The TURBOSWITCH is a very high performance
series of ultra-fast high voltagepowerdiodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations
and is particularly suitable and efficient in motor
controlfreewheelapplicationsandin boosterdiode
applicationsin power factorcontrolcircuitries.
Packaged either in TO-220AC, ISOWATT220AC
or in DPAK, these 600V devices are particularly
intendedfor useon 240V domesticmains.
ABSOLUTE RATINGS(limitingvalues)
SymbolParameterValueUnit
V
RRM
V
RSM
I
F(RMS)
Repetitivepeakreversevoltage600V
Non repetitivepeak reversevoltage600V
RMSforwardcurrentTO-220AC
Fig. 9: Relative cariation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220ACand DPAK).
Fig. 8: Forwardrecovery time versusdIF/dt.
tfr(ns)
500
450
400
350
90% CONFIDENCE Tj=125 C
VFr=1.1*VF max.
o
IF=IF(av)
300
250
200
150
100
50
0
0 102030405060708090100
dIF/dt(A/ s)
Fig. 10: Relative cariation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC).
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Page 5
APPLICATIONDATA
STTA506D/F/B
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
”FREEWHEELMode”application(Fig.A)
considering both the diode and the companion
transistor,thus optimizing the overall performance
in the end application.
TOTALLOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The way of calculating the power losses is given
below:
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the transistor
due to the diode
Fig.A : ”FREEWHEEL”MODE
SWITCHING
TRANSISTOR
V
R
F=1/T=t/T
IL
DIODE:
TURBOSWITCH
t
T
LOAD
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Page 6
STTA506D/F/B
APPLICATIONDATA (Cont’d)
Fig. B : STATICCHARACTERISTICS
I
I
F
Rd
V
R
V
tOVF
I
R
Conductionlosses :
P1 = V
t0.IF(AV)+Rd.IF2(RMS)
V
Reverse losses:
Fig.C : TURN-OFFCHARACTERISTICS
V
TRANSISTOR
I
I
dI /dt
F
V
I
RM
tbta
dI /dt
R
DIODE
IL
t
VR
R.IR
.(1-δ)
P2 = V
Turn-onlosses :
(inthe transistor,due to thediode)
Informationfurnishedisbelieved to be accurateand reliable.However, STMicroelectronics assumes noresponsibility for the consequences of
use of such information nor forany infringementofpatents or other rights of third parties which may result fromitsuse. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedesand replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress writtenapproval of STMicroelectronics.
The ST logo is a registeredtrademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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