Datasheet STTH12012TV Datasheet (ST) [en, no]

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.30 V

V

F

(typ) 50 ns

t

rr

2 x 60 A

1200 V

150° C

Features and benefits

STTH12012TV

Ultrafast recovery - 1200 V diode

K2

A2

K1

A1

STTH12012TV

A1

K1

STTH12012TV2

K1

A2

A1

K2

A1

K2

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated package:

Electrical insulation = 2500 V

RMS

Capacitance = 45 pF

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

A2

K2

K1

A2

ISOTOP

Order codes

Part Number Marking

STTH12012TV1 STTH12012TV1

STTH12012TV2 STTH12012TV2

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH12012TV

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 1200 V

RMS forward current 150 A

Average forward current, δ = 0.5 Tc = 45° C per diode 60 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 600 A

Surge non repetitive forward
current

Storage temperature range -65 to + 150 °C

stg

T

Maximum operating junction temperature 150 °C

j

= 10 ms Sinusoidal 420 A

t

p

Symbol Parameter Value Unit

Per diode 0.74

R

R

th(j-c)

th(c)

Junction to case

°C/WTotal 0.42

Coupling thermal resistance 0.1

When the diodes are used simultaneously:
∆T

j(diode1)

Table 3. Static electrical characteristics

= P

(diode1)

x R

(per diode) + P

th(j-c)

(diode2)

x R

th(c)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

Tj = 25° C

VR = V

I

= 60 A

F

RRM

= 125° C 30 300

T

j

= 25° C

T

j

= 150° C 1.30 1.95

T

j

30

2.25

To evaluate the conduction losses use the following equation:
P = 1.50 x I

F(AV)

+ 0.0075 I

F2(RMS)

µA

VTj = 125° C 1.35 2.05

2/8

STTH12012TV Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

160

140

120

100

80

60

40

20

0

0 1020304050607080

δ=0.05

δ=0.1

I (A)

F(AV)

δ=0.2

δ=0.5

δ

=tp/T

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 1 A, dIF/dt = -200 A/µs,

I

F

VR = 30 V, Tj = 25° C

I

= 60 A, dIF/dt = -200 A/µs,

F

VR = 600 V, Tj = 125° C

= 60 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 60 A dIF/dt = 100 A/µs

I

F

VFR = 1.5 x V

= 60 A, dIF/dt = 100 A/µs,

I

F

= 25° C

T

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

δ=1

T

tp

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Min. Typ Max. Unit

forward current

Tj=150°C

Tj=150°C

(Maximum values)

(Maximum values)

Tj=150°C

Tj=150°C

(Typical values)

(Typical values)

125

63 85

50 70

32 45 A

1

750 ns

4.5 V

Tj= 25 °C

(Maximum values)

V (V)

FM

ns

3/8

Characteristics STTH12012TV

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

Single pulse

0.4

0.3

0.2

0.1

0.0

t (s)

p

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

t (ns)

rr

1000

900

800

IF= 2 x I

F(AV)

VR=600V
T

=125°C

j

700

IF=I

IF=I

)

)

F(AV

600

F(AV

500

IF=0.5 x I

400

300

200

F(AV)

dI /dt(A/µs)

F

0 50 100 150 200 250 300 350 400 450 500

Figure 7. Softness factor versus dIF/dt

(typical values)

S factor

2.00

1.75

1.50

1.25

1.00

0.75

dI /dt(A/µs)

0.50

F

0 50 100 150 200 250 300 350 400 450 500

IF= 2 x I

VR=600V
T

=125°C

j

F(AV)

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

80

VR=600V
T

=125°C

70

j

60

50

40

30

20

10

0

0 50 100 150 200 250 300 350 400 450 500

IF=0.5 x I

IF=0.5 x I

/dt (typical values)

F

IF= I

= I

F(AV)IF

F(AV)

F(AV)

F(AV)

dI /dt(A/µs)

F

IF= 2 x I

F(AV)

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (µC)

rr

12

VR=600V
T

=125°C

j

10

8

6

IF= 2 x I

F(AV)

IF= I

F(AV)

IF=0.5 x I

F(AV)

4

2

dI /dt(A/µs)

0

F

0 50 100 150 200 250 300 350 400 450 500

Figure 8. Relative variations of dynamic

parameters versus junction
temperature

2.00

1.75

1.50

S

factor

1.25

1.00

I

0.75

0.50

0.25

0.00
25 50 75 100 125

RM

tRRt

Q

RR

RR

T (°C)

j

IF= I

VR=600V

Reference: T

F(AV)

=125°C

j

4/8

STTH12012TV Characteristics

Figure 9. Transient peak forward voltage

versus dI

V (V)

FP

25

IF= I

F(AV)

Tj=125°C

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 11. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

1000

V

osc

F=1MHz

=30mV

Tj=25°C

RMS

Figure 10. Forward recovery time versus dI

(typical values)

t (ns)

fr

1400

1200

1000

800

600

400

200

0

0 100 200 300 400 500

dI /dt(A/µs)

F

IF= I

F(AV)

VFR= 1.5 x VFmax.

=125°C

T

j

F

/dt

100

V (V)

10

1 10 100 1000

R

5/8

Package mechanical data STTH12012TV

2 Package mechanical data

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Table 5. ISOTOP dimensions

DIMENSIONS

REF.

E

G2

A

A1

E2

F1 F

C

C2

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

Millimeters Inches

Min. Max Min. Max.

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

P1

E 25.15 25.50 0.990 1.004

E1 23.85 24.15 0.939 0.951

D1

S

D

B

G

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

ØP

G1

E1

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

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STTH12012TV Ordering information

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH12012TV1 STTH12012TV1 ISOTOP 27 g 10 Tube

STTH12012TV2 STTH12012TV2 ISOTOP 27 g 10 Tube

4 Revision history

Date Revision Description of Changes

02-Mar-2006 1 First issue.

7/8

STTH12012TV

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