Datasheet STTA3006CW, STTA3006CP Datasheet (SGS Thomson Microelectronics)

Page 1
TURBOSWITCHULTRA-FASTHIGH VOLTAGE DIODES
MAINPRODUCT CHARACTERISTICS
STTA3006CW/CP
I
F(AV)
V
RRM
(typ) 35ns
t
rr
(max) 1.6V
V
F
2 x15A
600V
FEATURESAND BENEFITS
SPECIFICTO”FREEW HEELMODE”OPE RATION S: FREEWHEELOR BOOSTERDIODE.
ULTRA-FASTAND SOFTRECOVERY. VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION TRANSISTOR.
HIGHFREQUENCYOPERATIONS.
DESCRIPTION
A1
K
A2
A1
TO-247
STTA3006CW
A2
K
SOT93
STTA3006CP
A1
A2
K
controlfreewheelapplicationsand in boosterdiode applicationsin power factorcontrolcircuitries. Packagedeither in TO-247or SOT93,these 600V devicesare particularly intended for use on 240V domesticmains.
ABSOLUTE RATINGS
(limitingvalues, per diode)
Symbol Parameter Value Unit
V
RRM
V
RSM
I
F(RMS)
I
FRM
I
FSM
T
j
T
stg
TM : TURBOSWITCH is a trademarkof STMicroelectronics
November 1999 Ed: 4B
Repetitivepeak reversevoltage 600 V Non repetitivepeak reversevoltage 600 V RMSforwardcurrent 30 A Repetitivepeak forward current tp =5 µs F=5kHz square 200 A Surgenon repetitiveforwardcurrent tp=10 ms sinusoidal 230 A Maximumoperating junctiontemperature 150 °C Storagetemperaturerange -65to150 °C
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Page 2
STTA3006CW/CP
THERMAL AND POWER DATA
Symbol Parameter Test conditions Value Unit
R
th(j-c)
P
1
Junctionto case Perdiode
Total Coupling
Conductionpower dissipation Perdiode
= 30A δ=0.5
I
F(AV)
Tc= 110°C
1.9
1.0
0.1
20.5 W
°C/W
P
max
STATICELECTRICALCHARACTERISTICS
Totalpower dissipation Pmax= P1+ P3 (P3= 10% P1)
(perdiode)
Perdiode Tc=105°C
22.5 W
Symbol Parameter Testconditions Min Typ Max Unit
V
I
R**
V
F*
to
Forwardvoltage drop IF=15A Tj = 25°C
Tj = 125°C 1.3
Reverseleakagecurrent VR=0.8x
V
RRM
Thresholdvoltage Ip< 3.I
Tj=25°C Tj = 125°C2
Tj = 125°C 1.06 V
AV
1.8
1.6
100
5
rd Dynamicresistance 177 m
Test pulse : * tp = 380 µs, δ <2%
** tp = 5ms,
δ<2%
To evaluatethe maximumconductionlossesuse thefollowingequation : P=V
toxIF(AV)
DYNAMICELECTRICALCHARACTERISTICS
+rdxI
F2(RMS)
(perdiode)
TURN-OFF SWITCHING
Symbol Parameter Testconditions Min Typ Max Unit
V V
A
µ
mA
t
rr
Reverse recoverytime
I
RM
Maximum reverserecovery current
S factor Softnessfactor Tj =125°CV
Tj = 25°C
=0.5 A IR= 1A Irr = 0.25A
I
F
I
=1A dIF/dt=-50A/µsVR= 30V
F
Tj = 125°CVR= 400V IF=15A
/dt= -120 A/µs
dI
F
/dt= -500 A/µs 17.5
dI
F
=400V IF=15A
R
dI
/dt= -500 A/µs 0.5
F
35
65
12.5
TURN-ON SWITCHING
Symbol Parameter Test conditions Min Typ Max Unit
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t
fr
Forward recoverytime
V
Fp
Peak forward voltage
Tj =25°C
= 15A,dIF/dt= 120 A/µs
I
F
measuredat, 1.1
VFmax
×
500
Tj =25°C
= 15A,dIF/dt= 120 A/µs9
I
F
ns
A
/
ns
V
Page 3
STTA3006CW/CP
Fig.1:
Conductionlosses versusaverage current.
P1(W)
25
δ = 0.1
δ = 0.2
δ=0.5
20
δ =1
15
10
T
5
0
IF(av)(A)
0 2 4 6 8 1012141618
=tp/T tp
δ
Fig. 3: Relative variation of thermal transient impedancejunctiontocaseversus pulseduration.
K
1.0
Zth(j-c) (tp, )δ
K=
0.8
0.6
0.4
0.2
0.0
Rth(j-c)
δ= 0.5
δ =0.2
δ =0.1
Single pulse
tp(s)
T
=tp/T tp
δ
1E-4 1E-3 1E-2 1E-1 1E+0
Fig. 2:
Forward voltage drop versus forward
current(maximumvalues).
VFM(V)
200
Tj=125°C
100
10
IFM(A)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 4: Peak reverse recovery current versus dIF/dt(90% confidence).
IRM(A)
45 40
VR=400V
35
Tj=125°C
30 25 20 15 10
5 0
0 100 200 300 400 500 600 700 800 900 1000
IF=IF(av)
IF=2*IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
Fig. 5:
Reverserecovery time versus dIF/dt (90%
confidence).
trr(ns)
200 180 160 140 120 100
80 60
IF=0.5*IF(av)
40 20
0
0 100 200 300 400 500 600 700 800 900 1000
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/µs)
VR=400V Tj=125°C
Fig.6:
Softnessfactor(tb/ta) versus dIF/dt (typical
values).
S factor
1.0
0.8
0.6
0.4
0.2
0.0 0 100 200 300 400 500 600 700 800 900 1000
dIF/dt(A/µs)
IF<2*IF(av)
VR=400V Tj=125°C
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Page 4
STTA3006CW/CP
Fig. 7: Relative variation of dynamic parameters
versusjunctiontemperature(referenceTj=125°C).
1.1
1.0
S factor
0.9
IRM
0.8
Tj(°C)
0.7 25 50 75 100 125
Fig. 9: Forward recoverytime versus dIF/dt (90% confidence).
tfr(ns)
300
250
VFR=1.1*VF max. IF=IF(av)
Tj=125°C
Fig. 8: Transient peak forward voltage versus dIF/dt(90% confidence).
VFP(V)
25
20
15
10
5
0
IF=IF(av)
dIF/dt(A/µs)
0 100 200 300 400 500 600 700 800 900 1000
Tj=125°C
200
150
100
50
0 100 200 300 400 500 600 700 800 900 1000
dIF/dt(A/µs)
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Page 5
APPLICATIONDATA
STTA3006CW/CP
The TURBOSWITCH is especially designed to provide the lowest overall power losses in any ”FREEWHEEL Mode” application (Fig.A) considering both the diode and the companion
TOTALLOSSES
due to the diode
P = P1+P2+ P3+ P4+ P5 Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
transistor,thus optimizing the overallperformance in the end application. The way of calculating the power losses is given below:
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
Fig.A : ”FREEWHEEL”MODE.
SWITCHING
TRANSIST OR
V
R
t
F=1/T =t/T
IL
DIODE:
TURBOSWITCH
T
LOAD
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Page 6
STTA3006CW/CP
APPLICATIONDATA (Cont’d)
Fig.B: STATICCHARACTERISTICS
I
I
F
Rd
V
R
V
tOVF
I
R
Conduction
P1= V
V
Reverse
losses:
t0.IF(AV)+Rd.IF2(RMS)
losses:
Fig.C:
TURN-OFFCHARACTERISTICS
V
IL
TRANSISTOR
I
I
dI /dt
F
V
I
RM
trr = ta + tb S = tb / ta
tbta
dI /dt
R
DIODE
t
VR
R.IR
losses:
.(1-δ)
P2= V
Turn-on
(inthe transistor,due to the diode)
2
I
×
× (3+2×S) ×
RM
6
xdI
I
×
I
RM
L
x
2
dI
dt
F
× (S+ 2 ) ×
dt
F
F
F
P5 =
+
V
R
V
×
R
Turn-offlosses(in thediode) :
V
t
P3 =
R
2
×
I
×
xdI
F
S×F
dt
RM
6
P3 and P5 are suitable for power MOSFET and IGBT
Fig.C: TURN-ONCHARACTERISTICS
I
F
I
Fmax
6/8
dI /dt
F
0
V
F
V
Fp
1.1V
F
0t
tfr
t
Turn-on
losses:
P4= 0.4(V
V
F
FP-VF
).I
Fmax.tfr
.F
Page 7
PACKAGEDATA
TO-247Plastic
STTA3006CW/CP
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V
A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102
V
Dia.
E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055
F1 3.00 0.118
H
A
F2 2.00 0.078 F3 2.00 2.40 0.078 0.094
L5
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
L
L4L2
F2
F4
F3
L3
L1
D
ME
F1
V2
F(x3)
G
==
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118
Coolingmethod : by conduction(C). Recommendedtorquevalue: 0.8 m.N Maximumtorque value : 1 m.N
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
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Page 8
STTA3006CW/CP
PACKAGEDATA
SOT93Plastic
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.70 4.90 1.185 0.193 C 1.90 2.10 0.075 0.083 D 2.50 0.098
D1 2.00 0.078
E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051
F3 1.75 0.069 F4 2.10 0.083
G 10.80 11.10 0.425 0.437 H 14.70 15.20 0.279 0.598
L 12.20 0.480
L2 16.20 0.638 L3 18.0 0.709 L5 3.95 4.15 0.156 0.163 L6 31.00 1.220
O 4.00 4.10 0.157 0.161
Coolingmethod : by conduction(C). Recommendedtorquevalue: 0.8 m.N Maximumtorque value : 1 m.N
Orderingtype Marking Package Weight Base qty Deliverymode
STTA3006CW STTA3006CW TO247 4.36g 30 Tube
STTA3006CP STTA3006CP SOT93 3.97g 30 Tube
Epoxymeets UL94,V0
Informationfurnished isbelievedto be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use ofsuch informationnor forany infringementof patentsor other rights of third parties which may resultfrom its use. No license isgrantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express writtenap­proval of STMicroelectronics.
The ST logois a registeredtrademark ofSTMicroelectronics
1999 STMicroelectronics - Printed in Italy -All rights reserved.
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