Datasheet STTH1R02 Datasheet (ST)

Main product characteristics

STTH1R02

Ultrafast recovery diode

I

F(AV)

V

RRM

T

(max) 175° C

j

(typ) 0.7 V

V

F

(typ) 15 ns

t

rr

1.5 A

200 V

Features and benefits

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

Description

The STTH1R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.

Packaged in DO-41, DO-15, SMA, and SMB, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.

K

DO-41

STTH1R02

K

SMA

STTH1R02A

KA

A

K

STTH1R02Q

A

K

STTH1R02U

A

DO-15

A

SMB

Order codes

Part Number Marking

STTH1R02 STTH1R02

STTH1R02RL STTH1R02

STTH1R02A R1A

STTH1R02Q STTH1R02Q

STTH1R02QRL STTH1R02Q

STTH1R02U 1R2S

March 2007 Rev 3 1/10

www.st.com

Characteristics STTH1R02

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

I

RRM

FRM

Repetitive peak reverse voltage 200 V

(1)

DO-41

Repetitive peak forward current

tp = 5 µs, F = 5 kHz

(1)

30 ADO-15

SMA / SMB

DO-41 / DO-15

I

F(RMS)

I

F(AV)

I

FSM

T

1. On infinite heatsink with 10 mm lead length

Table 2. Thermal parameters

RMS forward current

SMA /SMB

DO-41 T

DO-15 T

Average forward current, δ = 0.5

SMA T

SMB T

= 110° C

lead

= 110° C

lead

= 110° C

c

= 110° C

c

Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

50 A

1.5 A

Symbol Parameter Value Unit

DO-41 45

R

th(j-l)

Junction to lead Lead Length = 10 mm on infinite heatsink

DO-15 45

°C/W

SMA 30

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case

SMB 30

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 2 20

T

j

= 25° C IF = 4.5 A 1.2

T

j

T

= 25° C

j

Tj = 100° C 0.76 0.85

T

= 150° C 0.70 0.80

j

= V

V

R

= 1.5 A

I

F

RRM

0.89 1

3

T

To evaluate the conduction losses use the following equation:
P = 0.68 x I

F(AV)

+ 0.08 I

F2(RMS)

µA

V

2/10

STTH1R02 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 1.5 A, dIF/dt = -200 A/µs,

I

F

VR = 160 V, Tj = 125° C

I

= 1.5 A, dIF/dt = 100 A/µs

F

VFR = 1.1 x V

, Tj = 25° C

Fmax

IF = 1.5 A, dIF/dt = 100 A/µs,

= 25° C

T

j

Min. Typ Max. Unit

23 30

15 20

34 A

50 ns

2.1 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

50

45

40

35

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

δ

T

T

I

I

M

M

=tp/T

=tp/T

d

δ

Figure 3. Forward voltage drop versus

forward current (maximum values)

tp

tp

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration (SMA)

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Z

th(j-a)/Rth(j-a)

1.0

SMA

=1cm²

S

0.9

cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

ns

3/10

Characteristics STTH1R02

Figure 5. Relative variation of thermal

impedance junction to case versus
pulse duration (SMB)

Z

th(j-a)/Rth(j-a)

1.0

SMB

S

=1cm²

0.9

cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

Figure 7. Relative variation of thermal

impedance junction to case versus
pulse duration (DO-15)

Z

th(j-a)/Rth(j-a)

1.0

DO-15

Leads =10mm

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration (DO-41)

Z

th(j-a)/Rth(j-a)

1.0

DO-41

Lleads=10mm

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

Figure 8. Junction capacitance versus

reverse applied voltage (typical
values)

C(pF)

100

10

1

1 10 100 1000

V

F=1MHz

=30mV

osc

Tj=25°C

VR(V)

RMS

Figure 9. Reverse recovery charges

versus dI

QRR(nC)

80

IF=1.5A

V

=160V

70

R

60

50

40

30

20

10

0

10 100 1000

/dt (typical values)

F

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 10. Reverse recovery time versus dI

(typical values)

tRR(ns)

80

70

60

50

40

30

20

10

0

10 100 1000

Tj=125°C

Tj=25°C

IF=1.5A

V

=160V

R

dIF/dt(A/µs)

F

/dt

4/10

STTH1R02 Characteristics

Figure 11. Peak reverse recovery curent

versus dI

IRM(A)

8

IF=1.5A

=160V

V

R

7

6

5

4

3

2

1

0

10 100 1000

/dt (typical values)

F

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 13. Thermal resistance, junction to

ambient, versus copper surface
under each lead - SMA (Epoxy FR4,
copper thickness = 35 µm)

R

(°C/W)

th(j-a)

120

100

80

60

40

20

0

012345

SMA

SCU(cm²)

Figure 12. Dynamic parameters versus

junction temperature

QRR;IRM[Tj]/QRR;IRM[Tj=125°C]

1.4

IF=1.5A

=160V

V

R

1.2

1.0

I

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125 150

RM

Q

RR

Tj(°C)

Figure 14. Thermal resistance, junction to

ambient, versus copper surface
under each lead - SMB (Epoxy FR4,
copper thickness = 35 µm)

R

(°C/W)

th(j-a)

110

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

SCU(cm²)

SMB

Figure 15. Thermal resistance, junction to

ambient, versus copper surface
under each lead - DO 15 (Epoxy
FR4, copper thickness = 35 µm)

R

(°C/W)

th(j-a)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

DO-15

SCU(cm²)

Figure 16. Thermal resistance, junction to

ambient, versus copper surface
under each lead - DO-41 (Epoxy
FR4, copper thickness = 35 µm)

R

(°C/W)

th(j-a)

100

90

80

70

60

50

40

30

20

10

0

012345678910

S(cm²)

5/10

DO-41

Ordering information scheme STTH1R02

2 Ordering information scheme

STTH 1 R 02 XX

Ultrafast switching diode

Average forward current

1 = 1 A

Model R

Repetitive peak reverse voltage

02 = 200 V

Packag e

Blank = DO-41 in Ammopack
RL = DO-41 in Tape and reel
A = SMA in Tape and reel
Q = DO-15 in Ammopack
QRL = DO-15 in Tape and reel
U = SMB in Tape and reel

3 Package information

● Epoxy meets UL94, V0

Table 5. DO-41 dimensions

CC

Table 6. DO-15 dimensions

CC

D

A

A

B

ØD

ØB

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.1 5.20 0.160 0.205

B 2 2.71 0.080 0.107

C25.4 1

D 0.712 0.863 0.028 0.034

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 6.05 6.75 0.238 0.266

B 2.95 3.53 0.116 0.139

C 26 31 1.024 1.220

6/10

D 0.71 0.88 0.028 0.035

STTH1R02 Package information

Table 7. SMA dimensions

DIMENSIONS

Figure 17. SMA footprint (dimensions in mm)

1.73 1.48 1.73

4.94

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.03 0.075 0.080

A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065

c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

1.67

7/10

Package information STTH1R02

Table 8. SMB dimensions

Dimensions

E1

D

E

A1

C

L

A2

b

Ref.

Figure 18. SMB footprint (dimensions in mm)

2.23

1.64

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

2.23

2.30

6.10

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

8/10

STTH1R02 Ordering information

4 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH1R02 STTH1R02 DO-41 0.34 g 2000 Ammopack

STTH1R02RL STTH1R02 DO-41 0.34 g 5000 Tape and reel

STTH1R02A R1A SMA 0.068 g 5000 Tape and reel

STTH1R02Q STTH1R02Q DO-15 0.49 g 1000 Ammopack

STTH1R02QRL STTH1R02Q DO-15 0.49 g 6000 Tape and reel

STTH1R02U 1R2S SMB 0.11 g 2500 Tape and reel

5 Revision history

Date Revision Description of changes

03-May-2006 1 First issue

13-Oct-2006 2 Added DO-15 and SMB packages.

08-Mar-2007 3 Replaced Figure 8. Replaced e

cu

with copper thickness.

9/10

STTH1R02

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