Datasheet STTA6006P, STTA12006TV1, STTA12006TV2 Datasheet (SGS Thomson Microelectronics)

STTA6006P



TURBOSWITCH



ULTRA-FASTHIGH VOLTAGE DIODE

MAINPRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

(typ) 45ns

t

rr

(max) 1.5V

V

F

60A/ 2 x 60A

600V

FEATURESAND BENEFITS

SPECIFICTO”FREEW HEELMODE”OPERATIONS:
FREEWHEELORBOOSTERDIODE.

ULTRA-FASTRECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGHFREQUENCY OPERATIONS.
INSULATEDPACKAGE: ISOTOP

Electricalinsulation: 2500V

RMS

Capacitance< 45 pF

STTA12006TV1/2

K2 A2

A1K1

STTA12006TV1

ISOTOP

TM

A2A1K1

K2

STTA12006TV2

K

A

K

SOD93

STTA6006P

DESCRIPTION

The TURBOSWITCH is a very high performance
series of ultra-fast high voltagepowerdiodes from
600Vto1200V.
TURBOSWITCH family, drastically cuts losses in
boththe diodeand the associatedswitchingIGBT

controlfreewheelapplicationsand in boosterdiode
applicationsin power factorcontrol circuitries.
Packagedeitherin ISOTOPor SOD93these600V
devicesare particularly intended for use on 240V

domesticmains.
or MOSFET in all ”freewheel mode” operations
and is particularly suitable and efficient in motor

ABSOLUTE RATINGS

(limitingvalues,per diode)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

Repetitivepeak reversevoltage 600 V
Non repetitivepeak reverse voltage 600 V
RMSforwardcurrent SOD93 80 A

ISOTOP 150 A

I

FRM

I

FSM

T

T

stg

TM : TURBOSWITCH is a trademarkof STMicroelectronics

Repetitivepeak forward current tp=5µs F=5kHzsquare 450 A
Surgenon repetitiveforwardcurrent tp=10ms sinusoidal 500 A
Maximumoperatingjunctiontemperature 150 °C

j

Storagetemperaturerange -65to150 °C

November 1999 - Ed: 4C

1/8

STTA12006TV1/2 / STTA6006P

THERMAL AND POWER DATA(Per diode)

Symbol Parameter Test conditions Value Unit

R

th(j-c)

P

1

P

max

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Testconditions Min Typ Max Unit

Junctionto casethermal resistance Per diode 0.85 °C/W

Total 0.47
Coupling 0.1

Conductionpower dissipation

=60A δ =0.5

I

F(AV)

Totalpowerdissipation
Pmax= P1 + P3 (P3= 10% P1)

SOD93 Tc= 64°C 108 W
ISOTOP Tc= 58°C
SOD93 Tc=54°C 120 W
ISOTOP Tc=48°C

V

F*

I

R**

V

Forwardvoltage drop IF=60A Tj= 25°C

Tj = 125°C 1.25

Reverseleakage current VR=0.8x

V

RRM

to

Thresholdvoltage Ip < 3.I

Tj=25°C
Tj = 125°C5

Tj = 125°C 1.14 V

AV

1.75

1.5

200

12

rd Dynamicresistance 6 mΩ

Test pulses : * tp = 380µs,δ<2%

** tp = 5 ms, δ <2%

To evaluatethe maximumconductionlossesuse the followingequation:
P=V

toxIF(AV)

+rdxI

F2(RMS)

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

rr

I

RM

S factor Softnessfactor Tj = 125°CV

Reverserecovery
time

Maximumreverse
recoverycurrent

Tj = 25°C

=0.5A IR= 1A Irr =0.25A

I

F

=1A dIF/dt=-50A/µsVR=30V

I

F

45

80

Tj = 125°C VR =400V IF=60A
dI

/dt= -480A/µs

F

/dt= -500A/µs24

dI

F

= 400V IF=60A

R

/dt= -500A/µs 0.37

dI

F

38

V
V

µA

mA

ns

A

/

TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

2/8

t

fr

V

Fp

Forwardrecovery
time

Tj=25°C

=60A, dIF/dt= 480 A/µs

I

F

measuredat, 1.1

Peakforwardvoltage Tj=25°C

=60A,dIF/dt = 480 A/µs14

I

F

× V

max

F

700

ns

V

STTA12006TV1/2 / STTA6006P

Fig.1: Conductionlossesversus average current.

P1(W)

120

100

80

60

40

20

0

0 5 10 15 20 25 30 35 40 45 50 55 60

=tp/T

T

tp

=0.1

IF(av)(A)

=0.2

=1

=0.5

Fig. 3: Relative variation of thermal transient

impedancejunctionto case versuspulse duration.

Fig. 2: Forward voltage drop versus forward

current.

VFM(V)

3.50

3.00

2.50

2.00

1.50

1.00

0.50

0.00

Fig. 4:

dI

55

50

45

40

35

30

25

20

15

10

MAXIMUM VALUES

o

Tj=125 C

IFM(A)

1 10 100 1000

Peak reverse recovery current versus

/dt.

F

IRM(A)

90% CONFIDENCE Tj=125 C

VR=400V

5
0

0 100 200 300 400 500 600 700 800 9001000

o

IF=1 20A

IF=60A

IF=30A

dIF/dt(A/ s)

Fig.5:

350
325
300

Reverserecoverytime versusdI

trr (ns)

90% CONFIDENCE Tj=125 C

/dt.

F

VR=400V

275
250
225
200
175
150

IF=30A

IF=1 20A

IF=60A

125
100

75
50

0 100 200 300 400 500 600 700 800 9001000

dIF/dt(A/ s)

Fig. 6:

Softnessfactor (tb/ta)versus dI

F

/dt.

S factor

o

0.80

0.75

0.70

0.65

Typical values Tj=125 C

IF<2xIF(av)

VR=400V

o

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20
0 100 200 300 400 500 600 700 800 900 1000

dIF/dt(A/ s)

3/8

STTA12006TV1/2 / STTA6006P

Fig. 7: Relative variation of dynamic parameters

versusjunctiontemperature(referenceTj=125°C).

4.0

3.8

3.5

3.3

3.0

2.8

2.5

2.3

S factor

2.0

1.8

1.5

1.3

1.0

0.8

0.5
0 25 50 75 100 125 150

IRM

Tj(oC)

Fig.9: Forwardrecovery time versusdIF/dt.

tfr(ns)

1000

900
800

90% CONFIDENCE Tj=125 C

VFr=1.1*VF max.

IF=IF(av)

700
600
500
400
300
200
100

0

0 200 400 600 800 1000 1200

dIF/dt(A/ s)

o

Fig. 8: Transient peak forward voltage versus

dI

/dt.

F

VFP(V)

25.0

90% CONFIDENCE Tj=125 C

22.5

IF=IF(av)

20.0

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0.0
0 200 400 600 800 1000 1200

dIF/dt(A/ s)

o

4/8

APPLICATIONDATA

STTA12006TV1/2 / STTA6006P

The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
”FREEWHEEL Mode” application (Fig.A)
considering both the diode and the companion

TOTALLOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

CONDUCTION

LOSSES

in the diode

REVERSE

LOSSES

in the diode

transistor,thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:

SWITCHING

LOSSES

in the diode

SWITCHING

LOSSES

in the tansistor

due to thediode

Fig.A : ”FREEWHEEL”MODE.

SWITCHING

TRANSISTOR

V

R

t

F=1/T =t/T

IL

DIODE:

TURBOSWITCH

T

LOAD

5/8

STTA12006TV1/2 / STTA6006P

APPLICATIONDATA (Cont’d)

Fig.B: STATICCHARACTERISTICS

I

I

F

Rd

V

R

V

tOVF

I

R

Conduction

P1= V

V

losses:

t0.IF(AV)+Rd.IF2(RMS)

Reverse losses:

Fig.C:

TURN-OFFCHARACTERISTICS

V

IL

TRANSISTOR

I

I

dI /dt

F

V

I

RM

trr = ta + tb S = tb / ta

tbta

dI /dt

R

DIODE

t

Fig.D: TURN-ONCHARACTERISTICS

VR

R.IR

losses:

.(1-δ)

P2= V

Turn-on

(inthe transistor,due to the diode)

2

×

I

× ( 3 + 2 ×S) ×

RM

6

xdI

I

×

I

RM

L

x

2

dI

⁄

dt

F

× (S+ 2 ) ×

⁄

dt

F

F

F

P5 =

+

V

R

V

×

R

Turn-offlosses(in thediode):

V

t

P3 =

R

2

×

I

×

xdI

⁄

F

S×F

dt

RM

6

P3 and P5 are suitable for power MOSFET and
IGBT

6/8

I

F

I

dI /dt

F

0

V

F

V

Fp

1.1V

F

0t

tfr

Fmax

t

Turn-on

P4= 0.4(V

V

F

losses:

FP-VF

).I

Fmax.tfr

.F

PACKAGEMECHANICAL DATA

SOD93

STTA12006TV1/2 / STTA6006P

DIMENSIONS

REF.

A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098

D1 1.27 0.050

E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051

F3 1.75 0.069

G 10.80 11.10 0.425 0.437

H 14.70 15.20 0.578 0.598

L 12.20 0.480
L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220

O 4.00 4.10 0.157 0.161

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Coolingmethod : byconduction(C)
Recommendedtorquevalue: 0.8 m.N
Maximumtorque value : 1m.N

7/8

STTA12006TV1/2 / STTA6006P

PACKAGEMECHANICAL DATA

ISOTOP

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

Coolingmethod : byconduction(C)

Orderingtype Marking Package Weight Baseqty Deliverymode

STTA6006P STTA6006P SOD93 3.79g 30 Tube
STTA12006TV1 STTA12006TV1 ISOTOP 27g
STTA12006TV2 STTA12006TV2 ISOTOP 10 Tube

withoutscrews

10 Tube

Epoxymeets UL94,V0

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change withoutnotice. This publication supersedes and replaces all information previously supplied.
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