Datasheet STTA112U Datasheet (SGS Thomson Microelectronics)



STTA112U

TURBOSWITCH

ULTRA-FASTHIGH VOLTAGE DIODE



MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

(typ) 65ns

t

rr

(max) 1.5V

V

F

1A

1200V

FEATURESAND BENEFITS

SPECIFIC TO THE FOLLOWIN G OPER ATI ONS:
SNU B BINGOR C LA MPIN G ,DEMAGN ETIZA T I ON
ANDREC TI FICA T I ON

ULTRA-FASTAND SOFTRECOVERY
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR

HIGHFREQUENCYOPERATION
HIGHREVERSEVOLTAGECAPABILITY

DESCRIPTION

SMB

TURBOSWITCH 1200V drastically cuts losses in
allhighvoltageoperationswhich requireextremely
fast,softand noise-freepower diodes.

Due to their optimized switching performances
they also highly decrease power losses in any

They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clampingor demagnetizingdiodes. They are also
suitableforthe secondaryof SMPSas highvoltage
rectifierdiodes.

associated switching IGBT or MOSFET in all
freewheelmode operations.

ABSOLUTE RATINGS

(limitingvalues)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

FRM

I

FSM

T

stg

T

j

TURBOSWITCH is a trademark of STMicroelectronics

November 1999 -Ed: 5A

Repetitivepeakreversevoltage 1200 V
RMSforwardcurrent 6 A
Repetitivepeakforward current tp= 5 µsF = 5kHz square 10 A
Surgenon repetitive forward current tp= 10ms sinusoidal 20 A
Storagetemperature range - 65 to+ 150 °C
Maximumoperatingjunction temperature 125 °C

1/8

STTA112U

THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

R

th(j-I)

P

1

Junctionto leadthermalresistance 23 °C/W
Conductionpower dissipation I

= 0.8Aδ= 0.5

F(AV)

1.4 W

Tlead=93°C

P

max

Totalpower dissipation

Tlead=90°C 1.5 W

Pmax= P1 + P3 (P3= 10% P1)

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Testconditions Min Typ Max Unit

V

F*

I

R**

V

to

Forwardvoltage drop IF=1A Tj=25°C

Tj= 125°C 1.1

Reverseleakagecurrent VR= 0.8 x

V

RRM

Thresholdvoltage Ip< 3.I

F(AV)

Tj= 25°C
Tj= 125°C90

Tj= 125°C 1.15 V

1.65

1.5
10

300

Rd Dynamicresistance 350 m

Test pulses : * tp = 380 µs, δ <2%

** tp =5 ms ,δ <2%

To evaluatethe maximumconductionlossesusethe followingequation:
P=V

toxIF(AV)

+RdxI

F2(RMS)

V

µA

Ω

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFF SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

rr

I

RM

S factor Softnessfactor Tj= 125°CV

Reverserecovery
time

Maximumrecovery
current

Tj = 25°C

=0.5 A IR= 1A Irr =0.25A

I

F

=1A dIF/dt=-50A/µsVR= 30V

I

F

65

115

Tj = 125°CVR= 600V IF=1A
dI

/dt= -8 A/µs

F

/dt= -50 A/µs5

dI

F

=600V IF=1A

R

/dt= -50 A/µs 0.7

dI

F

1.8

TURN-ON SWITCHING

Symbol Parameter Testconditions Min Typ Max Unit

t

fr

V

Fp

Forwardrecoverytime Tj = 25°C

= 1 A, dIF/dt = 8 A/µs

I

Peakforwardvoltage 35 V

F

measuredat 1.1

VFmax

×

900 ns

ns

A

-

2/8

STTA112U

Fig.1: Conduction losses versus average current.

P1(W)

1.50

δ = 0.1

δ= 0.5δ = 0.2

1.25

1.00

δ =1

0.75

0.50

0.25

0.00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

IF(av) (A)

Fig. 3: Relative variation of thermal transient im-

pedancejunctionto leadversuspulse duration.

Fig. 2: Forward voltage drop versus forward cur­rent(Maximumvalues).

IFM(A)

50.0

Tj=125°C

10.0

1.0

VFM(V)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig.4: Peakreverse recoverycurrentversusdIF/dt
(90%confidence).

IRM(A)

15.0

I

12.5

F=2*IF(av)

10.0

7.5

5.0

2.5

0.0
0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

VR=600V
Tj=125°C

Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).

trr(ns)

300
250

IF=2*IF(av)

200
150
100

50

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

VR=600V
Tj=125°C

Fig.6: Softnessfactor (tb/ta)versusdIF/dt(Typical
values).

S factor

1.00

IF<2*IF(av)

0.80

0.60

0.40
0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

VR=600V
Tj=125°C

3/8

STTA112U

Fig. 7: Relative variation of dynamic parameters

versusjunctiontemperature(ReferenceTj=125°C).

1.1

S factor

1.0

0.9

IRM

0.8

Tj(°C)

0.7
25 50 75 100 125

Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).

tfr(ns)

800
700

IF=2*IF(av)

Tj=125°C

Fig. 8: Transient peak forward voltage versus
dI

/dt(90% confidence).

F

VFP(V)

80
70

IF=2*IF(av)

60
50
40
30
20
10

0

0 20406080100

dIF/dt(A/µs)

Tj=125°C

600
500
400
300
200

0 20406080100

VFR=1.1*VF max.

dIF/dt(A/µs)

4/8

APPLICATION DATA

The 1200V TURBOSWITCH
designed to provide the lowest overall power
losses in all frequency or high pulsed current
operations.

TM

series has been

P = P1+ P2+P3+ P4+ P5 Watts

TOTALLOSSES

due to the diode

STTA112U

In such application (fig. A to D), the way of
calculatingthe power lossesis givenbelow :

CONDUCTION

LOSSES

inthe diode

Fig. A : ”FREEWHEEL MODE”.

SWITCHING

TRANSISTOR

V

R

tp

REVERSE

LOSSES

in the diode

T

SWITCHING

LOSSES

in the diode

DIODE:

TURBOSWITCH

SWITCHING

LOSSES

in the diode

due tothe diode

IL

F=1/T δ= tp/T

LOAD

5/8

STTA112U

APPLICATION DATA (Cont’d)
Fig.B : SNUBBERDIODE. Fig. C : DEMAGNETIZINGDIODE.

PWM

tp

T

F=1/T δ= tp/T

Fig.D : RECTIFIERDIODE.

Fig. E : STATICCHARACTERISTICS.

I

I

F

Rd

V

R

to

V

F

6/8

V

I

R

Conductionlosses :

P1 = V

toxIF(AV)+RdxIF2(RMS)

Reverse losses:
P2 = V

V

RxIR x (1 -

)

δ

APPLICATION DATA (Cont’d)
Fig.F : TURN-OFFCHARACTERISTICS.

V

IL

TRANSISTOR

I

STTA112U

Turn-onlosses:

(inthe transistor,due to the diode)

2

6

xdI

I

×(S+

L

d

IF

×(

F

⁄

3+2

⁄

dt

dt

2

×S)

)×

F

F

I

V

×

R

P5 =

V

R

t

+

RM

I

×

×

RM

2×

I

dI /dt

F

V

I

RM

tbta

dI /dt

R

DIODE

trr = ta + tb S = tb / ta

I

dIF/dt = VR/L

RECTIFIER

OPERATION

V

I

trr = ta + tb

S = tb/ta

RM

tbta

dI /dt

R

Fig.G : TURN-ON CHARACTERISTICS.

VR

V

Turn-offlosses :

V

R

P3=

t

2

I

×

RM

6

x

dI

××

F

⁄

S×F

dt

Turn-offlosses :
withnon negligibleserial inductance

V

P3’=

R

t

2

I

×

RM

6

xdI

×

⁄

F

S×F

dt

L×I

+

RM

2

2

F

×

P3, P3’ and P5 are suitable for power MOSFET
andIGBT

R

I

F

I

dI /dt

F

Fmax

Turn-onlosses:

P4= 0.4 (V

0

V

F

V

Fp

1.1V

F

0t

tfr

t

V

F

FP-VF

)xI

Fmaxxtfr

xF

7/8

STTA112U

PACKAGEMECHANICAL DATA

SMB

E1

D

E

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016

A1

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

C

L

A2

b

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

FOOTPRINTDIMENSIONS(inmillimeters)

2.3

1.52 2.75

1.52

Orderingtype Marking Package Weight Baseqty Deliverymode

STTA112U T03 SMB 0.107g 2500 Tape &reel

Epoxy meetsUL94,V0
Band indicatescathode

Informationfurnished is believedto be accurate and reliable.However, STMicroelectronics assumesno responsibilityfor the consequences of
use ofsuch information nor for any infringementof patents orother rights of thirdparties which may resultfrom its use.No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in lifesupportdevices or systems without express writtenap­proval of STMicroelectronics.

The ST logo is a registeredtrademark of STMicroelectronics

 1999 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore -Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

8/8