Datasheet sts9d8nh3ll Datasheet

Features

Type V

STS9D8NH3LL

low on-resistance STripFET™ Power MOSFET

DSSRDS(on)

30V < 0.022Ω 7nC 8A

Q

1

30V < 0.015Ω 8nC 9A

Q

2

STS9D8NH3LL

Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8

Qg I

D

■ Optimal R

■ Conduction losses reduced

■ Switching losses reduced

(on) x Qg trade-off @ 4.5V

DS

Application

■ Switching applications

Description

This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.

S0-8

Figure 1. Internal schematic diagram

Table 1. Device summary

Order code Marking Package Packaging

STS9D8NH3LL 9D8H3LL- SO-8 Tape & reel

December 2007 Rev 3 1/14

www.st.com

14

Contents STS9D8NH3LL

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/14

STS9D8NH3LL Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Type Value Unit

V

I

DM

P

E

AS

1. Pulse width limited by safe operating area

2. Starting TJ = 25 °C, ID = 7.5 A

Drain-source voltage (vGS = 0)

DS

Gate- source voltage

GS

I

Drain current (continuous) at TC = 25°C

D

Drain current (continuous) at

I

D

TC = 100°C

(1)

Drain current (pulsed)

Total dissipation at TC = 25°C

TOT

(2)

Single pulse avalanche energy 150 mJ

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

30 30

±16 ±16

8 9

5

6.3

32 36

2 2

Table 3. Thermal data

Symbol Parameter Value Unit

(1)

R

thj-a

T

1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t < 10s

Thermal resistance junction-ambient max 62.5 °C/W

Thermal operating junction-ambient 150 °C

J

Storage temperature -55 to 150 °C

stg

V V

A A

W W

3/14

Electrical characteristics STS9D8NH3LL

2 Electrical characteristics

(T

Table 4. On/off states

=25°C unless otherwise specified)

CASE

Symbol Parameter Test conditions Type Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

R

DS(on)

Table 5. Dynamic

Drain-source Breakdown voltage

Zero gate voltage Drain current (V

Gate-body leakage current (V

Gate threshold voltage

Static drain-source on resistance

DS

= 0)

GS

ID = 250 µA, VGS = 0

V

= Max rating

= 0)

DS

=Max rating

V

DS

@125°C

V

= ± 16 V

GS

V

= VGS,

DS

= 250 µA

I

D

= 10 V, ID = 4 A

V

GS

= 10 V, ID = 4.5 A

V

GS

= 4.5 V, ID = 4 A

V

GS

= 4.5 V, ID = 4.5 A

V

GS

Q Q

30

1

30

2

1

2

1

2

1

2

1

2

1

2

1

2

0.018

0.012

0.020

0.014

1 1

10 10

±100 ±100nAnA

0.022

0.015ΩΩ

0.025

0.0175ΩΩ

V V

µA µA

V V

Symbol Parameter Test conditions Type Min. Typ. Max. Unit

Q

C

Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge

gs

= 25 V, f = 1 MHz,

V

DS

= 0

V

GS

= 15 V, ID = 8 A,

V

DD

= 4.5 V

V

GS

(see Figure 25)

Q

Gate-drain charge

gd

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

857

1070

147 290

20 34

7 8

2.5 2

2.3

2.8

10 11

pF pF

nC nC

4/14

STS9D8NH3LL Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Type Min. Typ. Max. Unit

t

d(on)

Turn-on delay time

t

Rise time

r

t

d(off)

Turn-off delay time

t

Fall time

f

Table 7. Source drain diode

VDD=15 V, ID=4 A, RG=4.7 Ω,

= 4.5 V

V

GS

(see Figure 27)

=15 V, ID=4 A,

V

DD

=4.7 Ω,

R

G

VGS= 4.5V

(see Figure 27)

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

12

8.2

14.5

6

23

27.8

8

3.6

Symbol Parameter Test conditions Type Min Typ. Max Unit

V

=15 V, ID=4 A

DD

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 8 A, VGS = 0

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

R

G

V

GS

V

DD

R

G

V

GS

ISD = 8 A, V

DD

di/dt = 100 A/µs,

= 150°C

T

j

(see Figure 26)

=4.7 Ω,

=4.5 V

=15 V, ID= 4A

=4.7 Ω,

=4.5 V

= 15 V

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

Q

1

Q

2

15

22.8

5.7

14.9

0.76

1.3

8 9

32 36

1.5

ns ns ns ns

A A

V V

ns

ns nC nC

A A

5/14

Electrical characteristics STS9D8NH3LL

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for Q1 Figure 3. Safe operating area for Q2

Figure 4. Thermal impedance for Q1 Figure 5. Thermal impedance for Q2

Figure 6. Output characteristics for Q1 Figure 7. Output characteristics for Q2

6/14

STS9D8NH3LL Electrical characteristics

Figure 8. Transfer characteristics for Q1 Figure 9. Transfer characteristics for Q2

Figure 10. Static drain-source on resistance

Figure 12. Normalized BV

for Q1

vs temperature

DSS

Figure 11. Static drain-source on resistance

for Q2

Figure 13. Normalized BV

vs temperature

DSS

for Q2

7/14

Electrical characteristics STS9D8NH3LL

Figure 14. Gate charge vs gate-source voltage

for Q1

Figure 15. Gate charge vs gate-source voltage

for Q2

Figure 16. Capacitance variations for Q1 Figure 17. Capacitance variations for Q2

Figure 18. Normalized gate threshold voltage

8/14

vs temperature for Q1

Figure 19. Normalized gate threshold voltage

vs temperature for Q2

STS9D8NH3LL Electrical characteristics

Figure 20. Normalized on resistance vs

temperature for Q1

Figure 22. Source-drain diode forward

characteristics for Q1

Figure 21. Normalized on resistance vs

temperature for Q2

Figure 23. Source-drain diode forward

characteristics for Q2

9/14

Test circuit STS9D8NH3LL

3 Test circuit

Figure 24. Switching times test circuit for

resistive load

Figure 26. Test circuit for inductive load

switching and diode recovery times

Figure 25. Gate charge test circuit

Figure 27. Unclamped Inductive load test

circuit

Figure 28. Unclamped inductive waveform Figure 29. Switching time waveform

10/14

STS9D8NH3LL Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

11/14

Package mechanical data STS9D8NH3LL

SO-8 MECHANICAL DATA

DIM.

A 1.75 0.068

a1 0.1 0.25 0.003 0.009

a2 1.65 0.064

a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e

e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

1.27

0.050

12/14

STS9D8NH3LL Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

05-Jan-2007 1 First release

06-Mar-2007 2 Some value changed on Ta bl e 4 (R

10-Dec-2007 3 Added E

value on Table 2: Absolute maximum ratings

AS

DS(on)

for Q2)

13/14

STS9D8NH3LL

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

14/14