Page 1
Features
■ High gain
■ Low V
■
■ Reduced component count
CE(sat)
Simplified circuit design
Applications
STS05DTP03
Dual NPN-PNP complementary bipolar transistor
5
8
4
1
■ Push-pull or Totem-Pole configuration
■ MOSFET and IGBT gate driving
■ Motor, relay and solenoid driving
Description
The STS05DTP03 is a hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar technology. The STS05DTP03 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
Table 1. Device summary
SO-8
Figure 1. Internal schematic diagram
Order code Marking Package Packaging
STS05DTP03 S05DTP03 SO-8 Tape and reel
March 2009 Rev 1 1/10
www.st.com
10
Page 2
Electrical ratings STS05DTP03
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
NPN PNP
V
V
V
P
P
CBO
CEO
EBO
I
I
CM
I
I
BM
TOT
TOT
T
T
Collector-base voltage (IE = 0) 45 -45 V
Collector-emitter voltage (IB = 0) 30 -30 V
Emitter-base voltage (IC = 0) 6 -6 V
Collector current 5 -5 A
C
Collector peak current (tP < 5 ms) 10 -10 A
Base current 1 -1 A
B
Base peak current (tP < 1 ms) 2 -2 A
Total dissipation at T
Total dissipation at T
Storage temperature -65 to 150
stg
Max. operating junction temperature 150
J
= 25 °C single operation 2 W
amb
= 25 °C couple operation 1.6 W
amb
Table 3. Thermal data
Symbol Parameter Value Unit
thj-amb
thj-amb
(1)
Thermal resistance junction-ambient (single operation) 62.5 °C/W
(1)
Thermal resistance junction-ambient (dual operation) 78 °C/W
R
R
1. When mounted on 1inch2 pad 2oz. copper, t < 10 sec
°C
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Page 3
STS05DTP03 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C; unless otherwise specified)
CASE
Table 4. Q1-NPN electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
(BR)CEO
V
CE(sat)
V
BE(sat)
h
FE
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5 %
Collector cut-off current
= 0)
(I
E
Collector cut-off current
= 0)
(I
B
Emitter cut-off current
= 0)
(I
B
Collector-emitter breakdown
(1)
voltage (IB = 0)
Collector-emitter saturation
(1)
voltage
Base-emitter saturation
(1)
voltage
(1)
DC current gain
V
= 30 V 10 µA
CB
V
= 30 V 1 µA
CE
V
= 6 V 10 µA
EB
I
= 10 mA 30 V
C
= 1 A IB = 10 mA
I
C
= 3 A IB = 100 mA
I
C
IC = 5 A IB = 250 mA
= 1 A IB = 10 mA 1.0 V
I
C
I
= 1 A V
C
= 3 A V
I
C
= 5 A V
I
C
IC = 10 A V
CE
CE
CE
CE
= 2 V
= 2 V
= 2 V
= 2 V
100
100
80
140
100
40
0.25
0.7
0.7
300
V
V
V
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Page 4
Electrical characteristics STS05DTP03
Table 5. Q2-PNP electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
(BR)CEO
V
CE(sat)
V
BE(sat)
h
FE
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5 %
Collector cut-off current
(IE = 0)
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IB = 0)
Collector-emitter breakdown
(1)
voltage (IB = 0)
Collector-emitter saturation
(1)
voltage
Base-emitter saturation
(1)
voltage
(1)
DC current gain
V
= -30 V -10 µA
CB
V
= -30 V -1 µA
CE
V
= -6 V -10 µA
EB
= -10 mA -30 V
I
C
= -1 A IB = -10 mA
I
C
= -3 A IB = -100 mA
I
C
= -5 A IB = -250 mA
I
C
= -1 A IB = -10 mA -1.0 V
I
C
I
= -1 A V
C
= -3 A V
I
C
IC = -5 A V
= -10 A V
I
C
CE
CE
CE
CE
= -2 V
= -2 V
= -2 V
= -2 V
100
100
80
140
100
40
-0.25
-0.7
-0.7
300
V
V
V
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Page 5
STS05DTP03 Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. DC current gain Q1 NPN transistor Figure 3. DC current gain Q1 NPN transistor
Figure 4. Collector-emitter saturation
voltage Q1 NPN transistor
Figure 6. Switching time resistive load Q1
NPN transistor
Figure 5. Base-emitter saturation voltage Q1
NPN transistor
Figure 7. Switching time resistive load Q1
NPN transistor
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Page 6
Electrical characteristics STS05DTP03
Figure 8. DC current gain Q2 PNP transistor Figure 9. DC current gain Q2 PNP transistor
Figure 10. Collector-emitter saturation
voltage Q2 PNP transistor
Figure 12. Switching time resistive load Q2
PNP transistor
Figure 11. Base-emitter saturation voltage
Q2 PNP transistor
Figure 13. Switching time resistive load Q2
PNP transistor
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Page 7
STS05DTP03 Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark
®
packages, depending on their level of environmental compliance. ECOPACK®
7/10
Page 8
Package mechanical data STS05DTP03
SO-8 mechanical data
Dim.
Min. Typ. Max.
mm
A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c0.17 0.23
D4.804.90 5.00
E5.80 6.00 6.20
E1 3.80 3.90 4.00
e1.27
h0.25 0.50
L0.40 1.27
L1 1.04
k0° 8°
ccc 0.10
8/10
0016023_D
Page 9
STS05DTP03 Revision history
4 Revision history
Table 6. Document revision history
Date Revision Changes
19-Mar-2009 1 First release
9/10
Page 10
STS05DTP03
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