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STripFET™ Power MOSFET plus schottky rectifier
Obsolete Product(s) - Obsolete Product(s)
General features
Typ e V
STS4DNFS30 30V <0.055Ω 4.5A
DSS
R
DS(on)
STS4DNFS30
N-channel - 30V - 0.044Ω - 4.5A SO-8
I
D
Schottky I
F(AV)
4.5A 30V 0.53V
V
RRM
V
F(MAX)
Description
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
converters for printers, portable equipment.
Applications
■ Switching application
SO-8
Internal schematic diagram
Order codes
Part number Marking Package Packaging
STS4DNFS30 S4DNFS30 SO-8 Tape & reel
July 2006 Rev 1 1/12
www.st.com
12
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Contents STS4DNFS30
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STS4DNFS30 Electrical ratings
1 Electrical ratings
Table 1. Mosfet absolute maximum ratings
Symbol Parameter Value Unit
V
V
I
DM
P
1. Pulse width limited by safe operating area
Drain-source voltage (VGS = 0) 30 V
DS
Gate- source voltage ± 20 V
GS
Drain current (continuous) at TC = 25°C 4.5 A
I
D
I
Drain current (continuous) at TC = 100°C 3.2 A
D
(1)
Drain current (pulsed) 13 A
Total dissipation at TC = 25°C 2 W
TOT
Table 2. Schottky absolute maximum ratings
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
I
dv/dt Critical rate of rise of reverse voltage 10000 v/µs
Repetitive peak reverse voltage 30 V
RRM
RMS forward current 10 A
T
=125°C
Average forward current
Surge non repetitive forward current
FSM
Repetitive peak reverse current
RRM
Non repetitive peak reverse current tp=100µs 1 A
RSM
L
δ=0.5
tp=10ms
Sinusoidal
tp=2µs
F=1kHz
4A
75 A
1A
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-amb Thermal resistance junction-amb Mosfet
T
1. Mounted on FR-4 board (steady state)
Storage temperature range Max -55 to 150 °C
stg
Junction temperature -55 to 150 °C
T
j
(1)
62.5 °C/W
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Electrical characteristics STS4DNFS30
2 Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
= 250µA, VGS = 0 30 V
I
D
V
= Max rating
DS
= Max rating, TC=125°C
V
DS
1
10µAµA
VGS = ± 20V ± 100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 1 V
Static drain-source on
resistance
= 10V, ID = 2A
V
GS
= 5V, ID = 2A
V
GS
0.044 0.055
0.085ΩΩ
Table 5. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 25°C
R
V
F
1. Pulse test: tp=380µs, δ < 2%. To evaluate the conduction losses use the following equation:
current
Zero gate voltage
(1)
drain current (V
GS
Reverse leakage
(1)
I
T
j
= 100°C
T
j
= 25°C
T
j
= 125°C
T
j
= 0)
= 25°C
T
j
= 125°C
T
j
P0.24I
× 0.068I
FAV()
V
R
I
F
I
F
= V
= 2A
= 4A
RRM
2
F
6
0.325
0.43
RMS()+=
20015µA
0.45
0.375VV
0.53
0.51VV
mA
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
C
C
C
Q
Q
Q
Forward
fs
transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
4/12
V
=10V, ID =2A 5 S
DS
330
= 25 V, f = 1 MHz, VGS = 0
V
DS
115
28
VDD = 15V, ID = 4.5A,
VGS = 5V
(see Figure 13)
4.7
1.2
2.1
pF
pF
pF
nC
nC
nC
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STS4DNFS30 Electrical characteristics
Table 7. Switching times
Symbol Parameter Test Conditions Min. Typ. Max Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
VDD = 15V, ID = 2A,
= 4.7Ω, V
R
G
GS
= 5V
(see Figure 12)
VDD = 15V, ID = 2A,
RG = 4.7Ω, V
GS
= 5V
(see Figure 12)
9
17
15
6
Table 8. Source drain diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
SDM
VSD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 4.5A, VGS = 0 1.2 V
Reverse recovery time
t
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 4.5A, di/dt = 100A/µs
V
DD
(see Figure 17)
= 15V, Tj = 150°C
14.3
4.513A
22
1.3
ns
ns
ns
ns
A
ns
nC
A
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Electrical characteristics STS4DNFS30
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Source-drain diode forward
characteristics
Figure 6. Static drain-source on resistance
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STS4DNFS30 Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
Figure 11. Normalized BV
vs temperature
temperature
voltage vs
DSS
Figure 10. Normalized on resistance vs
temperature
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Test circuits STS4DNFS30
3 Test circuits
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
resistive load
switching and diode recovery times
Figure 13. Gate charge test circuit
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
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STS4DNFS30 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data STS4DNFS30
SO-8 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
S 8 (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
1.27
0.050
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STS4DNFS30 Revision history
5 Revision history
Table 9. Revision history
Date Revision Changes
19-Jul-2005 1 First release
11/12
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STS4DNFS30
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