Datasheet STTA2512P, STTA5012TV2, STTA5012TV1 Datasheet (SGS Thomson Microelectronics)

STTA2512P



TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

t

(typ) 60ns

rr

(max) 1.9V

V

F

25A

1200V

FEATURESAND BENEFITS

ULTRA-FAST,SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGH FREQUENCY AND/OR HIGH PULSED
CURRENTOPERATION.

HIGHREVERSEVOLTAGECAPABILITY.
LOW INDUCTANCEPACKAGE< 5 nH.
INSULATEDPACKAGE: ISOTOP

Electricalinsulation : 2500V

RMS

TM

Capacitance: < 45pF.

STTA5012TV1/2

K2 A2

K1 A1

STTA5012TV1

ISOTOP

TM

A2

K2K1A1

STTA5012TV2

K

A

K

SOD93

STTA2512P

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in
allhighvoltageoperationswhich requireextremely
fast,soft andnoise-freepower diodes.Due to their
optimizedswitchingperformancesthey also highly
decrease power losses in any associated
switchingIGBT or MOSFET in all freewheelmode

ABSOLUTE RATINGS

(limitingvalues, perdiode)

operations.
They are particularly suitable in Motor Control
circuitries, or in the primaryof SMPS assnubber,
clampingor demagnetizingdiodes. They are also
suitable for secondary of SMPS as high voltage
rectifierdiodes.

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

FRM

I

FSM

T

stg

T

j

ISOTOPand TURBOSWITCH are trademarks of STMicroelectronics.

November 1999 - Ed: 4B

Repetitivepeak reverse voltage 1200 V
RMSforwardcurrent 50 A
Repetitivepeak forward current tp= 5 µsF = 5kHz square 300 A
Surgenon repetitiveforwardcurrent tp= 10ms sinusoidal 210 A
Storagetemperaturerange - 65 to+ 150 °C
Maximumoperatingjunction temperature 150 °C

1/9

STTA2512P / STTA5012TV1/2

THERMAL ANDPOWER DATA (perdiode)

Symbol Parameter Conditions Value Unit

R

th(j-c)

R

th(c)

P

1

P

max

STATICELECTRICAL CHARACTERISTICS (perdiode)

Symbol Parameter Test conditions Min Typ Max Unit

V

F

I

R

V

to

R

d

Test pulses : * tp = 380 µs, δ<2%

Junctionto casethermal
resistance

ISOTOP Perdiode 1.4 °C/W
ISOTOP Total 0.75

SOD93 1.2
Couplingthermalresistance ISOTOP Coupling 0.1 °C/W
Conductionpowerdissipation

I

=25Aδ=0.5

F(AV)

Totalpower dissipation
Pmax= P1 + P3 (P3 = 10% P1)

ISOTOP Tc=70°C57W

SOD93 Tc=82°C

ISOTOP Tc=62°C 62.5 W

SOD93 Tc=75°C

* Forward voltagedrop IF=25A Tj = 25°C

Tj = 125°C 1.3

** Reverseleakage current VR=0.8x

V

RRM

Thresholdvoltage Ip < 3.I

F(AV)

Tj = 25°C
Tj = 125°C 2.0

Tj = 125°C 1.52 V

Dynamicresistance 15 mΩ

δ

** tp = 5 ms ,

<2%

2.1

1.9

150

8

V
V

A

µ

mA

To evaluatethe maximumconductionlossesuse the following equation:
P=V

toxIF(AV)

+RdxI

F2(RMS)

DYNAMICELECTRICALCHARACTERISTICS(perdiode)
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

rr

Reverserecovery
time

I

RM

Maximumreverse
recoverycurrent

S factor Softnessfactor Tj= 125°CV

Tj= 25°C

= 0.5A IR=1A Irr= 0.25A

I

F

I

=1A dIF/dt =-50A/µsVR=30V

F

60

110

Tj= 125°C VR= 600V IF=25A
dI

/dt =-200 A/µs

F

/dt =-500 A/µs45

dI

F

= 600V IF=25A

R

dI

/dt =-500 A/µs 1.2

F

35

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

V

Fp

Forwardrecoverytime Tj = 25°C

=25A, dIF/dt =200 A/µs

I

F

measuredat 1.1×V

Peakforwardvoltage Tj = 25°C

=25A,dIF/dt = 200A/µs

I

F

I

=40A,dIF/dt = 500A/µs

F

max

F

900

30

35

ns

A

/

ns

V

2/9

STTA2512P / STTA5012TV1/2

Fig. 1: Conductionlossesversusaveragecurrent

(perdiode).

P1(W)

60

δ = 0.1

δ = 0.2

δ= 0.5

50
40

δ =1

30
20
10

IF(av) (A)

0

0 5 10 15 20 25 30

T

=tp/T tp

δ

Fig.3-1:Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOTOP).

Zth(j-c)/Rth(j-c)

1.0

Fig. 2: Forward voltage drop versus forward
current (maximumvalues, per diode).

IFM(A)

300

Tj=125°C

100

10

VFM(V)

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Fig. 3-2: Relative variation of thermal impedance
junctionto caseversus pulseduration(SOD93).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

δ = 0.1

0.2

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 5E+0

tp(s)

Fig.4: Peakreverserecoverycurrent versusdIF/dt

(90%confidence,per diode).

IRM(A)

55

VR=600V

50

Tj=125°C

45
40

IF=2*IF(av)

35
30
25
20
15
10

5
0

0 100 200 300 400 500

dIF/dt(A/µs)

IF=IF(av)

IF=0.5*IF(av)

0.8

0.6

δ = 0.5

0.4

δ = 0.2

δ = 0.1

0.2

0.0
1E-4 1E-3 1E-2 1E-1 1E+0

Single pulse

tp(s)

Fig. 5: Reverse recovery time versus dIF/dt (90%

confidence,perdiode).

trr(ns)

500
450
400
350
300
250
200
150
100

50

0

0 100 200 300 400 500

IF=2*IF(av)

IF=IF(av)

IF=0.5*IF(av)

dIF/dt(A/µs)

VR=600V
Tj=125°C

3/9

STTA2512P / STTA5012TV1/2

Fig.6: Softnessfactor(tb/ta) versusdIF/dt (typical

values,per diode).

S factor

1.60

Tj=125°C

1.40

1.20

1.00

0.80
0 100 200 300 400 500

dIF/dt(A/µs)

IF<2*IF(av)
VR=600V

Fig. 8: Transient peak forward voltage versus
dI

/dt (90%confidence,per diode).

F

VFP(V)

60

IF=IF(av)

50
40
30
20
10

0

0 100 200 300 400 500

dIF/dt(A/µs)

Tj=125°C

Fig. 7: Relative variation of dynamic parameters
versusjunctiontemperature(reference Tj=125°C).

1.1

1.0

0.9

0.8

0.7
25 50 75 100 125

S factor

IRM

Tj(°C)

Fig. 9: Forward recovery time versus dIF/dt (90%

confidence,per diode).

tfr(ns)

1400
1200
1000

800
600
400
200

0 100 200 300 400 500

VFR=1.1*VF max.
IF=IF(av)

dIF/dt(A/µs)

Tj=125°C

4/9

APPLICATIONDATA

The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequencyor high pulsed current
operations. In such applications (Fig A to D),the
wayof calculatingthe powerlossesisgivenbelow:

TOTALLOSSES

due tothe diode

P = P1+ P2+ P3+ P4+ P5 Watts

STTA2512P / STTA5012TV1/2

CONDUCTION

LOSSES

in thediode

Fig.A : ”FREEWHEEL”MODE.

SWITCHING

TRANSISTOR

V

R

tp

REVERSE

LOSSES

in thediode

T

SWITCHING

LOSSES

in thediode

DIODE:

TURBOSWITCH

SWITCHING

LOSSES

in thetansistor

due to thediode

IL

F=1/T δ= tp/T

LOAD

5/9

STTA2512P / STTA5012TV1/2

Fig. B : SNUBBERDIODE. Fig. C : DEMAGNETIZINGDIODE.

PWM

tp

T

F=1/T δ= tp/T

Fig.D : RECTIFIERDIODE.

STATIC& DYNAMICCHARACTERISTICS . POWERLOSSES .
Fig. E: STATICCHARACTERISTICS

6/9

I

I

F

Rd

V

R

V

to

V

F

V

I

R

Conductionlosses:

P1 = V

to.IF(AV)+Rd.IF2(RMS)

Max values at 125°C,suitablefor Ipeak< 3.IF(av)

Reverse losses:
P2 = V

R.IR

.(1-δ)

APPLICATIONDATA (Cont’d)

Fig.F: TURN-OFFCHARACTERISTICS

STTA2512P / STTA5012TV1/2

V

I

I

dI /dt

V

I

RM

I

V

trr = ta + tb

S = tb/ta

TRANSISTOR

F

DIODE

tbta

dI /dt

R

trr = ta + tb S = tb / ta

dIF/dt = VR/L

RECTIFIER

OPERATION

tbta

dI /dt

I

RM

R

IL

t

VR

V

Turn-onlosses:

(inthe transistor,due to the diode)

2

×

I

I

RM

RM

× ( 3 + 2 ×

6

xdI

I

×

× (S+2) ×

L

2

x

dI

F

F

dt

⁄

S)×F

dt

⁄

F

P5=

+

V

R

V

×

R

Turn-offlosses(in the diode):

2

I

×

RM

6

xdI

×

⁄

F

S×F

dt

t

P3=

V

R

Turn-offlosses:
(withnon negligibleserial inductance)

2

I

V

t

R

P3’=

×

R

RM

6

xdI

×

I

L

RM

S×F

×

dt

⁄

F

2

F

×

+

2

P3,P3’and P5aresuitableforpowerMOSFETand
IGBT

Fig. G: TURN-ONCHARACTERISTICS

I

F

I

dI /dt

F

0

V

F

V

Fp

1.1V

F

0t

tfr

Fmax

t

Turn-onlosses:

P4= 0.4 (V

V

F

FP-VF

).I

Fmax.tfr

.F

7/9

STTA2512P / STTA5012TV1/2

PACKAGEMECHANICALDATA

ISOTOP

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976typ.

G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

8/9

PACKAGEMECHANICALDATA

SOD93

STTA2512P / STTA5012TV1/2

DIMENSIONS

REF.

A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098

D1 1.27 0.050

E 0.50 0.78 0.020 0.031

F 1.10 1.30 0.043 0.051

F3 1.75 0.069

G 10.80 11.10 0.425 0.437
H 14.70 15.20 0.578 0.598

L 12.20 0.480
L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220

O 4.00 4.10 0.157 0.161

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Orderingtype Marking Package Weight Base qty Deliverymode

STTA5012TV1 STTA5012TV1 ISOTOP 27g.
STTA5012TV2 STTA5012TV2 ISOTOP 10 Tube

withoutscrews

10 Tube

STTA2512P STTA2512P SOD93 3.79g. 30 Tube

Coolingmethod:by conduction(C)
ISOTOP recommended torque value: 1.3 N.m. (MAX 1.5 N.m.) for the 6 x M4 screws. (2 x M4 screws

recommendedfor mountingthe packageon theheatsink andthe 4 screwsfor terminals).

ISOTOP:the screwssupplied with the package are suitable for mountingon a board witha thickness of

0.6 mmmin and 2.2mm max.
EpoxymeetsUL94,V0

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all informationpreviously supplied.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.

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