Datasheet STRH8N10 Datasheet (ST)

Features

V

DSS

100 V 6 A 0.30 Ω 22 nC

■ Fast switching

■ 100% avalanche tested

■ Hermetic package

■ 70 krad TID

■ SEE radiation hardened

I

D

R

DS(on)

Applications

■ Satellite

■ High reliability

STRH8N10

Rad-Hard N-channel 100 V, 6 A

Power MOSFET

Q

g

TO-39

Figure 1. Internal schematic diagram

Description

This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET
has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.

Table 1. Device summary

Order code

STRH8N10N1 -

STRH8N10NG TBD ESCC flight Target

ESCC part

number

Note: Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

™

process. It

Quality

level

Engineering

model

Package

TO-39 Gold 1.2 -55 to 150°C

Lead

finish

Mass

(g)

Temp. range EPPL

-

November 2011 Doc ID 010029 Rev 2 1/18

www.st.com

18

Contents STRH8N10

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 010029 Rev 2

STRH8N10 Electrical ratings

1 Electrical ratings

(TC = 25°C unless otherwise specified)

Table 2. Absolute maximum ratings (pre-irradiation)

Symbol Parameter Value Unit

(1)

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt

T

1. This rating is guaranteed @ TJ > 25 °C (see Figure 10: Normalized BV

2. This value is guaranteed over the full range of temperature.

3. Rated according to the Rthj-case + Rthc-s.

4. Pulse width limited by safe operating area.

5. ISD ≤ 6 A, di/dt ≤ 1060 A/µs, VDD = 80% V

Drain-source voltage (VGS = 0)

(2)

Gate-source voltage ±20 V

(3)

Drain current (continuous) at TC= 25°C 6 A

(1)

Drain current (continuous) at TC= 100°C 4.1 A

(4)

Drain current (pulsed) 24 A

(1)

Total dissipation at TC= 25°C 25 W

(5)

Peak diode recovery voltage slope 6.4 V/ns

Storage temperature -55 to 150 °C

stg

T

Max. operating junction temperature 150 °C

j

(BR)DSS

DSS

100 V

vs temperature).

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 5.0 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

E

AS

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by Tj Max)

Single pulse avalanche energy

(1)

(starting Tj=25°C, Id=Iar, Vdd=50V)

Single pulse avalanche energy

AS

(starting Tj=110°C, Id=Iar, Vdd=50V)

4A

457 mJ

134 mJ

Doc ID 010029 Rev 2 3/18

Electrical ratings STRH8N10

Table 4. Avalanche characteristics (continued)

Symbol Parameter Value Unit

Repetitive avalanche

E

AR

(Vdd = 50 V, I
duty cycle = 10%)

Repetitive avalanche

E

(Vdd = 50 V, IAR = 4 A, f = 100 KHz, TJ = 110 °C,

AR

duty cycle = 10%)

1. Maximum rating value.

= 4 A, f = 100 KHz, TJ = 25 °C,

AR

4.3 mJ

1.4 mJ

4/18 Doc ID 010029 Rev 2

STRH8N10 Electrical characteristics

2 Electrical characteristics

(T

= 25°C unless otherwise specified).

CASE

2.1 Pre-irradiation

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

V

GS(th)

R

DS(on)

DSS

GSS

Zero gate voltage drain
current (V

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage

Static drain-source on
resistance

GS

= 0)

100% BV

80% BV
80% BV

V

GS

V

GS

V

GS

V

GS

V

DS

V

DS

Dss

Dss

Dss, TC

= 20 V
= -20 V
= 20 V, TC = 125 °C
= -20 V, TC = 125 °C

=VGS, ID = 1mA
=VGS, ID = 1mA

TC = 125 °C

=VGS, ID = 1mA

V

DS

TC = -55 °C

V

= 12 V, ID = 4 A

GS

= 12 V, ID = 4 A,

V

GS

TC = 125 °C

= 125 °C

,

,

-100

-200

2

1.5

2.1

1mA

10

100

µA

100

200

nA

4.5

3.7
V

5.5

0.30

0.72

Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

oss

C

C

oss eq.

Q
Q
Q

R

1. This value is guaranteed over the full range of temperature.

2. This value is defined as the ratio between the Q

3. Not tested, guaranteed by process.

Input capacitance

iss

Output capacitance

(1)

Reverse transfer

rss

capacitance

Equivalent output

(1)

capacitance

Total gate charge

g

Gate-to-source charge

gs

Gate-to-drain (“Miller”)

gd

charge

(3)

Gate input resistance

G

(2)

= 25 V, f=1 MHz,

V

DS

=0V

V

GS

527

76
31

659

95
39

791
114

47

VDD = 80 V, VGS=0V 162 pF

= 50 V, ID = 4 A,

V

DD

= 12 V

V

GS

18.5
3
4

5.5

22

4

5
7

15

f=1MHz gate DC bias=0
test signal level=20mV

1.6 Ω

open drain

and the voltage value applied.

oss

Doc ID 010029 Rev 2 5/18

pF
pF
pF

nC
nC
nC

Electrical characteristics STRH8N10

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

Table 8. Source drain diode

= 50 V, ID = 4 A,

V

DD

RG = 4.7 Ω, VGS = 12 V

(1)

6
4

13

3

10.5

10.5

21.5

5.5

15
17
30

8

Symbol Parameter Test conditions Min. Typ. Max Unit

I

I

SDM

V

SD

t

rr

Q

I

RRM

t

rr

Q

I

RRM

1. Refer to the Figure 16: Source drain diode.

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

4. Not tested in production, guaranteed by process.

Source-drain current

SD

(2)

Source-drain current (pulsed)

(3)

Forward on voltage

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

= 8 A, VGS = 0

I

SD

= 8 A, VGS = 0,

I

SD

TC = 125 °C

= 8 A, di/dt = 100

I

SD

A/µs

= 17 V, Tj = 25 °C

V

DD

= 8 A,

I

SD

di/dt = 100 A/µs, VDD=
17 V, Tj = 150 °C

196 245

1.2
10

282 352

1.7

10.5

6

24

1.5

1.275

294 ns

422 ns

ns
ns
ns
ns

A
A

V

µC

A

µC

A

6/18 Doc ID 010029 Rev 2

STRH8N10 Radiation characteristics

3 Radiation characteristics

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to radiative environments. Every manufacturing lot is tested for total ionizing dose, according
to the ESCC 22900 specification window 1, using the TO-39 package. Both pre-irradiation
and post-irradiation performances are tested and specified using the same circuitry and test
conditions in order to provide a direct comparison.

(T

= 22 ± 3 °C unless otherwise specified).

amb

Total dose radiation (TID) testing

One bias conditions using the TO-39 package:

–V

The following parameters are measured (see Table 9, Table 10 and Table 11):

● before irradiation

● after irradiation

● after 24 hrs @ room temperature

● after 168 hrs @ 100 °C anneal

bias: + 15 V applied and VDS= 0 V during irradiation

GS

Table 9. Post-irradiation on/off states @ T

= 25 °C, (Co60 γ rays 70 K Rad(Si))

J

Symbol Parameter Test conditions Drift values ∆ Unit

I

I

BV

V

GS(th)

R

DS(on)

DSS

GSS

DSS

Zero gate voltage drain current
(VGS = 0)

Gate body leakage current
(VDS = 0)

Drain-to-source breakdown
voltage

80% BV

V
V

V

Dss

= 20 V

GS

= -20 V

GS

= 0, ID = 1 mA -25% V

GS

+1 µA

1.5

-1.5

Gate threshold voltage VDS = VGS, ID = 1 mA -60% / + 30% V

Static drain-source on resistance VGS = 10 V; ID = 4 A ±10% Ω

Table 10. Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si))

Symbol Parameter Test conditions Drift values ∆ Unit

Q

Q

gs

Q

gd

Total gate charge

g

= 0.2 mA, VGS = 12 V,

I

Gate-source charge ±35%

G

VDS = 50 V, IDS = 4 A

Gate-drain charge -5% / + 130%

-5% / + 40%

nA

nC

Doc ID 010029 Rev 2 7/18

Radiation characteristics STRH8N10

Table 11. Source drain diode post-irradiation @ T

Rad(Si))

Symbol Parameter Test conditions Drift values ∆.Unit

(2)

V

SD

1. Refer to Figure 16.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage I

(1)

= 8 A, VGS = 0 ±2% V

SD

= 25 °C, (Co60 γ rays 70 K

J

Single event effect, SOA

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to heavy ion environment for single event effect according to MIL-STD-750E method 1080
(bias circuit in Figure 3: Single event effect, bias circuit) SEB and SEGR tests have been
performed with a fluence of 3e+5 ions/cm².

The accept/reject criteria are:

● SEB test: drain voltage checked, trigger level is set to V

soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².

● SEGR test: the gate current is monitored every 100 ms. A gate stress is performed

before and after irradiation. Stop condition: as soon as the gate current reaches 100 nA
(during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².

The results are:

– no SEB

– SEGR test produces the following SOA (see Table 12: Single event effect (SEE),

safe operating area (SOA) and Figure 2: Single event effect, SOA)

= - 5 V. Stop condition: as

ds

Table 12. Single event effect (SEE), safe operating area (SOA)

V

(V)

Energy

Ion

Let (Mev/(mg/cm

Kr 32 768 94 100 80 60 30 10

2

)

(MeV)

Range

(µm)

@V

=0 @VGS= -2 V @VGS= -5 V @VGS= -10 V @VGS= -20 V

GS

DS

8/18 Doc ID 010029 Rev 2

STRH8N10 Radiation characteristics

Figure 2. Single event effect, SOA

100

Kr (32 MeV .cm²/mg)

-20 -15 -10 -5 0

Vgs (V)

Figure 3. Single event effect, bias circuit

(a)

90

80

70

60

50

40

30

20

10

0

Vds (% Vdsmax)

a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) .

Doc ID 010029 Rev 2 9/18

Electrical characteristics (curves) STRH8N10

25°C

-55°C

15 0 °C

4 Electrical characteristics (curves)

Figure 4. Safe operating area Figure 5. Thermal impedance

Figure 6. Output characteristics Figure 7. Transfer characteristics

I

D

(A)

V

GS

= 10 V

25

HV33200

I

D

(A)

20

V

10.0

GS

= 7 V

15

V

GS

10

= 6 V

1.0

5

V

GS

= 5 V

0

0

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

V

GS

10

(V)

V

DS

= 50 V

I

D

20

= 8 A

V

DS

(V)

HV33210

12

0.1

3.50 4.00 4.50 5.00 5.50 6.00

C

(pF)

1000

10

8

D

= 4 A

I

100

6

4

I

D

= 2 A

10

2

0

0

10

5

15

20

Q

g

(nC)

1

0.1

1

10

VGS(V)

Ciss

Coss

Crss

V

HV33220

DS

(V)

10/18 Doc ID 010029 Rev 2

STRH8N10 Electrical characteristics (curves)

Figure 10. Normalized BV

vs temperature Figure 11. Static drain-source on resistance

DSS

Figure 12. Normalized gate threshold voltage

vs temperature

R

DS(on)

(mΩ)

800

VGS=12 V

700

600

500

400

300

200

100

0

1 3

24

567

I

Figure 13. Normalized on resistance vs

temperature

D

(A)

HV33240

Figure 14. Source drain-diode forward

characteristics

V

SD

(V)

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6
1

2

j =

-50 °C

T

T

j =

25 °C

T

j =

150 °C

4

3

6

5

7

HV33270

I

SD

(A)

Doc ID 010029 Rev 2 11/18

Test circuit STRH8N10

5 Test circuit

Figure 15. Switching times test circuit for resistive load

1. Max driver V

Figure 16. Source drain diode

slope = 1V/ns (no DUT)

GS

(1)

12/18 Doc ID 010029 Rev 2

STRH8N10 Test circuit

Figure 17. Unclamped inductive load test circuit (single pulse and repetitive)

Doc ID 010029 Rev 2 13/18

Package mechanical data STRH8N10

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

14/18 Doc ID 010029 Rev 2

STRH8N10 Package mechanical data

Table 13. TO-39 mechanical data

mm Inch

Dim.

Min. Typ. Max. Min. Typ. Max.

A 12.70

B 0.40 0.49 0.016 0.019

C 0.58 0.74 0.023 0.029

D 6.00 6.40 0.237 0.252

E 8.15 8.25 0.358 0.362

F 9.10 9.20 0.358 0.362

G 4.93 5.23 0.194 0.206

H 0.85 0.95 0.033 0.037

I 0.75 0.85 0.029 0.033

L 42° 48°

Figure 18. TO-39 drawing

14.20 0.500

-

-

0.559

Doc ID 010029 Rev 2 15/18

Order codes STRH8N10

7 Order codes

Table 14. Ordering information

Order code

STRH8N10N1 -

STRH8N10NG TBD ESCC flight Target TBD

ESCC part

number

Quality

level

Engineering

model

EPPL Package

­TO-39 Gold

Lead

finish

Marking Packing

STRH8N10N1

Strip
pack

Contact ST sales office for information about the specific conditions for products in die form
and other package options.

16/18 Doc ID 010029 Rev 2

STRH8N10 Revision history

8 Revision history

Table 15. Document revision history

Date Revision Changes

20-May-2011 1 First release.

09-Nov-2011 2

Updated dynamic values on Table 6: Dynamic, Table 7: Switching

times.

Doc ID 010029 Rev 2 17/18

STRH8N10

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18/18 Doc ID 010029 Rev 2