Automotive ultrafast recovery - high voltage diode
■ AEC-Q101 qualified
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ ECOPACK
®
2 compliant component
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability like automotive applications.
These diodes also fit into auxiliary functions such
as snubber, bootstrap, and demagnetization
applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
K
DO-247
STTH6010WY
Table 1.Device summary
I
F(AV)
V
RRM
T
j
(typ)1.3 V
V
F
(typ)49 ns
t
rr
KA
A
60 A
1000 V
175 °C
November 2011Doc ID 018924 Rev 11/8
www.st.com
8
Page 2
CharacteristicsDevice name or AN #
1 Characteristics
Table 2.Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Surge non repetitive forward current tp = 10 ms sinusoidal400A
Storage temperature range-65 to +175°C
stg
Operating junction temperature range-40 to +175°C
T
j
SymbolParameterValueUnit
R
th(j-c)
Table 4.Static electrical characteristics
Junction to case0.78°C/W
SymbolParameterTest conditionsMin.TypMax.Unit
T
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25 °C
j
= 125 °C20200
T
j
T
= 25 °C
j
T
= 150 °C1.31.7
j
= V
V
R
= 60 A
I
F
RRM
20
2.0
µA
VTj = 100 °C1.41.8
To evaluate the conduction losses use the following equation:
P = 1.3 x I
2/8Doc ID 018924 Rev 1
+ 0.0067 I
F(AV)
F2(RMS)
Page 3
Device name or AN #Characteristics
Table 5.Dynamic characteristics
SymbolParameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
SSoftness factor
t
Forward recovery time
fr
V
Forward recovery voltage
FP
Figure 1.Conduction losses versus
average current
P(W)
140
120
100
80
60
40
20
0
0 1020304050607080
=0.05
=0.1
=0.2
I(A)
F(AV)
=0.5
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
= 30 V, Tj = 25 °C
V
R
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
I
= 1 A, dIF/dt = -200 A/µs,
F
VR = 30 V, Tj = 25 °C
= 60 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125 °C
V
R
= 60 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125 °C
V
R
I
= 60 A dIF/dt = 100 A/µs
F
VFR = 1.5 x V
, Tj = 25 °C
Fmax
IF = 60 A, dIF/dt = 100 A/µs,
= 25 °C
T
j
Figure 2.Forward voltage drop versus
I (A)
FM
=1
T
200
180
160
140
120
100
80
60
40
20
0
0.00.51.01.52.02.53.03.5
Min.TypMax.Unit
forward current
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
115
6180
ns
4965
3140A
1
750ns
4V
Tj=25°C
(Maximum values)
V (V)
FM
Figure 3.Relative variation of thermal
impedance junction to case
versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-031.E-021.E-011.E+00
t (s)
p
Figure 4.Peak reverse recovery current
versus dI
I (A)
RM
70
VR=600V
T
=125°C
j
60
50
40
30
20
10
Doc ID 018924 Rev 13/8
IF=0.5 x I
F(AV)
0
050100 150200250300350400450500
/dt (typical values)
F
IF= 2 x I
IF= I
F(AV)
dI /dt(A/µs)
F
F(AV)
Page 4
CharacteristicsDevice name or AN #
Figure 5.Reverse recovery time versus
dI
/dt (typical values)
F
t (ns)
rr
700
600
IF= 2 x I
F(AV)
dI /dt(A/µs)
F
IF=I
)
F(AV
500
400
300
200
100
0
050100150200250 300350400450500
IF=0.5 x I
VR=600V
T
=125°C
j
F(AV)
Figure 7.Softness factor versus
dI
/dt (typical values)
F
S factor
1.50
IF= 2 x I
F(AV)
VR=600V
=125°C
T
1.25
1.00
0.75
0.50
j
dI /dt(A/µs)
F
050100 150200250300 350400450500
Figure 6.Reverse recovery charges versus
dIF/dt (typical values)
Q (µC)
rr
10
VR=600V
9
T
=125°C
j
8
7
6
5
4
3
2
1
0
050100 150200250300350400450500
IF= 2 x I
F(AV)
dI /dt(A/µs)
F
IF= I
F(AV)
IF=0.5 x I
F(AV)
Figure 8.Relative variations of dynamic
parameters versus junction
temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
255075100125
S
factor
I
RM
t
Q
RR
RR
T (°C)
j
IF= I
VR=600V
Reference: T
F(AV)
=125°C
j
4/8Doc ID 018924 Rev 1
Page 5
Device name or AN #Characteristics
FP
IF= I
Tj=125°C
versus dI
F(AV)
/dt (typical values)
F
dI /dt(A/µs)
F
Figure 10.Forward recovery time versus dI
(typical values)
t (ns)
fr
1200
1000
800
600
400
dI /dt(A/µs)
200
0100200300400500
F
Figure 9.Transient peak forward voltage
V (V)
20
18
16
14
12
10
8
6
4
2
0
0100200300400500
Figure 11. Junction capacitance versus reverse voltage applied (typical values)
C(pF)
1000
100
V
F=1MHz
=30mV
osc
Tj=25°C
RMS
IF= I
F(AV)
VFR= 1.5 x VFmax.
=125°C
T
j
F
/dt
V (V)
10
1101001000
R
Doc ID 018924 Rev 15/8
Page 6
Package informationDevice name or AN #
2 Package information
●Epoxy meets UL94, V0
●Cooling method: by conduction (C)
●Recommended torque value: 0.80 N·m
●Maximum torque value: 1.0 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Table 6.DO-247 dimensions
Dimensions
Ref.
A4.855.15 0.1910.203
V
D2.202.60 0.0860.102
E0.400.80 0.0150.031
V
H
L5
L
L3
V2
F
G
Dia
A
F1.001.40 0.0390.055
F22.000.078
F32.002.400.0780.094
G10.900.429
H15.4515.75 0.6080.620
L2
L4
F2
L1
F3
D
L19.8520.15 0.7810.793
L13.704.30 0.1450.169
L218.500.728
L314.2014.80 0.5590.582
ME
L434.601.362
L55.500.216
MillimetersInches
Min.MaxMin.Max.
M2.003.00 0.0780.118
V5°5°
V260°60°
Dia.3.553.65 0.1390.143
6/8Doc ID 018924 Rev 1
Page 7
Device name or AN #Ordering information
3 Ordering information
Table 7.Ordering information
Order codeMarkingPackageWeightBase qtyDelivery mode
STTH6010WYSTTH6010WYDO-247
4 Revision history
Table 8.Document revision history
DateRevisionChanges
04-Nov-20111Initial release.
4.4 g
30Tube
Doc ID 018924 Rev 17/8
Page 8
Device name or AN #
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