TURBOSWITCH, family, drastically cuts losses in
boththe diodeand the associatedswitching IGBT
or MOSFET in all ”freewheel mode” operations
Packaged in TO-220AC, isolated TO-220AC and
2
PAK, these 600V devices are particularly
D
intendedfor use on 240V domesticmains.
and is particularly suitable and efficient in motor
controlfreewheelapplicationsandinboosterdiode
applicationsin powerfactorcontrol circuitries.
ABSOLUTE RATINGS
(limitingvalues)
SymbolParameterValueUnit
V
RRM
V
RSM
I
F(RMS)
Repetitivepeak reversevoltage600V
Non repetitivepeak reversevoltage600V
RMSforward currentTO-220AC/ D2PAK30A
TO-220ACins.20A
I
FRM
Repetitivepeak
forwardcurrent
I
FSM
T
T
stg
TM : TURBOSWITCH is a trademarkof STMicroelectronics
Fig. 3: Relative variation of thermal transient
impedancejunction to caseversus pulseduration.
K
1
Zth(j-c) (tp. )
Rth(j-c)
δ
Single pulse
tp(s)
δ
=tp/T
T
tp
K=
0.8
0.6
δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
0
1.0E-041.0E-031.0E-021.0E-011.0E+00
Fig. 2: Forward voltage drop versus forward
current.
VFM(V)
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.1110100 200
MAXIMUMVALUES
Tj=125°C
IFM(A)
Fig. 4: Peak reverse recovery current versus
/dt.
dI
F
IRM(A)
40.0
37.5
35.0
32.5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
90% CONFIDENCE Tj=12° C
VR=400V
IF=24A
IF=12A
IF=6A
dIF/dt(A/µs)
0100 200 300 400 500 600 700 800 900 1000
Fig.5: Reverserecoverytime versusdIF/dt.
trr(ns)
220
200
180
160
140
120
IF=24A
100
80
60
40
IF=6A
20
0
0100 200 300 400 500 600 700 800 900 1000
90% CONFIDEN CE Tj=125°C
VR=400V
IF=12A
dIF/dt(A/µs)
Fig. 6: Softnessfactor (tb/ta)versus dIF/dt.
S factor
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0100 200 300 400 500 600 700 800 900 1000
Typicalvalues Tj=125°C
IF<2xIF(av)
VR=400V
dIF/dt(A/µs)
3/9
Page 4
STTA1206D/DI/G
Fig. 7: Relative variation of dynamic parameters
versusjunctiontemperature(ReferenceTj=125°C).
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0255075100125150
S factor
IRM
Tj(°C)
Fig.9: Forwardrecoverytime versusdIF/dt.
tfr(ns)
500
450
400
350
300
250
200
150
100
50
0
0255075 100 125 150 175 200 225 250
90% CONFIDENCE Tj=125°C
VFr=1.1*VF max.
IF=IF(av)
dIF/dt(A/µs)
Fig. 8: Transient peak forward voltage versus
/dt.
dI
F
VFP(V)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
90% CONFIDENCE Tj=125°C
IF=IF(av)
dIF/dt(A/µs)
0255075100 125 150 175 200 225 250
4/9
Page 5
APPLICATIONDATA
STTA1206D/DI/G
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
”FREEWHEELMode”application(Fig.A)
considering both the diode and the companion
TOTALLOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
transistor,thusoptimizingthe overall performance
in the end application.
The way of calculating the power losses is given
below:
Informationfurnished is believedto be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use ofsuch information nor for any infringementof patents or otherrights of third parties which mayresult fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval ofSTMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999STMicroelectronics - Printed in Italy- All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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