ULTRA-FASTAND SOFTRECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGHFREQUENCYOPERATIONS.
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations
and is particularly suitable and efficient in motor
A1
K
A2
A1
TO-247
STTA3006CW
A2
K
SOT93
STTA3006CP
A1
A2
K
controlfreewheelapplicationsand in boosterdiode
applicationsin power factorcontrolcircuitries.
Packagedeither in TO-247or SOT93,these 600V
devicesare particularly intended for use on 240V
domesticmains.
ABSOLUTE RATINGS
(limitingvalues, per diode)
SymbolParameterValueUnit
V
RRM
V
RSM
I
F(RMS)
I
FRM
I
FSM
T
j
T
stg
TM : TURBOSWITCH is a trademarkof STMicroelectronics
November 1999 Ed: 4B
Repetitivepeak reversevoltage600V
Non repetitivepeak reversevoltage600V
RMSforwardcurrent30A
Repetitivepeak forward currenttp =5 µs F=5kHz square200A
Surgenon repetitiveforwardcurrenttp=10 ms sinusoidal230A
Maximumoperating junctiontemperature150°C
Storagetemperaturerange-65to150°C
1/8
Page 2
STTA3006CW/CP
THERMAL AND POWER DATA
SymbolParameterTest conditionsValueUnit
R
th(j-c)
P
1
Junctionto casePerdiode
Total
Coupling
Conductionpower dissipationPerdiode
= 30A δ=0.5
I
F(AV)
Tc= 110°C
1.9
1.0
0.1
20.5W
°C/W
P
max
STATICELECTRICALCHARACTERISTICS
Totalpower dissipation
Pmax= P1+ P3 (P3= 10% P1)
(perdiode)
Perdiode
Tc=105°C
22.5W
SymbolParameterTestconditionsMinTypMaxUnit
V
I
R**
V
F*
to
Forwardvoltage dropIF=15ATj = 25°C
Tj = 125°C1.3
ReverseleakagecurrentVR=0.8x
V
RRM
ThresholdvoltageIp< 3.I
Tj=25°C
Tj = 125°C2
Tj = 125°C1.06V
AV
1.8
1.6
100
5
rdDynamicresistance177mΩ
Test pulse :* tp = 380 µs, δ <2%
** tp = 5ms,
δ<2%
To evaluatethe maximumconductionlossesuse thefollowingequation :
P=V
toxIF(AV)
DYNAMICELECTRICALCHARACTERISTICS
+rdxI
F2(RMS)
(perdiode)
TURN-OFF SWITCHING
SymbolParameterTestconditionsMinTypMaxUnit
V
V
A
µ
mA
t
rr
Reverse
recoverytime
I
RM
Maximum
reverserecovery
current
S factorSoftnessfactorTj =125°CV
Tj = 25°C
=0.5 AIR= 1AIrr = 0.25A
I
F
I
=1A dIF/dt=-50A/µsVR= 30V
F
Tj = 125°CVR= 400VIF=15A
/dt= -120 A/µs
dI
F
/dt= -500 A/µs17.5
dI
F
=400VIF=15A
R
dI
/dt= -500 A/µs0.5
F
35
65
12.5
TURN-ON SWITCHING
SymbolParameterTest conditionsMinTypMaxUnit
2/8
t
fr
Forward
recoverytime
V
Fp
Peak forward
voltage
Tj =25°C
= 15A,dIF/dt= 120 A/µs
I
F
measuredat, 1.1
VFmax
×
500
Tj =25°C
= 15A,dIF/dt= 120 A/µs9
I
F
ns
A
/
ns
V
Page 3
STTA3006CW/CP
Fig.1:
Conductionlosses versusaverage current.
P1(W)
25
δ = 0.1
δ = 0.2
δ=0.5
20
δ =1
15
10
T
5
0
IF(av)(A)
0 2 4 6 8 1012141618
=tp/Ttp
δ
Fig. 3: Relative variation of thermal transient
impedancejunctiontocaseversus pulseduration.
K
1.0
Zth(j-c) (tp, )δ
K=
0.8
0.6
0.4
0.2
0.0
Rth(j-c)
δ= 0.5
δ =0.2
δ =0.1
Single pulse
tp(s)
T
=tp/Ttp
δ
1E-41E-31E-21E-11E+0
Fig. 2:
Forward voltage drop versus forward
current(maximumvalues).
VFM(V)
200
Tj=125°C
100
10
IFM(A)
1
0.00.51.01.52.02.53.03.54.0
Fig. 4: Peak reverse recovery current versus
dIF/dt(90% confidence).
IRM(A)
45
40
VR=400V
35
Tj=125°C
30
25
20
15
10
5
0
0100 200 300 400 500 600 700 800 900 1000
IF=IF(av)
IF=2*IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
Fig. 5:
Reverserecovery time versus dIF/dt (90%
confidence).
trr(ns)
200
180
160
140
120
100
80
60
IF=0.5*IF(av)
40
20
0
0100 200 300 400 500 600 700 800 900 1000
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/µs)
VR=400V
Tj=125°C
Fig.6:
Softnessfactor(tb/ta) versus dIF/dt (typical
values).
S factor
1.0
0.8
0.6
0.4
0.2
0.0
0100 200 300 400 500 600 700 800 900 1000
dIF/dt(A/µs)
IF<2*IF(av)
VR=400V
Tj=125°C
3/8
Page 4
STTA3006CW/CP
Fig. 7: Relative variation of dynamic parameters
versusjunctiontemperature(referenceTj=125°C).
1.1
1.0
S factor
0.9
IRM
0.8
Tj(°C)
0.7
255075100125
Fig. 9: Forward recoverytime versus dIF/dt (90%
confidence).
tfr(ns)
300
250
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
Fig. 8: Transient peak forward voltage versus
dIF/dt(90% confidence).
VFP(V)
25
20
15
10
5
0
IF=IF(av)
dIF/dt(A/µs)
0100 200 300 400 500 600 700 800 900 1000
Tj=125°C
200
150
100
50
0100 200 300 400 500 600 700 800 900 1000
dIF/dt(A/µs)
4/8
Page 5
APPLICATIONDATA
STTA3006CW/CP
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
”FREEWHEELMode”application(Fig.A)
considering both the diode and the companion
TOTALLOSSES
due to the diode
P = P1+P2+ P3+ P4+ P5Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
transistor,thus optimizing the overallperformance
in the end application.
The way of calculating the power losses is given
below:
Informationfurnished isbelievedto be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of
use ofsuch informationnor forany infringementof patentsor other rights of third parties which may resultfrom its use. No license isgrantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express writtenapproval of STMicroelectronics.
The ST logois a registeredtrademark ofSTMicroelectronics
1999 STMicroelectronics - Printed in Italy -All rights reserved.
STMicroelectronics GROUP OFCOMPANIES
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