Datasheet STPS60H100C Datasheet (ST)

Main product characteristics

STPS60H100C

Power Schottky rectifier

I

2 x 30 A

F(AV)

V

RRM

T

j

V

0.72 V

F(max)

100 V

175° C

Feature and benefits

■ High junction temperature capability

■ Low leakage current

■ Low thermal resistance

■ High frequency operation

■ Avalanche specification

Description

Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device
combines high current rating and low volume to
enhance both reliability and power density of the
application.

Table 1. Absolute ratings (limiting values)

A1

A2

K

K

K

A1

TO-220AB

STPS60H100CT

Order code

Part Number Marking

STPS60H100CT STPS60H100CT

A2

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

stg

T

Repetitive peak reverse voltage 100 V

RMS forward current 60 A

Average forward current

Tc = 150° C
δ = 0.5

Per diode
Per device

Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 18100 W

Storage temperature range -65 to + 175 ° C

Maximum operating junction temperature

j

(1)

175 ° C

30
60

A

dV/dt Critical rate of rise of reverse voltage 10000 V/μs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

1

--------------------------

<

Rth j a–()

February 2007 Rev 2 1/7

www.st.com

7

Characteristics STPS60H100C

1 Characteristics

Table 2. Thermal resistances

Symbol Parameter Value Unit

R

R

th(j-c)

th(c)

Junction to case

Per diode
To ta l

Coupling 0.4

1.0

0.7

° C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode 1) x R

Table 3. Static electrical characteristics (per diode)

Symbol Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test : tp = 5 ms, δ < 2%

2. Pulse test : tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :
P = 0.6 x I

Reverse leakage current

R

(2)

Forward voltage drop

F

+ 0.004 IF

F(AV)

2

(per diode) + P(diode 2) x R

th(j-c)

T

= 25° C

j

T

= 125° C 3 10 mA

j

= 25° C IF = 30 A 0.84

T

j

T

= 125° C IF = 30 A 0.67 0.72

j

= 25° C IF = 60 A 0.92 0.98

T

j

= 125° C IF = 60 A 0.8 0.84

T

j

(RMS)

th(c)

210µA

= V

V

R

RRM

V

2/7

STPS60H100C Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per
diode)

P (W)

F(AV)

26

24

22

20

18

16

14

12

10

8

6

4

2

0

0 5 10 15 20 25 30 35

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

I (A)

F(AV)

35

R=R

30

25

20

15

10

5

0

0 25 50 75 100 125 150 175

δ

=tp/T

T

tp

th(j-a) th(j-c)

R =15°C/W

th(j-a)

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

0 25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration

I (A)

M

400

350

300

250

T =50°C

200

150

100

IM

50

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

C

T =75°C

C

T =125°C

C

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

3/7

t (s)

p

Characteristics STPS60H100C

Figure 7. Reverse leakage current versus

reverse voltage applied (typical
values)

I (mA)

R

1.E+02

T=150°C

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

0 102030405060708090100

j

T=125°C

j

T=100°C

j

T=75°C

j

T=50°C

j

T=25°C

j

V (V)

R

Figure 9. Forward voltage drop versus

forward current

I (A)

FM

100

T=125°C

j

(maximum values)

T=25°C

j

T=125°C

j

(typical values)

(maximum values)

Figure 8. Junction capacitance versus

reverse voltage applied (typical
values)

C(nF)

10.0

1.0

V (V)

0.1

1 10 100

R

F=1MHz

V =30mV

OSC RMS

T=25°C

j

10

V (V)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

FM

4/7

STPS60H100C Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

● Recommended torque value: 0.8 Nm

● Maximum torque value: 1.0 Nm

Figure 10. Package dimensions TO-220AB

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

H2

Dia

L5

L6

L2

F2

F1

F

G1

L9

L4

G

A

C

L7

D

M

E

D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

G1 2.40 2.70 0.094 0.106

H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645 typ.

L4 13 14 0.511 0.551

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.20 6.60 0.244 0.259

L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam. 3.75 3.85 0.147 0.151

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

5/7

Ordering information STPS60H100C

3 Ordering information

Ordering type Marking Package Weight Base qty Delivery mode

STPS60H100CT STPS60H100CT TO-220AB 2.20 g 50 Tube

4 Revision history

Date Revision Description of Changes

02-Aug-2004 1 First issue

Reformatted to current stndards. Added ECOPACK

07-Feb-2007 2

statement on page 5. Corrected typograhical errors on
pages 1 and 3

6/7

STPS60H100C

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2007 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

7/7