Page 1
Main product characteristics
STTH10002
Ultrafast recovery diode
I
F(AV)
V
RRM
T
(max) 150° C
j
V
(typ) 0.72 V
F
(typ) 30 ns
t
rr
2 x 50 A
200 V
Features and benefits
■ Very low forward losses
■ Low recovery time
■ High surge current capability
■ Insulated
– Insulating voltage = 2500 V
rms
– Capacitance = 45 pF
Description
The STTH10002 is a dual rectifier suited for
welding equipment, and high power industrial
applications.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of power
converters.
K1
A1
K2
A2
A1 A1
K1
A2
K2
ISOTOP
STTH10002TV1
K2
A1
A2
K1
K2
K1
A2
ISOTOP
STTH10002TV2
Order codes
Part Number Marking
STTH10002TV1 STTH10002TV1
STTH10002TV2 STTH10002TV2
April 2006 Rev 1 1/8
www.st.com
Page 2
Characteristics STTH10002
1 Characteristics
Table 1. Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 200 V
RMS forward current Per diode 150 A
Average forward current, δ = 0.5
Per diode T
Per device T
= 100° C
c
= 95° C
c
Surge non repetitive forward current tp = 10 ms Sinusoidal 750 A
Storage temperature range -55 to + 175 ° C
stg
T
Maximum operating junction temperature 150 ° C
j
50 A
Symbol Parameter Value Unit
Per diode 1
R
R
th(j-c)
th(c)
Junction to case
Coupling 0.1
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
Table 3. Static electrical characteristics
(Per diode) + P (diode 2) x R
th(j-c)
th(c)
° C/WTotal 0.55
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 50 500
T
j
T
= 25° C
j
T
= 125° C IF = 100 A 0.90 1.0
j
Tj = 150° C
= V
V
R
RRM
I
= 50 A 1
F
= 100 A 1.15
I
F
I
= 50 A 0.72 0.80
F
= 100 A
I
F
0.86 0.97
50
T
To evaluate the conduction losses use the following equation:
P = 0.63 x I
F(AV)
+ 0.0034 I
F2(RMS)
µA
V
2/8
Page 3
STTH10002 Characteristics
/
Table 4. Dynamic characteristics
Symbol Parameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
V
= 30 V, Tj = 25 °C
R
= 1 A, dIF/dt = -200 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
= 50 A, dIF/dt = 200 A/µs,
I
F
= 160 V, Tj = 125 °C
V
R
IF = 50 A, dIF/dt = 200 A/µs
V
= 1.1 x V
FR
, Tj = 25 °C
Fmax
IF = 50 A, dIF/dt = 200 A/µs,
Tj = 25 °C
Min. Typ Max. Unit
53 65 ns
30 37
10 13 A
180 ns
1.6 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values, per
diode)
IM(A)
600
500
400
300
200
100
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 100 WP = 100 W
P = 60 WP = 60 W
P = 30 WP = 30 W
δ
T
T
I
I
M
M
=tp/T
=tp/T
d
δ
tp
tp
IFM(A)
300
250
200
150
100
50
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj=150°C
Tj=25°C
VFM(V)
Figure 3. Forward voltage drop versus
300
250
200
150
100
50
0
forward current (maximum values,
per diode)
IFM(A)
Tj=150°C
Tj=25°C
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration
Z
R
th(j-c)
th(j-c)
1.0
Single pulse
ISOTOP
0.1
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
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Page 4
Characteristics STTH10002
Figure 5. Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
1000
100
1 10 100 1000
V
F=1MHz
=30mV
osc
Tj=25°C
RMS
VR(V)
Figure 7. Reverse recovery time versus dIF/dt
(typical values)
tRR(ns)
120
110
100
90
80
70
60
50
40
30
20
10
0
10 100 1000
Tj=125 °C
Tj=25 °C
IF= 50 A
V
= 160 V
R
dIF/dt(A/µs)
Figure 6. Reverse recovery charges versus
dI
/dt (typical values)
F
QRR(nC)
450
IF= 50 A
400
V
=160 V
R
350
300
250
200
150
100
50
0
10 100 1000
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 8. Peak reverse recovery current
versus dI
IRM(A)
20
IF= 50 A
V
=160V
R
16
12
8
4
0
10 100 1000
/dt (typical values)
F
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 9. Dynamic parameters versus
junction temperature
QRR;IRM[Tj]/QRR;IRM[Tj=125°C]
1.4
IF= 50 A
V
=160V
R
1.2
1.0
I
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125 150
RM
Q
RR
Tj(°C)
4/8
Page 5
STTH10002 Ordering information scheme
2 Ordering information scheme
STTH 100 02 TVx
Ultrafast switching diode
Average forward current
100 = 100 A
Repetitive peak reverse voltage
02 = 200 V
Package
TVx = ISOTOP
5/8
Page 6
Package information STTH10002
3 Package information
Table 5. ISOTOP dimensions
DIMENSIONS
REF.
E
G2
A
A1
E2
F1 F
C
C2
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
Millimeters Inches
Min. Max. Min. Max.
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
P1
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
D1
S
D
B
G
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
ØP
G1
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
E1
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
6/8
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
Page 7
STTH10002 Ordering information
4 Ordering information
Part Number Marking Package Weight Base qty Delivery mode
STTH10002TV1 STTH10002TV1 ISOTOP 27 g 10 Tube
STTH10002TV2 STTH10002TV2 ISOTOP 27 g 10 Tube
5 Revision history
Date Revision Description of Changes
05-Apr-2006 1 First issue
7/8
Page 8
STTH10002
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