The STTH200W04TV1, which uses ST turbo 2,
400 V technology, is especially suited to be used
for DC/DC and DC/AC converters in secondary
stage of MIG/MMA/TIG welding machine.
Housed in ST’s ISOTOP, this device offers high
power integration for all welding machines and
industrial applications.
A2
ISOTOP
STTH200W04TV1
Table 1.Device summary
SymbolValue
I
F(Peak)
V
RRM
(max)150 °C
T
j
V
(typ)1.05 V
F
(typ)40 ns
t
rr
2 x 100 A
400 V
June 2012Doc ID 023217 Rev 11/8
This is information on a product in full production.
www.st.com
8
Page 2
CharacteristicsSTTH200W04TV1
1 Characteristics
Table 2.Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
SymbolParameterValueUnit
V
I
F(RMS)
I
F(Peak)
I
FSM
T
Table 3.Thermal resistance
SymbolParameter
Repetitive peak reverse voltage400V
RRM
Forward rms current200A
Peak forward current, δ = 0.2Tc = 90 °C Per diode200A
Surge non repetitive forward currenttp = 10 ms sinusoidal800A
Storage temperature range-65 to + 150 °C
stg
Maximum operating junction temperature+150 °C
T
j
Value
(max).
Unit
Per diode0.9
R
R
th(j-c)
Junction to case
Total0.5
Coupling0.10°C/W
th(c)
°C/W
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.95 x I
2/8Doc ID 023217 Rev 1
+ 0.0035 I
F(AV)
F2(RMS)
Page 3
STTH200W04TV1Characteristics
Table 5.Dynamic electrical characteristics
SymbolParameterTest conditionsMin.Typ.Max.Unit
Q
S
V
Figure 1.Average forward power dissipation
Reverse recovery
RR
charge
Softness factor0.3
factor
Reverse recovery
I
RM
current
Reverse recovery
t
rr
time
Forward recovery
t
fr
time
Forward recovery
FP
voltage
Tj = 125 °C
T
= 25 °C
j
= 25 °C2µs
T
j
= 25 °C
T
j
I
= 100 A, VR = 320 V
F
dIF/dt = -200 A/µs
IF = 100 A, VR = 200 V
/dt = 100 A/µs
dI
F
= 1 A, VR = 30 V
I
F
dIF/dt = -100 A/µs
= 100 A, dIF/dt = 100 A/µs
I
F
= 2 V
V
FR
Figure 2.Forward voltage drop versus
versus average forward current (per
forward current (per diode)
0.9µC
1723A
4055µs
3.04.5V
diode)
P
(W)
F(AV)
200
180
160
140
120
100
80
60
40
20
0
020406080100120140
δ=0.05
I
F(AV)
δ=0.1
(A)
δ=0.2
δ=0.5
=tp/T
δ
δ=1
T
tp
I
(A)
I
FM
1000.0
Tj=150°C
Tj=150°C
(Maximum values)
(Maximum values)
100.0
Tj=150°C
Tj=150°C
(Typicalvalues)
(Typical values)
10.0
1.0
0.1
0.00.40.81.21.62.02.4
Tj=25°C
(Maximum values)
VFM(V)
Doc ID 023217 Rev 13/8
Page 4
CharacteristicsSTTH200W04TV1
Figure 3.Relative variation of thermal
impedance junction to case versus
pulse duration
Z
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-041.E-031.E-021.E-011.E+001.E+01
/R
th (j-c)
Single pulse
th( j-c)
tP(s)
Figure 5.Reverse recovery time versus
dI
/dt (typical values, per diode)
F
trr(ns)
160
140
120
100
80
60
40
20
0
050100150200 250 300 350400450 500
IF=I
F(AV)
VR= 320 V
T
=125 °C
j
dIF/dt(A/µs)
Figure 4.Peak reverse recovery current
versus dI
/dt
F
(typical values, per diode)
I
(A )
RM
40
IF= I
35
30
F(AV)
= 320 V
V
R
Tj= 125 °C
25
20
15
10
5
dIF/dt(A/µs)
0
050100 150 200 250 300 350 400 450 500
Figure 6.Reverse recovery charges versus
dIF/dt (typical values, per diode)
(n C )
Q
rr
1800
I
= I
F
1600
1400
1200
1000
800
600
400
200
F(AV)
VR= 320 V
T
=125 °C
j
0
050 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Figure 7.Reverse recovery softness factor
versus dI
Figure 8.Relative variations of dynamic
/dt
F
(typical values, per diode)
S
Factor
0.5
I
= I
F
F(AV)
VR= 320 V
T
=125 °C
j
0.4
0.3
0.2
0.1
dIF/dt(A/µs)
0.0
050100 150 200 250 300 350 400 450 500
4/8Doc ID 023217 Rev 1
2.0
S
FACTOR
1.5
1.0
I
RM
0.5
Q
RR
0.0
255075100125
parameters versus junction
temperature
IF=I
VR=320 V
Reference: Tj=125°C
F(AV)
Tj(°C)
Page 5
STTH200W04TV1Characteristics
Figure 9.Transient peak forward voltage
versus dI
Figure 10. Forward recovery time versus dI
/dt
F
(typical values, per diode)
(typical values, per diode)
V
(V)
FP
10
I
= I
F
F(AV)
T
= 125°C
j
8
6
4
2
dIF/dt(A/µs)
0
050100 150200250300350400450500
t
(ns)
fr
1800
1600
1400
1200
1000
800
600
400
200
0
050100 150 200 250 300 350400 450 500
IF= I
VFR= 2 V
=125 °C
T
j
dIF/dt(A/µs)
F(AV)
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
1000
V
OSC
F=1 MHz
=30 mV
Tj=25 °C
RMS
F
/dt
100
VR(V)
1101001000
Doc ID 023217 Rev 15/8
Page 6
Package informationSTTH200W04TV1
2 Package information
●Epoxy meets UL94, V0
●Cooling method: by conduction (C)
●Recommended torque value: 1.5 N · m
●Maximum torque value: 1.5 N · m
STMicroelectronics strongly recommend the uses of the screws delivered with this
product.The use of another screw is entirely at the user’s own risk and will invalidate the
warranty.
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
Table 6.ISOTOP dimensions
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
MillimetersInches
Min.Max.Min.Max.
E
G2
C
A11.8012.200.4650.480
A18.909.100.3500.358
A
A1
E2
F1F
C2
B7.88.200.3070.323
C0.750.850.0300.033
C21.952.050.0770.081
D37.8038.201.4881.504
D131.5031.701.2401.248
E25.1525.500.9901.004
P1
D1
S
D
B
G
E123.8524.150.9390.951
E224.80 typ. 0.976 typ.
G14.9015.100.5870.594
G112.6012.800.4960.504
G23.504.300.1380.169
ØP
G1
E1
F4.104.300.1610.169
F14.605.000.1810.197
P4.004.300.1570.69
6/8Doc ID 023217 Rev 1
P14.004.400.1570.173
S30.1030.301.1851.193
Page 7
STTH200W04TV1Ordering information
3 Ordering information
Table 7.Ordering information
Order codeMarkingPackageWeightBase qty
STTH200W04TV1 STTH200W04TV1ISOTOP
4 Revision history
Table 8.Document revision history
DateRevisionChanges
19-Jun-20121First issue.
27 g
(without screws)10(with screws)
Delivery
mode
Tube
Doc ID 023217 Rev 17/8
Page 8
STTH200W04TV1
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