.0
T
j
= V
V
R
I
= 60 A
F
RRM
50
µA
1.2
V
To evaluate the conduction losses use the following equation:
P = 0.8 x I
Table 4. Dynamic characteristics (per diode)
Symbol Parameter Test conditions Min Typ Max Unit
t
rr
I
RM
S
factor
t
fr
V
FP
+ 0.0033 I
F(AV)
Reverse recovery
time
Reverse recovery
current
F2(RMS)
= 25° C
T
j
= 125° C
T
j
Softness factor Tj = 125° C
Forward recovery
time
Forward recovery
voltage
T
= 25° C
j
= 25° C
T
j
= 1 A dIF/dt = 50 A/µs
I
F
= 30 V
V
R
= 1 A dIF/dt = 200 A/µs
I
F
V
= 30 V
R
= 60 A VR = 200 V
I
F
/dt = 100 A/µs
dI
F
= 60 A VR = 200 V
I
F
/dt = 100 A/µs
dI
F
= 60 A dIF/dt = 200 A/µs
I
F
V
= 1.1 x V
FR
= 60 A dIF/dt = 200 A/µs
I
F
= 1.1 x V
V
FR
Fmax
Fmax
66 90
36 50
15 A
0.4
600 ns
3.2 V
ns
2/7
Page 3
STTH60L04W Characteristics
(A)
Figure 1. Conduction losses versus
average forward current (per diode)
P(W)
80
70
60
50
40
30
20
10
0
0 1020304050 607080
d=0.05
d=0.1
I
F(AV)
d=0.2
d=0.5
T
(A)
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
/R
Z
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
th(j-c)
Single pulse
tP(s)
Figure 2. Forward voltage drop versus
forward current (per diode)
I
FM
d=1
200
180
160
140
120
100
80
60
40
20
0
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TJ=150°C
(Maximum values)
TJ=150°C
(Typical values)
TJ=25°C
(Maximum values)
Figure 4. Peak reverse recovery current
versus dI
/dt (typical values, per
F
diode)
I
(A)
RM
45
IF=I
F(AV)
40
VR=200V
T
=125°C
j
35
30
25
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Figure 5. Reverse recovery time versus
dI
/dt (typical values, per diode)
F
t(ns)
rr
300
250
200
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=I
F(AV)
VR=200V
T
=125°C
j
Figure 6. Reverse recovery charges versus
dIF/dt (typical values, per diode)
Q(nC)
rr
3000
IF=I
F(AV)
VR=200V
2500
=125°C
T
j
2000
1500
1000
500
0
0 100 200 300 400 500
3/7
dIF/dt(A/µs)
Page 4
Characteristics STTH60L04W
Figure 7. Reverse recovery softness factor
versus dI
/dt (typical values, per
F
diode)
S
FACTOR
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF< 2 x I
VR=200V
T
=125°C
j
F(AV)
Figure 9. Transient peak forward voltage
versus dI
/dt (typical values, per
F
diode)
(V)
V
FP
8
IF=I
F(AV)
Tj=125°C
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
1.6
S
1.4
1.2
1.0
0.8
IRM&t
0.6
0.4
0.2
0.0
RR
Q
RR
25 50 75 100 125
FACTOR
Tj(°C)
IF=I
VR=200V
Reference: T
F(AV)
=125°C
j
Figure 10. Forward recovery time versus dI
(typical values, per diode)
t
(ns)
fr
1000
900
800
700
600
500
400
300
200
100
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=I
F(AV)
VFR=1.1 x VFmax.
T
=125°C
j
F
/dt
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
1000
VR(V)
100
1 10 100 1000
4/7
V
F=1MHz
OSC
Tj=25°C
=30mV
RMS
Page 5
STTH60L04W Package information
2 Package information
● Epoxy meets UL94, V0
● Cooling method: by conduction (C)
● Recommended torque value: 0.8 Nm
● Maximum torque value: 1.0 Nm
Table 5. DO-247 Dimensions
Dimensions
Ref.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
V
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
V
Dia
F 1.00 1.40 0.039 0.055
F2 2.00 0.078
H
A
F3 2.00 2.40 0.078 0.094
G 10.90 0.429
L5
H 15.45 15.75 0.608 0.620
L
L2
L4
F2
L1
L3
V2
G
F3
F
D
ME
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
5/7
Page 6
Ordering information STTH60L04W
3 Ordering information
Ordering type Marking Package Weight Base qty Delivery mode
STTH60L04W STTH60L04W DO-247 4.4 g 30 Tube
4 Revision history
Date Revision Description of Changes
26-Oct-2006 1 First issue
6/7
Page 7
STTH60L04W
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