Datasheet STTA512F, STTA512D, STTA512B Datasheet (SGS Thomson Microelectronics)



STTA512D/F/B

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

t

(typ) 45ns

rr

(max) 2.0V

V

F

5A

1200V

FEATURESAND BENEFITS

SPECIFICTO THEFOLLOWINGOPERATIONS:
SNUBBING OR CLAMPING,
DEMA GNE T IZATIO N AND RECT IFIC A T IO N

ULTRA-FAST,SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGH FREQUENCY AND/OR HIGH PULSED
CURRENTOPERATION.

HIGHREVERSEVOLTAGECAPABILITY
INSULATEDPACKAGE: ISOWATT220AC

Electricalinsulation : 2000VDC
Capacitance: 12pF.

K

TO-220AC

STTA512D

A

K

K

DPAK

STTA512B

A

K

ISOWATT220AC

STTA512F

A

NC

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in
all highvoltageoperationswhichrequireextremely
fast,softand noise-freepower diodes.Due to their
optimizedswitchingperformancesthey also highly
decrease power losses in any associated

They are particularly suitable in motor control
circuitries, or in the primary of SMPSas snubber,
clamping or demagnetizingdiodes. They are also
suitable for secondary of SMPS as high voltage

rectifierdiodes.
switching IGBT or MOSFET in all ”freewheel
mode”operations.

ABSOLUTE RATINGS

(limitingvalues)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

Repetitivepeakreversevoltage 1200 V
Non repetitivepeakreverse voltage 1200 V
RMSforwardcurrent TO-220AC/ DPAK 20 A

ISOWATT220AC 10 A

I

FRM

I

FSM

T

stg

T

TURBOSWITCH is a trademark of STMicroelectronics.

November 1999 - Ed:4A

Repetitivepeakforward current tp = 5 µs F =5kHzsquare 70 A
Surgenon repetitiveforward current tp = 10ms sinusoidal 45 A
Storagetemperaturerange - 65 to + 150 °C
Maximumoperatingjunctiontemperature 150 °C

j

1/10

STTA512D/F/B

THERMAL ANDPOWERDATA

Symbol Parameter Conditions Value Unit

R

P

th(j-c)

P

1

max

Junctionto casethermal
resistance

Conductionpowerdissipation

=5Aδ=0.5

I

F(AV)

Totalpower dissipation
Pmax= P1+ P3 (P3 =10% P1)

TO-220AC/DPAK
ISOWATT220AC

TO-220AC/DPAK
ISOWATT220AC

TO-220AC/DPAK
ISOWATT220AC

Tc= 102°C
Tc= 84°C

Tc= 98°C
Tc= 78°C

4.0

5.5
12 W

13 W

STATICELECTRICAL CHARACTERISTICS

Symbol Parameter Testconditions Min Typ Max Unit

V

F*

I

R**

Forwardvoltagedrop IF=5A Tj =25°C

Reverseleakagecurrent VR=0.8x

V

RRM

Vto Thresholdvoltage Ip < 3.I

AV

Tj = 125°C 1.35
Tj = 25°C

Tj = 125°C 0.3
Tj = 125°C 1.57 V

2.2

2.0

100

2.0

Rd Dynamicresistance 86 mΩ

Test pulses : *tp= 380µs,

** tp= 5 ms ,

δ
δ

<2%
<2%

Toevaluate the maximum conductionlosses use the following equation:
P=V

toxIF(AV)

+rdxI

F2(RMS)

°C/W

V
V

A

µ

mA

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

rr

I

RM

S factor Softnessfactor Tj = 125°CV

Reverserecovery
time

Maximumreverse
recoverycurrent

Tj = 25°C

=0.5 A IR= 1A Irr=0.25A

I

F

I

=1A dIF/dt=-50A/µsVR=30V

F

45

95

Tj = 125°C VR = 600V IF=5A

/dt= -40A/µs

dI

F

/dt= -500A/µs20

dI

F

=600V IF=5A

R

dI

/dt= -500A/µs 1.2

F

7.5

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

Forwardrecovery
time

V

Fp

Peak forward voltage Tj = 25°C

Tj = 25°C
I

=5A, dIF/dt= 40A/µs

F

measuredat1.1

I

=5A,dIF/dt =40 A/µs

F

=40A,dIF/dt = 500A/µs50

I

F

VFmax

×

900

35

ns

A

/

ns

V

2/10

STTA512D/F/B

Fig.1: Conductionlosses versusaveragecurrent.

P1(W)

13
12

δ = 0.1

δ =0.2

δ= 0.5

11
10

9
8
7

δ =1

6
5
4
3
2
1
0

0123456

IF(av) (A)

Fig. 3: Peak reverse recovery current versus

dI

/dt(90% confidence).

F

IRM(A)

40

VR=600V
Tj=125°C

30

20

10

0

0 100 200 300 400 500

IF=2*IF(av)

IF=IF(av)

dIF/dt(A/µs)

Fig. 1: Forward voltage drop versus forward

current(maximumvalues).

IFM(A)

100.00

Tj=125°C

10.00

1.00

0.10

0.01

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VFM(A)

Fig. 4: Relative variation of thermal impedance

junctionto case versus pulse duration(TO-220AC
andDPAK).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

0.2

δ = 0.1

0.0

Single pulse

1E-4 1E-3 1E-2 1E-1 1E+0

tp(s)

Fig. 5: Relative variation of thermal impedance

junction to case versus pulse duration
(ISOWATT220AC).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ= 0.2

0.2

δ = 0.1

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 1E+1

tp(s)

Fig. 6: Reverserecovery timeversus dIF/dt (90%

confidence).

trr(ns)

400
350
300
250
200

IF=2*IF(av)

150
100

50

0

0 100 200 300 400 500

IF=IF(av)

dIF/dt(A/µs)

VR=600V
Tj=125°C

3/10

STTA512D/F/B

Fig.7: Softnessfactor (tb/ta)versusdIF/dt(typical

values).

S factor

1.40

VR=600V
Tj=125°C
IF<2*IF(av)

1.20

1.00

0.80

0.60
0 100 200 300 400 500

dIF/dt(A/µs)

Fig. 9: Transient peak forward voltage versus

dI

/dt(90% confidence).

F

VFP(V)

70

IF=IF(av)

60

Tj=125°C

50
40
30
20
10

0

0 100 200 300 400 500

dIF/dt(A/µs)

Fig. 8: Relative variation of dynamic parameters

versusjunctiontemperature(referenceTj=125°C).

1.1

1.0

0.9

S factor

IRM

0.8

Tj(°C)

0.7
25 50 75 100 125

Fig.10: Forwardrecoverytime versusdIF/dt(90%
confidence).

tfr(ns)

500

400

300

200

100

0 100 200 300 400 500

dIF/dt(A/µs)

VFR=1.1*VF max.
IF=IF(av)
Tj=125°C

4/10

APPLICATIONDATA

The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequencyor high pulsed current
operations. In such applications (Fig A to D),the
wayof calculatingthepowerlossesisgivenbelow:

TOTALLOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

STTA512D/F/B

CONDUCTION

LOSSES

in thediode

Fig.A : ”FREEWHEEL”MODE.

SWITCHING

TRANSISTOR

V

R

t

REVERSE

LOSSES

in thediode

T

SWITCHING

LOSSES

in the diode

DIODE:

TURBOSWITCH

SWITCHING

LOSSES

in the tansistor

due to the diode

IL

F=1/T =t/T

LOAD

5/10

STTA512D/F/B

Fig. B : SNUBBERDIODE. Fig. C : DEMAGNETIZINGDIODE.

PWM

t

T

F = 1/T = t/T

Fig.D : RECTIFIERDIODE.

STATIC& DYNAMIC CHARACTERISTICS . POWERLOSSES.
Fig. E: STATICCHARACTERISTICS

Conductionlosses:

I

P1 = V

t0.IF(AV)+Rd.IF2(RMS)

I

F

6/10

Rd

V

R

V

tOVF

I

R

V

Reverse losses:

P2 = V

R.IR

.(1-δ)

APPLICATIONDATA (Cont’d)

Fig.F: TURN-OFFCHARACTERISTICS

STTA512D/F/B

V

I

I

dI /dt

V

I

RM

I

V

I

trr = ta + tb

S = tb/ta

TRANSISTOR

F

DIODE

tbta

dI /dt

R

trr = ta + tb S = tb / ta

dIF/dt = VR/L

RECTIFIER

OPERATION

tbta

dI /dt

RM

R

IL

t

VR

V

Turn-onlosses:

(inthe transistor,due tothe diode)

2

×

I

I

RM

RM

× ( 3 + 2 ×

6

x

dI

×

I

× (S+2) ×

L

2

x

dI

F

F

dt

⁄

S

) ×

F

⁄

dt

F

P5=

+

V

R

V

×

R

Turn-offlosses(in the diode):

2

I

×

6

RM

xdI

×S×

F

F

dt

⁄

t

P3=

V

R

Turn-offlosses:
(withnon negligibleserial inductance)

2

I

V

t

R

P3’=

×

R

×

L

6

RM

xdI

I

RM

2

×S×

F

2

×

F

dt

⁄

+

F

P3,P3’and P5 are suitableforpowerMOSFETand
IGBT

Fig. G: TURN-ONCHARACTERISTICS

I

F

I

dI /dt

F

0

V

F

V

Fp

1.1V

F

0t

tfr

Fmax

t

Turn-onlosses:

P4= 0.4 (V

V

F

FP-VF

).I

Fmax.tfr

.F

7/10

STTA512D/F/B

PACKAGEDATA

DPAK

DIMENSIONS

REF.

Millimeters Inches

Min. Max Min. Max.

A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023

C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

FOOTPRINT DIMENSIONS(in millimeters)

6.7

6.7

6.7

3

1.61.6

2.32.3

8/10

PACKAGEDATA

ISOWATT220AC

H

L2

F

STTA512D/F/B

DIMENSIONS

A

B

Diam

L6

L7

L3

F1

DE

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.40 2.75 0.094 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039

F1 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

H 10.00 10.40 0.394 0.409
L2 16.00typ. 0.63 typ.
L3 28.60 30.60 1.125 1.205
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366

Diam 3.00 3.20 0.118 0.126

G

Coolingmethod: by conduction(C)
Recommendedtorque value: 0.55 m.N
Maximumtorque value:0.7 m.N

9/10

STTA512D/F/B

PACKAGEDATA

TO-220AC (JEDECoutline)

H2

L5

ØI

L2

L9

F1

F

G

L6

L4

DIMENSIONS

REF.

A

C

A 4.40 4.60 0.173 0.181

Millimeters Inches

Min. Max. Min. Max.

C 1.23 1.32 0.048 0.051

L7

D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

D

G 4.95 5.15 0.194 0.202

H2 10.00 10.40 0.393 0.409

L2 16.40 typ. 0.645typ.
L4 13.00 14.00 0.511 0.551

M

E

L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102typ.

Diam.I 3.75 3.85 0.147 0.151

Coolingmethod: by conduction(C)
Recommendedtorque value: 0.55 m.N
Maximumtorque value:0.7 m.N

Orderingtype Marking Package Weight Baseqty Deliverymode

STTA512D STTA512D TO-220AC 1.86g 50 Tube

STTA512F STTA512F ISOWATT220AC 2g 50 Tube
STTA512B A512 DPAK 0.3g 75 Tube

STTA512B-TR A512 DPAK 0.3g 2500 Tape & reel

Epoxymeets UL94,V0

Informationfurnishedis believed to be accurate andreliable.However,STMicroelectronics assumes no responsibility for theconsequences of
use ofsuch informationnor for any infringementof patents or otherrightsofthirdparties which mayresult fromits use. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice.This publicationsupersedes and replaces all informationpreviously supplied.
STMicroelectronics products are not authorized foruse as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

 1999 STMicroelectronics - Printed inItaly - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

10/10