Datasheet sts10dn3lh5 Datasheet

Features

STS10DN3LH5

Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8

STripFET™ V Power MOSFET

Type V

DSS

R

DS(on)

max I

D

STS10DN3LH5 30 V 0.021 Ω 10 A

■ R

■ Extremely low on-resistance R

■

Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

* Qg industry benchmark

DS(on)

Application

■ Switching applications

Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

SO-8

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes Marking Package Packaging

STS10DN3LH5 10DD3L SO-8 Tape and reel

May 2009 Doc ID 15624 Rev 1 1/13

www.st.com

13

Contents STS10DN3LH5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 15624 Rev 1

STS10DN3LH5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

I

D

DM

P

I

TOT

Drain-source voltage (V

DS

Gate-Source voltage ± 22 V

GS

(1)

Drain current (continuous) at TC = 25 °C 10 A

Drain current (continuous) at TC = 100 °C 7 A

D

(2)

Drain current (pulsed) 40 A

= 0) 30 V

GS

Total dissipation at TC = 25 °C 2.5 W

Derating factor 0.02 W/°C

(3)

E

AS

T

Single pulse avalanche energy 50 mJ

Operating junction temperature

J

Storage temperature

stg

- 55 to 150 °C

1. Limited by wire bonding

2. Pulse width limited by safe operating area

3. Starting TJ = 25 °C, ID = 21 A, L= 0.2 mH

Table 3. Thermal resistance

Symbol Parameter Value Unit

R

thJC

thJA

T

J

Thermal resistance junction-case max 50 °C/W

Thermal resistance junction-case max 100 °C/W

Maximum lead temperature for soldering purpose

275 °C

Doc ID 15624 Rev 1 3/13

Electrical characteristics STS10DN3LH5

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

Drain-source breakdown Voltage

Zero gate voltage drain current (VGS = 0)

= 250 µA, VGS= 0 30 V

I

D

= 30 V

V

DS

= 30 V, Tc = 125 °C

V

DS

1

10

Gate body leakage

I

V

GS(th)

R

DS(on)

GSS

current

= 0)

(V

DS

Gate threshold voltage V

Static drain-source on resistance

= ± 22 V ±100 nA

V

GS

= VGS, ID = 250 µA 1 V

DS

= 10 V, ID= 5 A 0.019 0.021 Ω

V

GS

V

= 4.5 V, ID= 5 A 0.023 0.028 Ω

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min Typ. Max. Unit

C C C

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

V

= 25 V, f = 1 MHz,

DS

= 0

V

GS

475

-

97

-

19

µA µA

pF pF pF

Q Q Q

Q

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

Pre Vth gate-to-source

gs1

charge Post V

gs2

source charge

gate-to-

th

V

DD

V

GS

(Figure 14)

V

DD

V

GS

(Figure 19)

f = 1 MHz gate bias

R

Gate input resistance

G

Bias = 0 test signal level = 20 mV

open drain

4/13 Doc ID 15624 Rev 1

= 15 V, ID = 10 A = 5 V

= 15 V, ID = 10A = 5 V

4.6

-

1.7

1.9

0.67

-

0.84

nC

-

nC nC

nC

-2.5 -Ω

STS10DN3LH5 Electrical characteristics

Table 6. Switching on/off (resistive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 15 V, ID = 5 A,

V

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

DD

= 4.7 Ω, V

R

G

GS

= 10 V

(Figure 13 and Figure 18)

V

= 15 V, ID = 5 A,

DD

= 4.7 Ω, V

R

G

GS

= 10 V

(Figure 13 and Figure 18)

-

4

22

13

2.8

ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

t

Q

I

RRM

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

Source-drain current Source-drain current

(1)

(pulsed)

Forward on voltage

SD

rr

Reverse recovery time Reverse recovery charge

rr

Reverse recovery current

I

= 5 A, V

SD

= 10 A, V

I

SD

di/dt = 100 A/µs,

(Figure 15)

GS

DD

= 0

= 25 V

-

10 40

A A

-1.1V

16.2

-

7.8 1

ns

nC

A

Doc ID 15624 Rev 1 5/13

Electrical characteristics STS10DN3LH5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

(A)

Tj=150°C

AM03899v1

Tc=25°C

100

DS(on)

Sinlge pulse

Operation in this area is

Limited by max R

10

1

100ms

10ms

1s

0.1

0.01

0.1

1

10

DS

(V)

V

Figure 4. Output characteristics Figure 5. Transfer characteristics

I

D

(A)

70

VGS=10V

6V

60

50

5V

AM03900v1

I

(A)

70

60

50

D

VDS=5V

AM03901v1

40

30

20

3V

10

0

Figure 6. Normalized BV

BV

DSS

1

0

2

3

DSS

4

vs temperature Figure 7. Static drain-source on resistance

(norm)

1.10

1.05

1.00

0.95

0.90

0.85

-55

-30

20

-5

45

70

95

120

4V

V

DS

T

J

(°C)

(V)

AM03902v1

R

DS(on)

40

30

20

10

(Ω)

0

35

2

ID=13.5A V

GS

4

=10V

8

V

GS

6

(V)

AM03903v1

30

25

20

15

10

5

0

5

0

10

15

20

25

I

D

(A)

6/13 Doc ID 15624 Rev 1

STS10DN3LH5 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

V

GS

(V)

12

VDD=15V

D

=27A

I

AM03904v1

10

8

6

4

2

0

2

4

Q

g

6

(nC)

Figure 10. Normalized gate threshold voltage

V (norm)

vs temperature

GS(th)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

-55

-30

AM03906v1

20

-5

45

70

95 120 145

T

J

(°C)

C

(pF)

810

710

TJ=25°C

f=1MHz

610

510

410

310

210

Crss

110

10

0

10

20

V

Figure 11. Normalized on resistance vs

temperature

R

DS(on)

(norm)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

-55

-30

20

-5

45

70

95

120

T

J

AM03905v1

Ciss

Coss

DS

(V)

AM03907v1

(°C)

Figure 12. Source-drain diode forward

characteristics

V

SD

(V)

1.1

1.0

0.9

0.8

J

=25°C

T

0.7

0.6

0.5

0.4 0

TJ=-55°C

T

J

=175°C

10

15

5

20

25

AM03908v1

I

SD

(A)

Doc ID 15624 Rev 1 7/13

Test circuits STS10DN3LH5

3 Test circuits

Figure 13. Switching times test circuit for

PW

resistive load

VGS

VD

RG

RL

D.U.T.

2200

µF

3.3 µF

AM01468v1

V

DD

Figure 15. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

G

R

A

FAST DIODE

B

A

L=100µH

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 14. Gate charge test circuit

V

i=20V=VGMAX

PW

2200 µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 16. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3 µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

AM01472v1

8/13 Doc ID 15624 Rev 1

0

10%

tdon

ton

90%

tr

10%

V

GS

VDS

90%

tdoff

AM01471v1

toff

tf

90%

10%

AM01473v1

STS10DN3LH5 Test circuits

Figure 19. Gate charge waveform

Doc ID 15624 Rev 1 9/13

Package mechanical data STS10DN3LH5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

10/13 Doc ID 15624 Rev 1

STS10DN3LH5 Package mechanical data

SO-8 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

A 1.75 0.068

a1 0.1 0.25 0.003 0.009

a2 1.65 0.064

a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e

1.27

0.050

e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

Doc ID 15624 Rev 1 11/13

Revision history STS10DN3LH5

5 Revision history

Table 8. Document revision history

Date Revision Changes

12-May-2009 1 First release

12/13 Doc ID 15624 Rev 1

STS10DN3LH5

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Doc ID 15624 Rev 1 13/13