Datasheet sts3c2f100 Datasheet

N-channel 100V - 0.110 Ω - 3A SO-8

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Complementary pair STripFET™ Power MOSFET

General features

Type V

STS3C2F100(N-channel) 100V <0.145 3.0A

STS3C2F100(P-channel) 100V <0.380 1.5A

■ Standard outline for easy automated surface

mount assembly

■ Ultra low gate charge

■ Ultra low on-resistance

Description

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

DSSRDS(on)ID

STS3C2F100

S0-8

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number Marking Package Packaging

STS3C2F100 S3C2F100 SO-8 Tape & reel

November 2006 Rev 3 1/14

www.st.com

14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Contents STS3C2F100

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

STS3C2F100 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

V

V

I

DM

P

T

1. Pulse width limited by safe operating area

Drain-source voltage (vgs = 0) 100 V

DS

Gate- source voltage ±20 V

GS

Drain current (continuos) at TC = 25°C 3.0 1.5 A

I

D

I

Drain current (continuos) at TC = 100°C 1.9 1.0 A

D

(1)

Drain current (pulsed) 12 6 A

Total dissipation at TC = 25°C 2 W

TOT

Storage temperature -55 to 150 °C

stg

Max. operating junction temperature 150 °C

T

j

Table 2. Thermal data

(1)

R

thj-a

1. When mounted on 1 in

Thermal resistance junction-ambient 62.5 °C/W

2

pad of 2 oz. copper, t ≤ 10 sec

3/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Electrical characteristics STS3C2F100

2 Electrical characteristics

(T

Table 3. On/off states

=25°C unless otherwise specified)

CASE

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
Breakdown voltage

S

Zero gate voltage
Drain current (V

Gate-body leakage
current (V

DS

= 0)

GS

= 0)

ID = 250 µA, VGS = 0

VDS = Max rating n-ch 1 µA

=Max rating,

V

DS

=125°C

T

C

V

= ±20V

GS

Gate threshold voltage VDS = VGS, ID = 250µA

= 10V, ID = 1.5A

Static drain-source on
resistance

V

GS

= 10V, ID = 1.0A

V

GS

n-ch
p-ch

100 V

p-ch 10 µA

n-ch
p-ch

n-ch
p-ch

n-ch
p-ch

2V

0.110

0.320

±100 nA

0.145

0.380ΩΩ

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

Forward transconductance

VDS = 20 V, ID= 1.5 A
VDS = 30 V, ID= 1.0 A

n-ch
p-ch

3
4

S
S

C

C

C

Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

g

VDS = 25V, f = 1 MHz,

= 0

V

GS

N-channel

VDD=80V ID=3A

=10V

V

Q

Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 .

Gate-source charge

gs

Gate-drain charge

gd

GS

P-channel

= 80V ID = 1.5A

V

DD

= 10V

V

GS

n-ch
p-ch

n-ch
p-ch

n-ch
p-ch

n-ch
p-ch

n-ch
p-ch

n-ch
p-ch

460
705

70
83

30
30

15
20

3.7

2.0

4.7

6.0

pF
pF

pF
pF

pF
pF

2027nC

nC

nC
nC

nC
nC

4/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

STS3C2F100 Electrical characteristics

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

N-channel

t

d(on)

Turn-on delay time

t

Rise time

r

= 50 V, ID = 1.5 A

V

DD

RG=4.7 Ω, VGS = 10 V

P-channel

= 50 V, ID = 1.5 A

V

DD

RG=4.7 Ω, VGS = 10 V

n-ch
p-ch

n-ch
p-ch

16
14

25
20

ns
ns

ns
ns

(see Figure 25)

N-channel

t

d(off)

Turn-off delay time

t

Fall time

f

VDD = 50 V, ID = 1.5 A

=4.7 Ω, VGS = 10 V

R

G

P-channel

= 50 V, ID = 1.5 A

V

DD

=4.7 Ω, VGS = 10 V

R

G

n-ch
p-ch

n-ch
p-ch

32
33

20

7.5

ns
ns

ns
ns

(see Figure 25)

Table 6. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

SDM

V

SD

I

Source-drain current

SD

Source-drain current

(1)

(pulsed)

(2)

Forward on voltage

ISD = 3A, VGS = 0

= 1.5A, VGS = 0

I

SD

N-channel

= 3 A, di/dt = 100A/µs

I

t

Q

I

RRM

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

SD

VDD=50 V, Tj =150 oC

P-channel

= 1.5 A, di/dt =

I

SD

100A/µs

=50 V, Tj =150 oC

V

DD

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

n-ch
p-ch

n-ch
p-ch

n-ch
p-ch

n-ch
p-ch
n-ch
p-ch
n-ch
p-ch

3.o

1.5AA

12

6.0AA

1.2

1.2VV

90

65
230
175

5.0

5.4

ns

ns
nC
nC

A
A

5/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Electrical characteristics STS3C2F100

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area n-ch Figure 2. Thermal impedance n-ch

Figure 3. Output characterisics n-ch Figure 4. Transfer characteristics n-ch

Figure 5. Transconductance n-ch Figure 6. Static drain-source on resistance n-

ch

6/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

STS3C2F100 Electrical characteristics

Figure 7. Gate charge vs gate-source voltage

n-ch

Figure 9. Normalized gate threshold voltage

vs temperature n-ch

Figure 8. Capacitance variations n-ch

Figure 10. Normalized on resistance vs

temperature n-ch

Figure 11. Source-drain diode forward

characteristics n-ch

Figure 12. Normalized breakdown voltage vs

temperature n-ch

7/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Electrical characteristics STS3C2F100

Figure 13. Safe operating area p-ch Figure 14. Thermal impedance p-ch

Figure 15. Output characterisics p-ch Figure 16. Transfer characteristics p-ch

Figure 17. Transconductance p-ch Figure 18. Static drain-source on resistance p-

ch

8/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

STS3C2F100 Electrical characteristics

Figure 19. Gate charge vs gate-source voltage

p-ch

Figure 21. Normalized gate threshold voltage

vs temperature p-ch

Figure 20. Capacitance variations p-ch

Figure 22. Normalized on resistance vs

temperature p-ch

Figure 23. Source-drain diode forward

characteristics p-ch

Figure 24. Normalized breakdown voltage vs

temperature p-ch

9/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Test circuit STS3C2F100

3 Test circuit

Figure 25. Switching times test circuit for

Figure 27. Test circuit for inductive load

resistive load

switching and diode recovery times

Figure 26. Gate charge test circuit

Figure 28. Unclamped Inductive load test

circuit

Figure 29. Unclamped inductive waveform Figure 30. Switching time waveform

10/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

STS3C2F100 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com

11/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Package mechanical data STS3C2F100

SO-8 MECHANICAL DATA

DIM.

A 1.75 0.068

a1 0.1 0.25 0.003 0.009

a2 1.65 0.064

a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e

e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

1.27

0.050

12/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

STS3C2F100 Revision history

5 Revision history

Table 7. Revision history

Date Revision Changes

22-Jun-2004 1 First release

27-May-2005 2 New ECOPACK label

13-Nov-2006 3 The document has been reformatted

13/14

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

STS3C2F100

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2006 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

14/14