Datasheet STTH20003TV Datasheet (ST)

Page 1
Mian product characteristics

STTH20003TV

Ultrafast high voltage rectifier

I
F(AV)
V
RRM
T
(max) 150° C
j
(typ) 0.95 V
V
F
(max) 90 ns
t
rr
Features and benefits
■ Combines highest recovery and reverse
voltage performance
■ Package insulation voltage 2500 V
■ low inductance and low capacitance allow
up to 2 x 100 A
300 V
rms
A1 K1
A2 K2
K1
A1
K2
A2
ISOTOP
STTH20003TV
simpler layout
Description
Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters.
Packaged in ISOTOP™, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies.
Table 1. Absolute ratings (limiting values, per diode, Tc = 25° C unless otherwise stated)
Order codes
Part number Marking
STTH20003TV STTH20003TV
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
TM: ISOTOP is a registered trademark of STMicroelectronics
September 2006 Rev 2 1/7
Repetitive peak reverse voltage 300 V
RMS forward current 180 A
Average forward current Tc = 85° C δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal 100 A
Storage temperature range -55 to + 150 ° C
stg
Maximum operating junction temperature 150 ° C
T
j
Per diode 100
Per device 200
A
www.st.com
7
Page 2
Characteristics STTH20003TV

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value (max). Unit
R
R
Junction to case
th(j-c)
Coupling 0.1
th(c)
°C/WTo ta l 0 .3 5
When diodes 1 and 2 are used simultaneously:
Per diode 0.55
∆ Tj(diode 1) = P(diode 1) x R

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ Max. Unit
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
F
(Per diode) + P(diode 2) x R
th(j-c)
= 25° C
T
j
T
= 125° C 0.2 2 mA
j
T
= 25° C
j
Tj = 150° C 0.8 0.95
= 300 V
V
R
= 100 A
I
F
th(c)
200 µA
1.20 V
To evaluate the conduction losses use the following equation: P = 0.75 x I

Table 4. Dynamic characteristics (per diode)

Symbol Parameter Test conditions Min Typ Max Unit
+ 0.0020 I
F(AV)
F2(RMS)
S
t
rr
I
RM
factor
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Softness factor Tj = 125° C
Forward recovery time
Forward recovery voltage
= 25° C
T
j
T
= 125° C
j
= 25° C
T
j
T
= 25° C
j
2/7
= 0.5 A Irr = 0.25 A IR = 1 A 55
I
F
I
= 1 A dIF/dt = -50 A/µs
F
= 30 V
V
R
= 100 A VR = 200 V
I
F
dIF/dt = -200 A/µs
I
= 100 A VR = 200 V
F
dI
/dt = -200 A/µs
F
= 100 A dIF/dt = 200 A/µs
I
F
= 1.1 x V
V
FR
= 100 A dIF/dt = 200 A/µs
I
F
VFR = 1.1 x V
Fmax
Fmax
ns
90
18 A
0.3
1400 ns
5V
Page 3
STTH20003TV Characteristics
Figure 1. Conduction losses versus
average forward current (per diode)
P1(W)
120
100
80
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
60
40
20
0
0 20 40 60 80 100 120
I (av) (A)
F
δ
=t /T
T
p
Figure 3. Relative variation of thermal
impedance junction to case versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.8
0.6
0.4
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0 5E+0
t (s)
p
δ
=t /T
T
p
δ = 1
Figure 2. Forward voltage drop versus
forward current (per diode)
I (A)
FM
500
100
Tj=125°C
(Typical values)
Tj=25°C
Tj=125°C
10
t
p
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V (V)
FM
Figure 4. Peak reverse recovery current
versus dI
/dt (90% confidence, per
F
diode)
I (A)
RM
40
V =200V
R
T =125°C
j
35
30
I =0.5xI (av)
25
FF
20
15
10
t
p
5
0
0 50 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
IF=I (av)
F
I =2xI (av)
FF
Figure 5. Reverse recovery time versus
dI
/dt (90% confidence, per diode)
F
t (ns)
rr
260 240 220 200 180 160 140 120 100
80 60 40 20
0
0 50 100 150 200 250 300 350 400 450 500
I =2xI (av)
FF
I=I(av)
FF
dI /dt(A/µs)
F
I =0.5xI (av)
FF
V =200V
R
T =125°C
j
Figure 6. Softness factor (t
dI
/dt (typical values, per diode)
F
S factor
0.6
0.5
) versus
b/ta
V =200V
R
T =125°C
j
0.4
0.3
0.2
0.1
dI /dt(A/µs)
0.0 0 50 100 150 200 250 300 350 400 450 500
F
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Page 4
Characteristics STTH20003TV
Figure 7. Relative variations of dynamic
parameters versus junction temperature (reference: T
= 125° C)
j
Figure 8. Transient peak forward voltage
versus dI
/dt (90% confidence, per
F
diode)
2.4
2.2
2.0
1.8
S factor
1.6
1.4
1.2
1.0
0.8
I
RM
0.6
0.4
0.2
0.0 25 50 75 100 125
T (°C)
j
Figure 9. Forward recovery time versus dI
(90% confidence, per diode)
t (ns)
fr
1000
900 800 700 600 500 400 300 200 100
0
0 50 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
V =1.1 x V max.
FR F
I=I(av)
FF
T =125°C
j
F
/dt
V (V)
FP
8
I=I(av)
FF
T =125°C
j
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
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Page 5
STTH20003TV Package information

2 Package information

● Epoxy meets UL94, V0
● Cooling method: by conduction (C)
● Recommended torque value: 1.3 Nm
● Maximum torque value: 1.5 Nm

Table 5. ISOTOP Dimensions

Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
E
G2
C
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
A
A1
E2
F1 F
C2
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
P1
D1
S
D
B
G
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
ØP
G1
E1
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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Page 6
Ordering information STTH20003TV

3 Ordering information

Ordering type Marking Package Weight Base qty Delivery mode
STTH20003TV STTH20003TV ISOTOP

4 Revision history

Date Revision Description of Changes
1999 2C First issue
5-Sep-2006 2
27 g
(without screws)10(with screws)
Reformatted to current standards. Thermal resistance updated in Table 2.
Tu b e
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Page 7
STTH20003TV
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