Datasheet STTA206S Datasheet (SGS Thomson Microelectronics)

®

STTA206S

TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE

MAIN PRODUCTS CHARACTE RISTICS

I

F(AV)

V

RRM

(typ) 20ns

t

rr

V

(max) 1.5V

F

2A

600V

FEATURES AND BENEFITS

SPECIFIC TO "FREEWHEEL MODE" OPERA­TIONS : FREEWHEEL OR BOOSTER DIODE

ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR

HIGH FREQUENCY OPERATIONS
SURFACE M OUNT DE V ICE

DESCRIPTION

The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH "A" family drastically cuts losses
in both the diode and the associated switching
IGBT or MOSFET in all "Freewheel Mode"
operations and is particulary s uitable and efficient

AK

SMC

in Motor Control Freewheel applications and in
Booster diode applications in Power Factor Control
circuitries.

Packaged in SMC surface mount envelope, these
600V devices are particularly intended for use on
240V domestic mains.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

T

j

T

stg

TM : TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed: 2D

Repetitive peak reverse voltage 600 V
Non repetitive peak reverse voltage 600 V
RMS forward current 8 A
Repetitive peak forward current (tp = 5 µs, f = 5kHz) 50 A
Maximum operating junction temperature 125 ° C
Storage temperature range - 65 to + 150 ° C

1/8

STTA206S

THERMAL AND P OW ER DATA

Symbol Parameter Conditions Value Unit

R

P

th(j-I)

P

1

max

Junction to lead 21 °C/ W
Conduction power dissipation

(see fig. 2)
Total power dissipation

I

= 1.5A δ = 0.5

F(AV)

2.5 W

Tlead= 72°C
Tlead= 67°C 2.8 W

Pmax = P1 + P3 (P3 = 10% P1)

STATIC ELECTRICAL CHARACTE RISTICS (see Fig. 2)

Symbol Parameter Test Conditions Min Typ Max Unit

V

F *

I

R **

Test pulses widths : * tp = 380 µs, duty cy cle < 2%

Forward voltage drop IF = 2A Tj = 25°C

Reve rse le akag e curre nt VR = 0.8

** tp = 5 ms , duty cycle < 2%

x V

RRM

Tj = 125°C 1.1
Tj = 25°C

Tj = 125°C 400201200

1.75

1.5

DYNAMIC ELECTRICAL CHARACTE RISTICS
TURN-OFF SWITCHING (see Fig. 3)

Symbol Parameter Test Conditions Min Typ Max Unit

V

A

µ

t

rr

Reverse
recover y time

I

RM

Maximum
recover y curre nt

S factor Softness factor Tj = 125° C V

Tj = 25°C
I

= 0.5 A IR = 1A Irr = 0.25A

F

I

= 1 A dIF/dt =-50A/µs VR = 30V

F

20

50

Tj = 125°C VR = 400V IF = 2A
dI

/dt = -16 A/µs

F

dI

/dt = -50 A/µs2.0

F

= 400V IF = 2A

R

dI

/dt = -50 A/µsTBD-

F

1.2

TURN-ON SWITCHING (see Fig.8)

Symbol Parameter Test Conditions Min Typ Max Unit

t

fr

Forward
recove ry time

V

Fp

Peak forward

Tj = 25°C
I

= 1 A

F

dI

/dt = 8 A/µs

F

measured at, 1.1

VF max

×

500 ns

10 V

voltage

ns

A

2/8

APPLICATION DA TA

The TURBOSWITCH

TM

"A" is especially
designed to provide the lowest overall power
losses in any "Freewheel Mode" application (see
fig. 1) considering both the diode and the
companion transistor, thus optimizing the overall
performance in the end application.

TOTAL LOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

STTA206S

The way of calculating the power losses is given
below :

Fig. 1 :

CONDUCTION

LOSSES

in the diode

P1 Watts

(Fig . 2)

"FREEWHEEL" MODE

SWITCHING

TRANSISTOR

V

R

REVERSE

LOSSES

in the diode

P2 Watt s

(Fig. 2)

t

T

SWITCHING

LOSSES

in the diode

OFF : P3 Watts

ON : P4 W atts

(Fig. 3 & 4)

DIODE:

TURBOSWITCH "A"

SWITCHING

LOSSES

in the transistor

due to the diode

P2 Watts

(Fig . 3)

IL

F=1/T =t/T

LOAD

3/8

STTA206S

APPLICATION DATA (Cont’d)

Fig. 2 :

Fig. 3 :

STATIC CHARACTERISTICS

I

I

F

Rd

V

R

V

tOVF

I

R

TURN-OFF CHARACTERISTI CS

V

TRANSISTOR

I

IL

t0

x I

losses :

F(AV)

+ Rd x I

F2(RMS)

Conduction

P1 = V

with

Vt0 = 1.15 V

R

= 0.175 Ohm

d

V

Reverse

P2 = V

R

Turn-on

(Max values at 125°C)

losses :

x I

R x (1 -

)

δ

losses :

(in the transistor, due to the diode)

I

I

RM

RM

2 ×

2

× (3 + 2 ×

6

dI

x

F

×

×

I

(

L

dI

⁄

F

dt

⁄

+ 2) ×

S

dt

×

V

+

R

×

V

R

P5 =

t

F

S

)

×

F

I

dI /dt

V

I

RM

I

V

I

trr = ta + tb

S=tb/ta

F

DIODE

tbta

dI /dt

R

trr = ta + tb S = tb / ta

dIF/dt = VR/L

tbta

RM

dI /dt

RECTIFIER

OPERATION

R

VR

V

t

Turn-off

t

R

losses (in the diode) :

P3 =

×

V

R

I

RM

6 x

2

× S ×

dI

F

F

dt

⁄

P3 and P5 are suitable for power MOSFET and
IGBT

4/8

APPLICATION DA TA ( Co nt’d)

STTA206S

Fig. 4 :

TURN-ON CHARACTERIST ICS

I

F

I

dI /dt

F

0

V

F

V

Fp

1.1V

F

0t

tfr

Fmax

t

V

F

Ratings and characteristics curves are ON
GOING.

Conduction losses versus average current.

Fig. 5:

P1(W)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

δ = 0.05

δ = 0.1

IF(av) (A)

δ = 0.2

δ = 0.5

δ = 1

Turn-on

P4

Fig. 6:

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

losses :

= 0.4 (VFP - VF) x I

Fmax

x t

x F

fr

Switching OFF losses versus dIF/dt.

P3(W)

Tj=125°C
F=20KHz
VR=400V

dIF/dt(A/us)

0 20 40 60 80 100 120 140 160 180 200

IL=4A

IL=2A

Switching ON los ses v ers us dIF/dt.

Fig. 7:

P4(W)

0.2
Tj=125°C F=100KHz IF=IF(AV)

0.15

0.1

0.05

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/us)

Switching losses in t ransistor d ue to the diode.

Fig. 8:

P5(W)

5.0

Tj=125°C F=20KHz VR=400V

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/us)

IL=4A

IL=2A

5/8

STTA206S

Fig. 9:

Forward voltage drop versus forward

current (maximum values).

IFM(A)

5E+1

1E+1

1E+0

Tj=125°C

Tj=25°C

1E-1

VFM(V)

1E-2

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Fig. 11:

Peak reverse recovery current versus

dIF/dt (90% confidence).

IRM(A)

10

9

VR=400V
Tj=125°C

8
7
6
5
4
3
2
1
0

0 50 100 150 200

dIF/dt(A/µs)

IF=2*IF(av)

IF=IF(av)

Fig. 10:

Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout).

Zth(j-a) (°C/W)

1E+0

δ = 0.5

δ = 0.2

δ = 0.1

1E-1

Single pulse

tp(s)

1E-2

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 12:

Reverse reco very time versus dI F/dt (90%

δ

=tp/T

T

tp

confidence).

trr(ns)

300
250
200
150
100

IF=2*IF(av)

50

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

IF=IF(av)

VR=400V
Tj=125°C

Fig. 13:

Softness factor (tb/ta) versus dIF/dt

(typical values).

S factor

1.8

1.6

1.4

1.2

1.0

0.8

0.6
0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

6/8

IF<2*IF(av)

VR=400V
Tj=125°C

Fig. 14:

Relative variation of dynamic parameters

vers us junc tio n tem per at ure (re fere nce Tj=125°C).

1.1

1.0

0.9

0.8

0.7
25 50 75 100 125

S factor

IRM

Tj(°C)

STTA206S

Fig. 15:

Transient peak forward voltage versus

dIF/dt (90% confidence).

VFP(V)

22

IF=IF(av)

20

Tj=125°C

18
16
14
12
10

8
6
4
2
0

0 20 40 60 80 100 120 140 160 180 200

Fig. 17:

Junction capacitance versus reverse

dIF/dt(A/µs)

voltage applied (typical values).

C(pF)

10

5

F=1MHz

Fig. 16:

Forward recovery time versus dI F/dt (90%

confidence).

tfr(ns)

300
250
200
150
100

50

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

IF=IF(av)

Vfr=1.1*VFmax

Tj=125°C

2

VR(V)

1

1 10 100 200

7/8

STTA206S

PACKAGE ME CHANICAL D AT A

SMC

E1

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

E

C

E2

L

FOOTPRINT DIMENSIONS

D

A1

A2

(in millimeters)

3.3

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 2.90 3.2 0.114 0.126
c 0.15 0.41 0.006 0.016

E 7.75 8.15 0.305 0.321
E1 6.60 7.15 0.260 0.281
E2 4.40 4.70 0.173 0.185

b

D 5.55 6.25 0.218 0.246

2.0 4.2 2.0

Type Marking Package Weight Base qty Delivery mode

STTA206S T51 SMC 0.243g 2500 Tape & Reel

Band indicates cathode
Epoxy meets UL94, V0

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change without notice. This publication supersedes and replaces all information previously supplied.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.

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