Datasheet sts5n15f3 Datasheet

Features

R

Type V

STS5N15F3 150 V < 0.057 Ω 5 A

■ Low on-resistance

■ Low input capacitance and gate charge

■ Low gate input resistance

DSS

DS(on)

max

Application

■ Switching applications

Description

STS5N15F3

N-channel 150 V, 0.045 Ω, 5 A, SO-8

STripFET

I

D

Figure 1. Internal schematic diagram

TM

III Power MOSFET

SO-8

This product utilizes the latest advanced design
rules of ST’s proprietary STripFET
which is suitable for the most demanding DC-DC
converter applications where high efficiency is
required.

Table 1. Device summary

Order code Marking Package Packaging

STS5N15F3 5F15- SO-8 Tape and reel

TM

technology

August 2010 Doc ID 15472 Rev 2 1/12

www.st.com

12

Contents STS5N15F3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12 Doc ID 15472 Rev 2

STS5N15F3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

T

stg

T

1. Pulse width limited by safe operating area

Drain-source voltage (VGS = 0) 150 V

Gate-source voltage ± 20 V

Drain current (continuous) at TC = 25 °C 5 A

Drain current (continuous) at TC=100 °C 3.2 A

(1)

Drain current (pulsed) 20 A

Total dissipation at TC = 25 °C 2.5 W

Storage temperature

-55 to 150 °C

Operating junction temperature

j

Table 3. Thermal data

Symbol Parameter Value Unit

(1)

R

thj-pcb

1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec

Thermal resistance junction-pcb max 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit

I

AS

E

AS

Avalanche current, repetitive or not-repetitive
(pulse width limited by T

max)

j

Single pulse avalanche energy
(starting T

= 25 °C, ID = IAS, VDD = 140 V)

j

2.5 A

300 mJ

Doc ID 15472 Rev 2 3/12

Electrical characteristics STS5N15F3

2 Electrical characteristics

(TJ = 25 °C unless otherwise specified).

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

= 1 mA, VGS= 0 150 V

I

D

= 150 V,

V

DS

= 150 V, @125 °C

V

DS

V

= ±20 V ±100 nA

GS

1

10

Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V

Static drain-source on
resistance

V

= 10 V, ID= 2.5 A 0.045 0.057 Ω

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

C

Q
Q
Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

=25 V, f = 1 MHz,

V

DS

V

= 0

GS

= 75 V, ID = 5 A

V

DD

=10 V

V

GS

Figure 14 on page 8

f=1 MHz Gate DC Bias=0

R

Gate input resistance

g

Test signal level=20 mV
open drain

1300

-

140

-

20.5

29

-

3.6

-

14.6

-3.7- Ω

µA
µA

pF
pF
pF

nC
nC
nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/12 Doc ID 15472 Rev 2

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

= 75 V, ID= 2.5 A,

V

DD

RG=4.7 Ω, VGS=10 V

Figure 13 on page 8

9

13

­46

20

ns
ns

­ns

ns

STS5N15F3 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

I

I

SDM

V

SD

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current - 5 A

SD

(1)

Source-drain current (pulsed) - 20 A

(2)

Forward on voltage I

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

I

SD

SD

= 5 A, V

= 5 A,

= 0 - 1.3 V

GS

di/dt = 100 A/µs,

= 40 V, TJ = 150 °C

V

R

Figure 15 on page 8

110

-

498

9.1

ns

nC

A

Doc ID 15472 Rev 2 5/12

Electrical characteristics STS5N15F3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized BV

vs temperature Figure 7. Static drain-source on resistance

DSS

6/12 Doc ID 15472 Rev 2

STS5N15F3 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Gate charge vs gate-source voltage

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs

temperature

Doc ID 15472 Rev 2 7/12

Test circuit STS5N15F3

3 Test circuit

Figure 13. Switching times test circuit for

resistive load

Figure 14. Gate charge test circuit

VDD

3.3
µF

V

DD

VGS

VD

RG

RL

D.U.T.

2200

µF

PW

AM01468v1

Figure 15. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST
DIODE

G

A

A

L=100µH

B

B

D

G

S

3.3

µF

1000

µF

V

DD

12V

47kΩ

100nF

IG=CONST

V

i=20V=VGMAX

2200
µF

2.7kΩ

100Ω

D.U.T.

47kΩ

PW

1kΩ

AM01469v1

Figure 16. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

V

VDD

G

Pw

AM01470v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

0

0

10%

tdon

ton

90%

tr

10%

tdoff

VDS

90%

V

GS

8/12 Doc ID 15472 Rev 2

AM01471v1

toff

tf

90%

10%

AM01473v1

STS5N15F3 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

Doc ID 15472 Rev 2 9/12

Package mechanical data STS5N15F3

SO-8 MECHANICAL DATA

DIM.

A 1.75 0.068

a1 0.1 0.25 0.003 0.009

a2 1.65 0.064

a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e

e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

1.27

0.050

10/12 Doc ID 15472 Rev 2

STS5N15F3 Revision history

5 Revision history

Table 9. Document revision history

Date Revision Changes

03-Mar-2009 1 First release

23-Aug-2010 2 Updated Table 1: Device summary.

Doc ID 15472 Rev 2 11/12

STS5N15F3

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12/12 Doc ID 15472 Rev 2