Datasheet STPS5045S Datasheet (ST)

STPS5045S

Power Schottky rectifier

Datasheet − production data

Features

■ Low forward voltage drop

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ 200 °C maximum junction temperature

■ Avalanche rated

Description

This device is a dual center tap Schottky rectifier
suited for switch mode power supply and high
frequency DC to DC converters.

Packaged in D
intended for use in low voltage, high frequency
inverters, freewheeling and polarity protection
applications. Also ideal for PV cell-bypass diode
for junction and smart junction boxes.

2

PAK, this device is especially

A

A

K

A

A

D2PAK

STPS5045SG-TR

j

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 200 °C

j

(max) 0.48 V

V

F

K

50 A

45 V

June 2012 Doc ID022861 Rev 1 1/7

This is information on a product in full production.

www.st.com

7

Characteristics STPS5045S

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

T

1. condition to avoid thermal runaway for a diode on its own heatsink

2. Maximum operating junction temperature only in DC forward mode

Table 3. Thermal resistance

Repetitive peak reverse voltage 45 V

RRM

Forward rms current 90 A

Average forward current δ = 0.5 Tc = 135 °C 50 A

Surge non repetitive forward current tp = 10 ms sinusoidal 600 A

FSM

Repetitive peak avalanche power tp = 10 µs Tj = 125 °C 1200 W

ARM

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature in DC forward mode

(1)

j

Maximum operating junction temperature +175 °C

<

Rth(j-a)

1

dPtot

dTj

(2)

+200 °C

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 1.0 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(2)

Forward voltage drop

F

= 25 °C VR = V

T

j

= 75 °C VR = 20 V 0.7 1.9

j

= 125 °C VR = V

T

j

= 25 °C

T

j

T

= 125 °C 0.48 0.56

j

T

= 200 °C

j

RRM

RRM

= 50 A

I

F

I

= 10 A 0.22

F

=20 A 0.28

I

F

0.090 0.36

65 185

0.55 0.61

mAT

V

To evaluate the conduction losses use the following equation:
P = 0.38 x I

2/7 Doc ID022861 Rev 1

F(AV)

+ 0.0036 I

F2(RMS)

STPS5045S Characteristics

0

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Average forward current versus

ambient temperature
(δ = 0.5)

I (A)

P (W)

F(AV)

45

40

35

30

25

20

15

10

5

0

δ = 0.05

0 1020304050 6070

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

δ = 1

T

=tp/T

Figure 3. Normalized avalanche power

derating versus pulse duration

tp

F(AV)

60

R

50

40

30

20

10

0

T

t

=t /T

δ

0 25 50 75 100 125 150 175

p

p

th(j-a)=Rth(j-c)

T (°C)

amb

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

P(t)

ARM p

P (10µs)

ARM

1

0.1

0.01

t (µs)

0.001
1 10 100 100

p

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Doc ID022861 Rev 1 3/7

Characteristics STPS5045S

Figure 5. Reverse leakage current versus

reverse voltage applied
(typical values)

I (mA)

R

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03
0 5 10 15 20 25 30 35 40 45

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

V (V)

R

Figure 6. Junction capacitance versus

reverse voltage applied
(typical values)

C(pF)

10000

1000

100

1 10 100

V

F=1MHz

osc

Tj=25°C

=30mV

V (V)

RMS

R

Figure 7. Forward voltage drop versus

forward current

I (A)

FM

1000.0

Tj=125°C

(Typical values)

100.0

Tj=200°C

(Typical values)

10.0

1.0

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Tj=125°C

(Maximum values)

Tj=25°C

(Maximum values)

V (V)

FM

Figure 8. Thermal resistance junction to

ambient versus copper surface
under tab

R (°C/W)

th(j-a)

80

epoxy printed circuit board FR4, copper thickness = 35 µm, D PAK

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

S(Cu)(cm²)

2

4/7 Doc ID022861 Rev 1

STPS5045S Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 5. D

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

2

PAK dimensions

.

Dimensions

Ref

Millimeters Inches

Min. Max. Min. Max.

A

L2

E

C2

A 4.40 4.60 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

L

L3

G

A1

B2

B

C

A2

D

R

B 0.70 0.93 0.027 0.037

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

M

*

V2

* FLAT ZONE NO LESSTHAN 2mm

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Figure 9. Footprint (dimensions in millimeters)

16.90

10.30

8.90

Doc ID022861 Rev 1 5/7

3.70

5.08

1.30

Ordering information STPS5045S

3 Ordering information

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode

2

STPS5045SG-TR STPS5045SG D

PAK 1.48 g 1000 Tape and reel

4 Revision history

Table 7. Revision history

Date Revision Changes

28-June-2012 1 First issue.

6/7 Doc ID022861 Rev 1

STPS5045S

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Doc ID022861 Rev 1 7/7