Datasheet STTH200L06TV Datasheet (ST)

Features

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

STTH200L06TV

Turbo 2 ultrafast high voltage rectifier

A1 K1

A2 K2

K1

Description

The STTH200L06TV, which is using ST Turbo 2
600 V technology, is specially suited for use in
switching power supplies, and industrial
applications (such as welding), as rectification
diode.

K2

A2

ISOTOP

STTH200L06TV1

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

(typ) 0.95 V

V

F

t

(max) 80 ns

rr

A1

Up to 2 x 120 A

600 V

150 °C

TM: ISOTOP is a trademark of STMicroelectronics

September 2011 Doc ID 10767 Rev 2 1/8

www.st.com

8

Characteristics STTH200L06TV

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameter

Repetitive peak reverse voltage 600 V

RRM

Forward rms current 180 A

T

= 65 °C Per diode 100 A

Average forward current, δ = 0.5

Surge non repetitive forward current tp = 10 ms Sinusoidal 800 A

FSM

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature 150 °C

T

j

c

= 35 °C Per diode 120 A

T

c

Symbol Parameter Maximum Unit

Per diode 0.60

R

R

Junction to case

th(j-c)

Coupling 0.1

th(c)

°C/WTo ta l 0 .3 5

When the diodes 1 and 2 are used simultaneously:

Δ T

j (diode1)

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= P

(diode1)

x R

th(j-c) (per diode)

+ P

(diode2)

x R

th(c)

T

= 25 °C

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

R

(2)

Forward voltage drop Tj = 25 °C IF = 100 A 1.55

F

j

= 125 °C 100 1000

T

j

= 150 °C 0.95 1.20

T

j

To evaluate the maximum conduction losses use the following equation:
P = 0.93 x I

2/8 Doc ID 10767 Rev 2

F(AV)

+ 0.0027 I

F2(RMS)

= V

V

R

RRM

µA

V

100

STTH200L06TV Characteristics

Table 5. Dynamic characteristics (per diode)

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery
time

Reverse recovery
current

Forward recovery
time

Forward recovery
voltage

= 25 °C

T

j

= 125 °C

T

j

= 25 °C

T

j

T

= 25 °C

j

Test conditions

I

= 0.5 A, Irr = 0.25 A,

F

= 1 A

I

R

= 1 A, dIF/dt = 50 A/µs,

I

F

= 30 V

V

R

I

= 100 A, dIF/dt = 400 A/µs,

F

dIF/dt = 100 A/µs

= 100 A, dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

= 100 A, dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

Figure 1. Conduction losses versus average

forward current (per diode)

P(W)

200

180

160

140

120

100

δ = 0.05

80

60

40

20

0

0 20 40 60 80 100 120 140 160

δ = 0.2

δ = 0.1

I (A)

F(AV)

δ = 0.5

δ = 1

δ

=tp/T

T

tp

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

Min. Typ. Max. Unit

80

85 120

15 20 A

Fmax

Fmax

3.4 V

700 ns

Figure 2. Forward voltage drop versus

forward current (per diode)

I (A)

FM

200

180

160

140

120

100

80

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

(maximum values)

T =150°C

j

(typical values)

T =150°C

j

V (V)

FM

T =25°C

j

(maximum values)

Figure 4. Peak reverse recovery current

versus dI

F

/dt

(typical values, per diode)

I (A)

RM

60

V =400V

R

T =125°C

j

50

40

30

20

10

0

0 50 100 150 200 250 300 350 400 450 500

I =0.5 x I

F F(AV)

I=I

dI /dt(A/µs)

F

F F(AV)

I =2 x I

F F(AV)

ns

Doc ID 10767 Rev 2 3/8

Characteristics STTH200L06TV

Figure 5. Reverse recovery time versus dIF/dt

(typical values, per diode)

t (ns)

rr

1400

1200

1000

800

600

400

200

0

I =2 x I

F F(AV)

I=I

F F(AV)

0 50 100 150 200 250 300 350 400 450 500

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

V =400V

R

T =125°C

j

Figure 7. Reverse recovery softness factor

versus dI

/dt

F

(typical values, per diode)

S factor

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

I < 2 x I

F F(AV)

V =400V

R

T =125°C

j

Figure 9. Transient peak forward voltage

versus dI

/dt

F

(typical values, per diode)

V (V)

FP

8

I=I

F F(AV)

T =125°C

j

7

6

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Figure 6. Reverse recovery charges versus

dI

/dt (typical values, per diode)

F

Q (µC)

rr

5.0

V =400V

R

T =125°C

j

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 100 200 300 400 500

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

Figure 8. Relative variations of dynamic

parameters versus junction
temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125

Q

RR

t

rr

Figure 10. Forward recovery time versus dI

S factor

I=I

F F(AV)

V =400V

R

Reference:T =125°C

I

RM

T (°C)

j

j

F

(typical values, per diode)

t (ns)

fr

600

550

500

450

400

350

300

250

200

150

100

50

0

0 100 200 300 400 500

dI /dt(A/µs)

F

I=I

F F(AV)

V =1.1 x V max.

FR F

T =125°C

j

/dt

4/8 Doc ID 10767 Rev 2

STTH200L06TV Characteristics

Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)

C(pF)

10000

1000

100

V (V)

10

1 10 100 1000

R

F=1MHz

V =30mV

OSC RMS

T =25°C

j

Doc ID 10767 Rev 2 5/8

Package information STTH200L06TV

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. ISOTOP dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

E

G2

C

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

A

A1

E2

F1 F

C2

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004

P1

D1

S

D

B

G

E1 23.85 24.15 0.939 0.951

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

ØP

G1

E1

6/8 Doc ID 10767 Rev 2

G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

STTH200L06TV Ordering information

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STTH200L06TV1 STTH200L06TV1 ISOTOP

4 Revision history

Table 8. Document revision history

Date Revision Changes

07-Sep-2004 1 First issue.

05-Sep-2011 2 Updated Figure 6.

27 g

(without screws)10(with screws)

Tu be

Doc ID 10767 Rev 2 7/8

STTH200L06TV

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2011 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

8/8 Doc ID 10767 Rev 2