Datasheet STTA406 Datasheet (SGS Thomson Microelectronics)

®

TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE

MAJOR PRODUC T CHARACTERISTICS

STTA406

I

P

V

RRM

(typ.) 25 ns

t

rr

(max) 1.5 V

V

F

4 A

600 V

FEATURES AND BENE FITS

SPECIFIC TO FREEWHEEL MODE OPERATIONS:
FREEWHEEL OR BOOSTER DIODE

ULTRA-FAST, AND SOF T RECOVERY
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR

HIGH FREQUENCY OPERATIONS

DESCRIPTION

The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.

TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all freewheel mode operations and

DO-201AD

is particularly suitable and efficient in motor control
freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged in DO-201AD this 600V device is
particularly intended for use on 240V domestic
mains.

ABSOLUTE RATINGS

(limiting values)

Symbol Parameter VALUE Unit

V

RRM

I

P

I

FRM

I

FSM

T

j

T

stg

(1) square waveform and on infinite heatsink

TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed: 3C

Repetitive peak reverse voltage 600 V
Peak forward current ( 1) Tamb = 65°C δ = 0.5

4A
Repetitive peak forward current tp = 5µs F = 5kHz square 30 A
Surge non repetitive forward current tp = 10 ms sinusoidal 80 A
Maximum operating junction temperature

125 °C

Storage temperature range - 40 to 150 °C

1/5

STTA406

THERMAL DAT A

Symbol Parameter Max. Unit

R

th(j-l)

R

th(j-a)

Junction to lead L lead = 10mm 20 °C/W
Junction to ambient on printed circuit L lead = 10mm 75 °C/W

STATIC ELECTRICAL CHARACTE RISTICS

Symbol Parameter Test conditions Typ. Max. Unit

** Forward voltage drop IF = 4 A Tj = 25°C

V

F

* Reverse leakage current VR = 0.8 V

I

R

V

to

Threshold voltage Ip < 3.I

F(AV)

RRM

Tj = 125°C

1.25

Tj = 25°C
Tj = 125°C 0.75

Tj = 125°C

1.75

1.5
50

2

1.15 V

Rd Dynamic resistance 85 mΩ

Test pulse : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses use the following equation :
P = V

x I

to

F(AV)

+ Rd x I

F2(RMS)

V
V

µA

mA

DYNAMIC ELECTRICAL CHARACTE RISTICS

TURN-OFF SWITCHING

Symbol Parameter Test conditions Typ. Max. Unit

t

rr

Reverse rec overy tim e IF = 0.5A IR = 1A Irr = 0.25A 25 ns

= 1A di/dt = -50A/µs VR = 30V 55 ns

I

F

TURN-ON SWITCHING

Symbol Parameter Test conditions Typ. Max. Unit

t

fr

V

FP

Forward re c o very time IF = 4 A dIF/dt = 100 A/µs
Peak forward voltage 20 V

Measured at 1.1 x V
Tj = 25°C

max.

F

200 ns

2/5

STTA406

Fig. 1:

Power dissipation versus average forward

current.

PF(av)(W)

3.5

3.0

2.5

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

2.0

1.5

1.0

0.5

IF(av)(A)

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Fig. 3:

T

=tp/T

δ

Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit boar d, e(Cu)= 35µm), recommended
pad layout).

K=[Zth(j-a)/Rth(j-a)]

1E+0

1E-1

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 2:

Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

tp

0.2

0.0
0 25 50 75 100 125

δ

=tp/T

Rth(j-a)=Rth(j-l)

Rth(j-a)=75°C/W

T

tp

Tamb(°C)

1E-2

Single pulse

1E-3

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

Fig 4-2 :

Forward voltage drop versus forward

current (high level).

IFM(A)

50

10

Maximum values

1

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

Tj=125°C

Tj=125°C

Typical values

VFM(V)

Tj=25°C

Maximum values

T

tp(s)

Fig. 4-1:

δ

=tp/T

tp

Forward voltage drop versus forward

current (low level).

IFM(A)

5

Tj=125°C

4

3

2

1

VFM(V)

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Typical values

Tj=125°C

Maximum values

Maximum values

Tj=25°C

3/5

STTA406

Fig 5 :

Reverse rec overy tim e vers us dI

F

/dt.

trr(ns)

250
225
200

IF=Ip

90% confidence

Tj=125°C

175
150
125
100

75
50
25

0

0 50 100 150 200 250 300 350 400 450 500

Fig. 7:

dI

Transient peak forward voltage versus

/dt.

F

dIF/dt(A/µs)

VFP(V)

25

20

IF=Ip

90% confidence

Tj=25°C

15

10

5

dIF/dt(A/µs)

0

0 20 40 60 80 100 120 140 160 180 200

Fig. 6:

Reverse rec overy curr ent ver sus dI

F

IRM(A)

15
14
13
12
11
10

9
8
7
6
5
4
3
2
1
0

Fig. 9:

IF=Ip

90% confidence

Tj=125°C

dIF/dt(A/µs)

0 50 100 150 200 250 300 350 400 450 500

Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

20
18
16
14
12
10

8
6
4
2
0

1 10 100 200

VR(V)

F=1MHz
Tj=25°C

/dt.

Fig. 8:

Forward recovery time versus dI

F

tfr(ns)

350
300
250

IF=Ip

90% confidence

Tj=25°C

Vfr=2V

200
150
100

50

dIF/dt(A/µs)

0

0 20 40 60 80 100 120 140 160 180 200

4/5

/dt.

PACKAGE ME CHANICAL D AT A

DO-201AD

STTA406

BA

note 1

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 9.50 0.374
B 25.40 1.000

C 5.30 0.209

∅

D 1.30 0.051

∅

E

ØD ØD

note 2

E

1 - The lead diameter ∅ D is not controlled over zone E
2 - The minimum axial length within which the device may be

placed with its leads bent at right angles is 0.59"(15 mm)

note 1

B

ØC

NOTES

E 1.25 0.049

Ordering type Marking Package W eight Base qty Delivery mode

STTA406 STTA406 DO-201AD 1.166g 600 Ammopack

STTA406RL STTA406 DO-201AD 1.166g 1900 Tape & reel

Cooling method: by conversion (method A)
Band indicated cathode
Epoxy meets UL94,V0

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© 1999 STMicroelectronics - Printed in Italy - All rights reser ved.

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