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ultra low gate charge STripFET™ Power MOSFET
Obsolete Product(s) - Obsolete Product(s)
Features
Type V
STS12NH3LL 30 V <0.0105 Ω 12 A
DSS
R
DS(on)
STS12NH3LL
N-channel 30 V - 0.008 Ω - 12 A - SO-8
I
D
■ Optimal R
■ Switching losses reduced
■ Low input capacitance
■ Low threshold device
x Qg trade-off @ 4.5 V
DS(on)
Application
■ Switching applications
Description
This series is based on the latest generation of
ST’s proprietary “STripFET™” technology. An
innovative layout enables the device to also
exhibit extremely low gate charge for the most
demanding requirements as high-side switch in
high-frequency DC-DC converters. It’s therefore
ideal for high-density converters in telecom and
computer applications.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Packag Packaging
STS12NH3LL 12H3LL SO-8 Tape & reel
November 2007 Rev 9 1/13
www.st.com
13
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Contents STS12NH3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STS12NH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
V
GS
V
GS
I
D
I
D
I
DM
P
TOT
T
T
stg
1. Continuous mode
2. Guaranteed for test time ≤ 15 ms
3. Pulse width limited by safe operating area
Drain-source voltage (VGS = 0) 30 V
(1)
Gate-source voltage ± 16 V
(2)
Gate-source voltage ± 18 V
Drain current (continuous) at TC = 25 °C 12 A
Drain current (continuous) at TC=100 °C 7.5 A
(3)
Drain current (pulsed) 48 A
Total dissipation at TC = 25 °C 2.7 W
Operating junction temperature
J
Storage temperature
-55 to 150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
(1)
R
thj-amb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-ambient 47 °C/W
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Electrical characteristics STS12NH3LL
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250 µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125 °C
DS
= ±16 V
V
GS
= VGS, ID = 250 µA
V
DS
= 10 V, ID= 6 A
V
GS
= 4.5 V, ID= 6 A
V
GS
30 V
1
10
±100 nA
1V
0.008
0.010
0.0105
0.013ΩΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
C
C
C
Forward transconductance
fs
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
=10 V, ID = 12 A
V
DS
V
=25 V, f=1 MHz,
DS
=0
V
GS
38 S
965
285
38
µA
µA
pF
pF
pF
Q
g
Total gate charge
Q
Q
Q
Q
Gate-source charge
gs
Gate-drain charge
gd
Pre Vth gate-to-source
gs1
charge
Post V
gs2
th
charge
gate-to-source
VDD=15 V, ID = 12 A
=4.5 V
V
GS
(see Figure 20)
=15 V, ID = 12 A
V
DD
=4.5 V
V
GS
(see Figure 20)
9
3.7
3
2.5
1.2
12 nC
nC
nC
nC
nC
f=1 MHz Gate DC Bias = 0
R
Gate Input Resistance
G
Test signal level = 20 mV
0.5 1.5 2.5 Ω
open drain
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STS12NH3LL Electrical characteristics
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
=15 V, ID= 6 A,
V
DD
=4.7 Ω, VGS=4.5 V
R
G
(see Figure 14)
15
32
18
8.5
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Source-drain current 12 A
(1)
Source-drain current (pulsed) 48 A
(2)
Forward on Voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
=12 A, VGS=0
I
SD
=12 A,
I
SD
di/dt = 100 A/µs,
=20 V, Tj=150 °C
V
DD
(see Figure 16)
24
17.4
1.45
1.3 V
ns
nC
A
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Electrical characteristics STS12NH3LL
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
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STS12NH3LL Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs
temperature
Figure 13. Normalized B
vs temperature
VDSS
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Test circuit STS12NH3LL
3 Test circuit
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
resistive load
switching and diode recovery times
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
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STS12NH3LL Test circuit
Figure 20. Gate charge waveform
Vds
Vgs(th)
Qgs1
Qgs2 Qgd
Id
Vgs
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Package mechanical data STS12NH3LL
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
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STS12NH3LL Package mechanical data
SO-8 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
S 8 (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
1.27
0.050
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Revision history STS12NH3LL
5 Revision history
Table 8. Document revision history
Date Revision Changes
22-Jun2004 1 First release
03-Aug-2004 2 Some value change in Tabl e 2
08-Mar-2005 3 Complete version
17-Mar-2005 4 Ron value change (see Ta bl e 4 )
23-Jun-2005 5 New Rg value on Ta bl e 5
30-Mar-2006 6 The document has been reformatted
17-Apr-2007 7 New parameters on Tabl e 5 and new Figure 20
23-Apr-2007 8 Modified value on Tab l e 2
26-Nov-2007 9 Modified marking on Ta b le 1
12/13
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STS12NH3LL
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