The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
KA
A
K
DO-247
STTH6010W
Order codes
Part NumberMarking
STTH6010WSTTH6010W
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Surge non repetitive forward current tp = 10 ms Sinusoidal400A
Storage temperature range-65 to + 175°C
stg
T
Maximum operating junction temperature175°C
j
SymbolParameterValueUnit
R
th(j-c)
Table 3.Static electrical characteristics
Junction to case0.78°C/W
SymbolParameterTest conditionsMin.TypMax.Unit
T
= 25° C
(1)
I
R
Reverse leakage current
j
Tj = 125° C20200
= V
V
R
RRM
20
µA
(2)
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Forward voltage drop
F
= 380 µs, δ < 2 %
p
To evaluate the conduction losses use the following equation:
P = 1.3 x I
F(AV)
+ 0.0067 I
= 25° C
T
j
I
= 60 A
F
Tj = 150° C1.31.7
F2(RMS)
2.0
VTj = 100° C1.41.8
2/8
Page 3
STTH6010Characteristics
Table 4.Dynamic characteristics
SymbolParameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
SSoftness factor
Forward recovery time
t
fr
V
Forward recovery voltage
FP
Figure 1.Conduction losses versus
average current
P(W)
140
120
100
80
60
40
20
0
0 1020304050607080
=0.05
=0.1
I(A)
F(AV)
=0.2
=0.5
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
V
= 30 V, Tj = 25° C
R
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
IF = 1 A, dIF/dt = -200 A/µs,
= 30 V, Tj = 25° C
V
R
IF = 60 A, dIF/dt = -200 A/µs,
V
= 600 V, Tj = 125° C
R
= 60 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125° C
V
R
= 60 A dIF/dt = 100 A/µs
I
F
= 1.5 x V
V
FR
I
= 60 A, dIF/dt = 100 A/µs,
F
, Tj = 25° C
Fmax
Tj = 25° C
Figure 2.Forward voltage drop versus
I (A)
FM
=1
T
200
180
160
140
120
100
80
60
40
20
0
0.00.51.01.52.02.53.03.5
Min.TypMax.Unit
forward current
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
115
6180
ns
4965
3140A
1
750ns
4V
Tj=25°C
(Maximum values)
V(V)
FM
Figure 3.Relative variation of thermal
impedance junction to case
versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-031.E-021.E-011.E+00
t (s)
p
Figure 4.Peak reverse recovery current
versus dI
I (A)
RM
70
VR=600V
T
=125°C
j
60
50
40
30
20
10
3/8
IF=0.5 x I
F(AV)
0
050100 150200250 300350 400 450500
/dt (typical values)
F
IF= 2 x I
IF= I
F(AV)
dI /dt(A/µs)
F
F(AV)
Page 4
CharacteristicsSTTH6010
Figure 5.Reverse recovery time versus
dI
/dt (typical values)
F
t (ns)
rr
700
600
IF= 2 x I
F(AV)
dI /dt(A/µs)
F
IF=I
)
F(AV
500
400
300
200
100
0
050100 150 200 250 300 350 400 450 500
IF=0.5 x I
VR=600V
T
=125°C
j
F(AV)
Figure 7.Softness factor versus
dI
/dt (typical values)
F
S factor
1.50
IF=2 x I
F(AV)
VR=600V
=125°C
T
1.25
1.00
0.75
0.50
j
dI /dt(A/µs)
F
050100 150 200 250 300 350 400 450 500
Figure 6.Reverse recovery charges versus
dIF/dt (typical values)
Q (µC)
rr
10
VR=600V
9
T
=125°C
j
8
7
6
5
4
3
2
1
0
050100 150200 250 300350 400450 500
IF= 2 x I
F(AV)
dI /dt(A/µs)
F
IF= I
F(AV)
IF=0.5 x I
F(AV)
Figure 8.Relative variations of dynamic
parameters versus junction
temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
255075100125
S
factor
I
RM
t
Q
RR
RR
T (°C)
j
IF= I
VR=600V
Reference: T
F(AV)
=125°C
j
4/8
Page 5
STTH6010Characteristics
Figure 9.Transient peak forward voltage
versus dI
V(V)
FP
20
IF= I
F(AV)
18
Tj=125°C
16
14
12
10
8
6
4
2
0
0100200300400500
/dt (typical values)
F
dI /dt(A/µs)
F
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
100
V
osc
F=1MHz
=30mV
Tj=25°C
Figure 10. Forward recovery time versus dI
F
/dt
(typical values)
t (ns)
fr
1200
1000
800
600
400
dI /dt(A/µs)
200
0100200300400500
RMS
F
IF= I
F(AV)
VFR= 1.5 x VFmax.
=125°C
T
j
V(V)
10
1101001000
R
5/8
Page 6
Package informationSTTH6010
2 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.80 Nm
Maximum torque value: 1.0 Nm
Table 5.DO-247 dimensions
DIMENSIONS
REF.
MillimetersInches
Min.MaxMin.Max.
A4.855.15 0.1910.203
V
D2.202.60 0.0860.102
E0.400.80 0.0150.031
V
H
L5
L
L3
V2
F
G
Dia
A
F1.001.40 0.0390.055
F22.000.078
F32.002.40 0.0780.094
G10.900.429
H15.4515.75 0.6080.620
L2
L4
F2
L1
F3
D
L19.8520.15 0.7810.793
L13.704.30 0.1450.169
L218.500.728
L314.2014.80 0.5590.582
ME
L434.601.362
L55.500.216
M2.003.00 0.0780.118
V5°5°
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
6/8
V260°60°
Dia.3.553.65 0.1390.143
Page 7
STTH6010Ordering information
3 Ordering information
Part NumberMarkingPackageWeightBase qty Delivery mode
STTH6010WSTTH6010WDO-247
4 Revision history
DateRevisionDescription of Changes
02-Mar-20061First issue.
4.4 g
30Tube
7/8
Page 8
STTH6010
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