Datasheet STTA212S Datasheet (SGS Thomson Microelectronics)



STTA212S

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

t

(typ) 65ns

rr

(max) 1.5V

V

F

2A

1200V

FEATURESAND BENEFITS

SPECIFIC TO THE FO L LOW ING OPERAT IO N S:
SNUBBING OR CLAMPING, DEMAGHETIZATION
ANDRECTI FICATIO N

ULTRA-FASTANDSOFTRECOVERY
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR

HIGHFREQUENCY OPERATION
HIGHREVERSEVOLTAGECAPABILITY

DESCRIPTION

SMC

TURBOSWITCH 1200V drastically cuts losses in
all highvoltageoperationswhichrequireextremely
fast, soft and noise-freepower diodes.
Due to their optimized switching performances
they aloso highly decrease power losses in any
associated switching IGBT or MOSFET in all

suitableand efficient in motorcontrol circuitries, or
in primary of SMPS as snubber, clamping or
demagnetizingdiodes secondaryof SMPSas high
voltage rectifier diodes.They are also suitable for
the secondary of SMPS as high voltage rectifier
diodes.

”freewheel mode” operations and is particulary

ABSOLUTE RATINGS

(limitingvalues)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

I

FSM

T

stg

T

j

TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed:4A

Repetitivepeakreversevoltage 1200 V
Nonrepetitivepeak reversevoltage 1200 V
RMSforwardcurrent 10 A
Repetitivepeakforwardcurrent tp = 5µsF=5kHzsquare 20 A
Surgenon repetitiveforwardcurrent tp = 10mssinusoidal 25 A
Storagetemperaturerange - 65 to + 150 °C
Maximumoperatingjunction temperature 125 °C

1/8

STTA212S

THERMAL ANDPOWERDATA

Symbol Parameter Test conditions Value Unit

R

th(j-I)

P

1

Junctionto leadthermalresistance 21 °C/W
Conductionpowerdissipation I

= 1.5A δ = 0.5

F(AV)

2.5 W

Tlead=72°C

P

max

Totalpower dissipation

Tlead=67°C 2.8 W

Pmax= P1+ P3 (P3= 10% P1)

STATICELECTRICAL CHARACTERISTICS

Symbol Parameter Test Conditions Min Typ Max Unit

V

F*

I

R**

Forwardvoltagedrop IF=2A Tj=25°C

Reverseleakagecurrent VR=0.8

xV

RRM

Vto Thresholdvoltage Ip< 3.I

Tj =125°C 1.1
Tj =25°C

Tj =125°C 15020400
Tj =125°C 1.15 V

AV

1.65

1.5

rd Dynamicresistance 175 mΩ

Test pulses : * tp = 380µs,

** tp= 5 ms ,δ<2%

δ

<2%

Toevaluate the maximum conductionlossesuse the following equation :
P=V

toxIF(AV)

+rdxI

F2(RMS)

V

A

µ

DYNAMICELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

rr

I

RM

S factor Softnessfactor Tj = 125°CV

Reverserecovery
time

Maximumrecovery
current

Tj = 25°C

=0.5 A IR= 1A Irr= 0.25A

I

F

I

=1A dIF/dt=-50A/µsVR= 30V

F

65

115

Tj = 125°CVR= 600V IF=2A

/dt= -16 A/µs

dI

F

/dt= -50 A/µs 6.0

dI

F

=600V IF=2A

R

dI

/dt= -50 A/µs 0.9 /

F

3.6

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

V

Fp

Forwardrecoverytime Tj=25°C

=2A

I

Peakforwardvoltage 35 V

F

dI

/dt = 16 A/µs

F

measuredat1.1×V

max

F

900 ns

ns

A

2/8

STTA212S

Fig.1: Conductionlosses versusaveragecurrent.

P1(W)

3.0

δ=0.1

δ=0.2

δ=0.5

δ=1

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

IF(av) (A)

Fig. 3: Variationof thermal impedance junctionto

ambient versus pulse duration (epoxy printed cir­cuitboardFR4, e(Cu)=35µm,S(Cu)=1cm2).

Zth(j-a)(°C/W)

100

Fig. 2: Forward voltage drop versus forward
current (maximum values).

IFM(A)

5E+1

1E+1

Tj=125°C

1E+0

1E-1

VFM(V)

1E-2

012345

Fig.4: Peakreverserecoverycurrent versusdIF/dt
(90%confidence).

IRM(A)

20

VR=600V
Tj=125°C

15

IF=2*IF(av)

10

tp(s)

1

1E-2 5E+2

1E-1 1E+0 1E+1 1E+2

Fig. 5: Softnessfactor (tb/ta)versusdIF/dt (typical
values).

S factor

1.20

IF<2*IF(av)

1.00

0.80

0.60
0 20 40 60 80 100 120 140 160 180 200

VR=600V
Tj=125°C

dIF/dt(A/µs)

10

5

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

IF=IF(av)

Fig. 6: Reverse recoverytime versus dIF/dt (90%
confidence).

trr(ns)

400
350
300
250
200
150
100

50

0

0 20 40 60 80 100 120 140 160 180 200

IF=2*IF(av)

IF=IF(av)

dIF/dt(A/µs)

VR=600V
Tj=125°C

3/8

STTA212S

Fig. 7: Relative variation of dynamic parameters

versusjunctiontemperature(referenceTj=125°C).

1.1

1.0

S factor

0.9

IRM

0.8

Tj(°C)

0.7

25 50 75 100 125

Fig.9: Forwardrecovery timeversusdIF/dt.

tfr(ns)

800
700

VFR=1.1*VF max.
IF=IF(av)

Tj=125°C

Fig. 8: Transient peak forward voltage versus

/dt.

dI

F

VFP(V)

60
50
40
30
20
10

0

0 20406080100

IF=IF(av)

dIF/dt(A/µs)

Tj=125°C

600
500
400
300
200

0 20406080100

dIF/dt(A/µs)

4/8

APPLICATIONDATA

STTA212S

The 1200V TURBOSWITCH has been designed
toprovidethe lowest overallpowerlossesin anyall
highfrequencyor highpulsedcurrentoperations.

TOTALLOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

CONDUCTION

LOSSES

in the diode

REVERSE

LOSSES

in thediode

In such applications (fig. A to D), the way of
calculatingthepowerlossesis givenbelow:

SWITCHING

LOSSES

in thediode

SWITCHING

LOSSES

in the transistor

due tothe diode

Fig.A : ”FREEWHEEL”MODE

SWITCHING

TRANSISTOR

V

R

F=1/T =t/T

IL

DIODE:

TURBOSWITCH

t

T

LOAD

5/8

STTA212S

APPLICATIONDATA (Cont’d)
Fig. B : SNUBBERDIODE. Fig. C : DEMAGNETIZINGDIODE.

PWM

t

T

F = 1/T = t/T

Fig.D : RECTIFIERDIODE.

Fig.E : STATICCHARACTERISTICS

I

I

F

Rd

V

R

V

tOVF

I

R

6/8

Conductionlosses :
P1 = V

t0xIF(AV)+RdxIF2(RMS)

Reverse losses:
P2 = V

RxIR x (1 -

V

)

δ

APPLICATIONDATA (Cont’d)
Fig.F : TURN-OFFCHARACTERISTICS

STTA212S

V

Turn-onlosses:

(inthe transistor,duetothediode)

IL

V

TRANSISTOR

I

t

P5=

+

R

V

×

R

2

×

I

×(3 + 2×S)×

RM

6

x

I

×

I

RM

L

2

dI

×

dI

dt

⁄

F

× (S+ 2) ×

dt

⁄

F

F

F

I

dI /dt

F

DIODE

Turn-offlosses (inthediode) :

V

I

RM

I

tbta

dI /dt

R

trr = ta + tb S = tb / ta

dIF/dt = VR/L

RECTIFIER

OPERATION

VR

t

P3 =

V

R

2

I

×

6

RM

xdI

×S×

F

F

⁄

dt

V

I

trr = ta + tb

S = tb/ta

RM

tbta

dI /dt

R

Fig. G : TURN-ONCHARACTERISTICS

I

F

I

dI /dt

F

0

V

F

V

Fp

1.1V

F

0t

tfr

Fmax

t

V

R

withnon negligibleserial inductance

P3’ =

P3, P3’ and P5 are suitable for power MOSFET
andIGBT

Turn-onlosses:

Turn-offlosses:

t

V

F

P4= 0.4 (V

V

×

R

6

FP-VF

I

RM

xdI

)xI

2

×

S×F

dt

⁄

F

Fmaxxtfr

+

xF

L×I

RM

2

2

×

F

7/8

STTA212S

PACKAGEMECHANICAL DATA

SMC

E1

D

E

A1

C

E2

L

A2

FOOTPRINTDIMENSIONS(in millimeters)

SMCPlastic

3.3

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 2.90 3.2 0.114 0.126
c 0.15 0.41 0.006 0.016

E 7.75 8.15 0.305 0.321
E1 6.60 7.15 0.260 0.281
E2 4.40 4.70 0.173 0.185

D 5.55 6.25 0.218 0.246

b

L 0.75 1.60 0.030 0.063

2.0 4.2 2.0

Orderingtype Marking Package Weight Base qty Deliverymode

STTA212S T53 SMC 0.243g 2500 Tape& reel

EpoxymeetsUL94,V0
Bandindicatescathode

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publicationare subject to
change without notice.This publicationsupersedes and replacesall informationpreviously supplied.
STMicroelectronics products are not authorized for use as criticalcomponentsin lifesupport devices or systems without express writtenap­proval of STMicroelectronics.

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 1999 STMicroelectronics - Printed in Italy - Allrights reserved.

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