Datasheet STTH1212 Datasheet (ST)

STTH1212

Ultrafast recovery - 1200 V diode

Main product characteristics

I

F(AV)

V

RRM

T

j

V

(typ) 1.25 V

F

(typ) 50 ns

t

rr

12 A

1200 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

KA

A

K

TO-220AC

STTH1212D

K

A

NC

D2PAK

STTH1212G

Order codes

Part Number Marking

STTH1212D STTH1212D

STTH1212G STTH1212G

STTH1212G-TR STTH1212G

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/9

www.st.com

9

Characteristics STTH1212

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameter

Repetitive peak reverse voltage 1200 V

RMS forward current 30 A

Average forward current, δ = 0.5 Tc = 130° C 12 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 160 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 1.6 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

= 25° C

(1)

I

R

Reverse leakage current

j

Tj = 125° C 7 70

= V

V

R

RRM

10

µA

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Forward voltage drop

F

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation:
P = 1.5 x I

F(AV)

+ 0.033 I

= 25° C

T

j

I

= 12 A

F

Tj = 150° C 1.25 1.9

F2(RMS)

2.2

VTj = 125° C 1.30 2.0

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STTH1212 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

30

25

20

15

10

5

0

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 12 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 12 A, dIF/dt = -200 A/µs,

I

F

V

= 600 V, Tj = 125° C

R

= 12 A dIF/dt = 50 A/µs

I

F

= 1.5 x V

V

FR

I

= 12 A, dIF/dt = 50 A/µs,

F

T

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

=tp/T

δ = 1

T

tp

Min. Typ Max. Unit

forward current

T=150°C

j

(typical values)

T=150°C

j

(maximum values)

V (V)

100

ns

50 70

16 24 A

2

400 ns

6V

T=25°C

j

(maximum values)

FM

3/9

Characteristics STTH1212

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

t (s)

p

1.E-03 1.E-02 1.E-01 1.E+00

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

t (ns)

rr

600

550

500

450

400

350

300

250

200

150

100

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

F

V =600V

R

T=125°C

j

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

40

V =600V

R

T=125°C

j

35

30

25

20

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

I =0.5 x I

FF(AV)

/dt (typical values)

F

I =2 x I

FF(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (µC)

rr

5.0

V =600V

R

T=125°C

j

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

F

Figure 7. Softness factor versus dIF/dt

(typical values)

S factor

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

4/9

I 2xI

≤

FF(AV)

V =600V

R

T=125°C

j

Figure 8. Relative variations of dynamic

parameters versus junction
temperature

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

25 50 75 100 125

S factor

I

RM

t

rr

Q

RR

T (°C)

j

I=I

FF(AV)

V =600V

R

Reference:T =125°C

j

STTH1212 Characteristics

Figure 9. Transient peak forward voltage

versus dI

V (V)

FP

45

I=I

FF(AV)

T=125°C

j

40

35

30

25

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 11. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

1000

100

10

V (V)

1

1 10 100 1000

R

F=1MHz

V =30mV

OSC RMS

T=25°C

j

Figure 10. Forward recovery time versus dI

(typical values)

t (ns)

fr

750

700

650

600

550

500

450

400

350

300

250

200

0 100 200 300 400 500

dI /dt(A/µs)

F

I=I

F F(AV)

V =1.5 x V max.

FR F

T=125°C

j

Figure 12. Thermal resistance junction to

ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e

R (°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

cu

S (cm²)

CU

= 35 µm)

F

/dt

5/9

Package mechanical data STTH1212

2 Package mechanical data

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Recommended torque value: 0.55 Nm (TO-220AC)

Maximum torque value: 0.7 Nm (TO-220AC)

Table 5. T0-220AC dimensions

DIMENSIONS

L2

F1

REF.

Millimeters Inches

Min. Max. Min. Max.

H2

Ø I

A

C

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

D 2.40 2.72 0.094 0.107

L5

L6

L7

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

L9

L4

F

G

D

H2 10.00 10.40 0.393 0.409

L2 16.40 typ. 0.645 typ.

L4 13.00 14.00 0.511 0.551

M

E

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.20 6.60 0.244 0.259

L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam. I 3.75 3.85 0.147 0.151

6/9

STTH1212 Package mechanical data

m

D

Table 6. D

L2

L

L3

2

PAK dimensions

E

A1

B2

B

G

* FLAT ZONE NO LESS THAN 2m

DIMENSIONS

REF.

Millimeters Inches

Min. Max Min. Max.

A 4.40 4.60 0.173 0.181

A

C2

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

C

R

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

A2

M

*

V2

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Figure 13. D2PAK footprint (dimensions in mm)

16.90

10.30

8.90

3.70

5.08

1.30

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

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Ordering information STTH1212

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH1212D STTH1212D TO-220AC 1.86 g 50 Tube

STTH1212G STTH1212G D2PA K 1 . 4 8 g 5 0 Tu b e

STTH1212G-TR STTH1212G D

2

PAK 1.48 g 1000 Tape & reel

4 Revision history

Date Revision Description of Changes

02-Mar-2006 1 First issue.

8/9

STTH1212

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