Datasheet STTH12010TV Datasheet (ST)

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STTH12010TV

Ultrafast recovery - high voltage diode

Main product characteristics

F(AV)

RRM

(typ) 1.30 V

(typ) 49 ns

2 x 60 A

1000 V

150° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated package

– Electrical insulation = 2500 V

RMS

Capacitance = 45 pF

Description

The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

K1 A2

ISOTOP

STTH12010TV1

STTH12010TV2

Order codes

Part Number Marking

STTH12010TV1 STTH12010TV1

STTH12010TV2 STTH12010TV2

ISOTOP

These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of the equipment

March 2006 Rev 1 1/8

www.st.com

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Characteristics STTH12010TV

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

RRM

F(RMS)

F(AV)

FRM

FSM

Table 2. Thermal parameters

Repetitive peak reverse voltage 1000 V

RMS forward current 150 A

Average forward current, δ = 0.5 Per diode Tc = 50° C 60 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 750 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature 150 °C

Symbol Parameter Value Unit

Per diode 0.80

th(j-c)

th(c)

Junction to case

°C/WTotal 0.45

Coupling thermal resistance 0.1

When the diodes are used simultaneously: ∆T

j(diode1)

Table 3. Static electrical characteristics

= P

(diode1)

x R

(per diode) + P

th(j-c)

(diode2)

x R

th(c)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

= 380 µs, δ < 2 %

= 25° C

= 125° C 20 200

= 25° C

= 150° C 1.30 1.70

= V

= 60 A

RRM

2.0

To evaluate the conduction losses use the following equation: P = 1.3 x I

F(AV)

+ 0.0067 I

F2(RMS)

µA

VTj = 100° C 1.40 1.80

2/8

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STTH12010TV Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

Reverse recovery time

Reverse recovery current

S Softness factor

Forward recovery time

Forward recovery voltage

Figure 1. Conduction losses versus

average current

P(W)

140

120

100

0 1020304050607080

=0.05

=0.1

I (A)

F(AV)

=0.2

=0.5

Test conditions

IF = 1 A, dIF/dt = -50 A/µs, V

= 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

= 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -200 A/µs,

= 30 V, Tj = 25° C

IF = 60 A, dIF/dt = -200 A/µs, V

= 600 V, Tj = 125° C

= 60 A, dIF/dt = -200 A/µs,

= 600 V, Tj = 125° C

= 60 A dIF/dt = 100 A/µs

= 1.5 x V

= 60 A, dIF/dt = 100 A/µs,

, Tj = 25° C

Fmax

Tj = 25° C

Figure 2. Forward voltage drop versus

I (A)

200

180

160

140

120

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

115

61 80

49 65

31 40 A

750 ns

Tj=25°C

(Maximum values)

V (V)

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

Figure 4. Peak reverse recovery current

versus dI

I (A)

VR=600V T

=125°C

0 50 100 150 200 250 300 350 400 450 500

3/8

IF=0.5 x I

/dt (typical values)

IF= I

F(AV)

dI /dt(A/µs)

IF= 2 x I

F(AV)

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Characteristics STTH12010TV

050100150200250 300 350400450 500

Figure 5. Reverse recovery time versus

/dt (typical values)

t (ns)

1000

900

800

IF= 2 x I

F(AV)

VR=600V T

=125°C

700

600

500

IF=I

)

F(AV

400

300

200

100

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

IF=0.5 x I

F(AV)

Figure 7. Softness factor versus

/dt (typical values)

S factor

1.50

IF= 2 x I

F(AV)

VR=600V T

=125°C

1.25

1.00

0.75

dI /dt(A/µs)

0.50 0 50 100 150 200 250 300 350 400 450 500

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (µC)

VR=600V T

=125°C

IF= 2 x I

F(AV)

IF= I

F(AV)

IF=0.5 x I

F(AV)

dI /dt(A/µs)

Figure 8. Relative variations of dynamic

parameters versus junction temperature

2.0

1.8

factor

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 25 50 75 100 125

Reference: T

T (°C)

IF= I

F(AV)

VR=600V

=125°C

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STTH12010TV Characteristics

Figure 9. Transient peak forward voltage

versus dI

V(V)

IF= I

F(AV)

Tj=125°C

0 100 200 300 400 500

/dt (typical values)

dI /dt(A/µs)

Figure 11. Junction capacitance versus

reverse voltage applied (typical values)

C(pF)

1000

100

osc

F=1MHz

=30mV

Tj=25°C

RMS

Figure 10. Forward recovery time versus

dIF/dt (typical values)

t (ns)

1100

1000

900

800

700

600

500

400

300

200

0 100 200 300 400 500

dI /dt(A/µs)

IF= I

F(AV)

VFR= 1.5 x VFmax.

=125°C

V(V)

1 10 100 1000

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Package information STTH12010TV

2 Package information

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Table 5. ISOTOP dimensions

DIMENSIONS

F1 F

ØP

REF.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004

E1 23.85 24.15 0.939 0.951

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

Millimeters Inches

Min. Max Min. Max.

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

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STTH12010TV Ordering information

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH12010TV1 STTH12010TV1 ISOTOP 27 g 10 Tube

STTH12010TV2 STTH12010TV2 ISOTOP 27 g 10 Tube

4 Revision history

Date Revision Description of Changes

02-Mar-2006 1 First issue.

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STTH12010TV

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