Page 1
®
Type Marking
STT818B 818B
■ VERY LOW CO LLECT O R TO EMITTER
SATURATION VOLTAGE
■ DC CURRENT GAIN > 100 ( h
■ 3 A CONTINUOUS COLLECTOR CURRENT
(I
)
C
■ SURFACE-M O UNT ING SOT 23-6L PACKAGE
FE
)
IN TAPE & REEL
STT818B
HIGH GAIN LOW VOLTAGE
PNP POWER TRANSISTOR
APPLICATIONS
■ POWER MANAGEMENT IN PORTABLE
SOT23-6L
(TSOP6)
EQUIPMENTS
■ SWITCHING RE G ULATOR IN BATTER Y
CHARGER APPLICATIONS
DESCRIPTION
The device is manufactured in low voltage PNP
INTER NAL SCH E M ATI C DIAG RA M
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) -30 V
CBO
Collector-Emitter Voltage (IB = 0) -30 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -3 A
I
C
Collector Peak Current -6 A
CM
Base Current -0.2 A
I
B
Base Peak Current -0.5 A
BM
Total Dissipation at TC = 25
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C 1.2 W
o
C
o
C
July 2002
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STT818B
THERMAL DATA
thj-amb
(1)
Thermal Resistance Junction-ambient Max 104.2
R
(1) Packag e mounted on FR4 pcb 25mm x 25mm.
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
(BR)CEO
CBO
EBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -30 V
V
CB
V
= -30 V TC = 125 oC
CB
= -5 V -0.1 µA
V
EB
I
= -10 mA -30 V
C
-0.1
-20
Breakdown Voltage
(I
= 0)
B
∗ Collector-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage IC = -0.5 A VCE = -2 V -0.71 -1.1 V
BE(ON)
h
∗ DC Current Gain IC = -0.5 A VCE = -1 V
FE
* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
IC = -0.5 A IB = -5 mA
I
= -2 A IB = -20 mA
C
I
= -1.2 A IB = -20 mA
C
IC = -0.5 A IB = -5 mA
I
= -1.2 A IB = -20 mA
C
I
= -2 A IB = -20 mA
C
I
= -2.5 A VCE = -3 V
C
-0.075
-0.21
-0.74 -1.1
100
100
-0.15
-0.5
-0.25
-1.1
-1.2
µA
µA
V
V
V
V
V
V
Safe Operating Are a Derating Curve
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STT818B
DC Current Gain
Collector -Em it ter Sat uration V oltage
DC Current Gain
Base-Emitt er Sat uration Volta ge
Switching Times Resistive Load
Switching Times Resist ive Load
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STT818B
SOT23-6L MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 0.035 0.057
A1 0.00 0.15 0.000 0.006
A2 0.90 1.30 0.035 0.051
b 0.25 0.50 0.010 0.020
C 0.09 0.20 0.004 0.008
D 2.80 3.10 0.110 0.122
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.35 0.55 0.014 0.022
e 0.95 0.037
e1 1.90 0.075
mm mils
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AA2
A1
b
e
c
L
E
e1
D
E1
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STT818B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
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