Datasheet STPS3L60U, STPS3L60RL, STPS3L60QRL, STPS3L60Q Datasheet (SGS Thomson Microelectronics)

®

MAIN PRODUCT CHARACTERISTICS

STPS3L60/Q/U

POWER SCHOTTKY RECTIFIER

I

F(AV)

V

RRM

3A

60 V

Tj (max) 150°C

(max) 0.61 V

V

F

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

■

LOW THERMAL RESISTANCE

■

AVALANCHE CAPABILITY SPECIFIED

■

DO-201AD
STPS3L60

DO-15

STPS3L60Q

DESCRIPTION

Axial and Surface Mount Power Schottky rectifier
suited for Switch Mode Power Supplies and high
frequency DC to DC converters. Packaged in
DO-201AD, DO-15 and SMB, this device is
intended for use in low voltage, high frequency
inverters and small battery chargers.

SMB

STPS3L60U

For applications where there are space
constraints, e.g Telecom battery charger.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage
RMS forward current
Average forward current TL= 105°C δ = 0.5

60 V
10 A

3A

(DO-201AD, SMB)
T

= 75°C δ = 0.5

L

(DO-15)

I

FSM

P

ARM

T

stg

T

j

dV/dt

Surge non repetitive forward current tp= 10 ms Sinusoidal
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage

100 A

2000 W

- 65 to + 150 °C
150 °C

10000 V/µs

dPtot

*:

<

dTj Rth j a

July 2003 - Ed: 5A

thermal runaway condition for a diode on its ownheatsink

−1()

1/6

STPS3L60/Q/U

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-l)

Junction to leads Lead length = 10 mm DO-201AD

SMB
DO-15

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

*

R

V

F

Pulse test : * tp = 380 µs, δ <2%

Reverse leakage current Tj= 25°C VR=V

= 100°C

T

j

= 125°C

T

j

*

Forward voltage drop Tj= 25°C IF=3A

= 100°C

T

j

= 125°C

T

j

= 25°C IF=6A

T

j

= 100°C

T

j

= 125°C

T

j

RRM

20 °C/W
20
35

150 µA

415mA

14 30

0.62 V

0.53 0.61

0.51 0.59

0.79

0.62 0.71

0.6 0.69

To evaluate the maximum conduction losses use the following equation:
P=0.44xI

Fig. 1: Average forward power dissipation versus
average forward current.

P (W)

F(AV)

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

F(AV)

δ = 0.05

+0.05xI

δ = 0.1

δ = 0.2

I (A)

F(AV)

F2(RMS)

δ = 0.5

δ

=tp/T

δ = 1

T

Fig. 2-1: Average forward current versus ambient
temperature (δ = 0.5) (DO-201AD, SMB).

I (A)

F(AV)

3.5

3.0

2.5

2.0

1.5

1.0

tp

0.5

0.0

T

=tp/T

δ

0 25 50 75 100 125 150

tp

R=R

th(j-a) th(j-I)

R =80°C/W

th(j-a)

T (°C)

amb

2/6

STPS3L60/Q/U

Fig. 2-2: Average forward current versus ambient

temperature (δ = 0.5) (DO-15).

I (A)

F(AV)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

R=R

th(j-a) th(j-I)

R =100°C/W

th(j-a)

T

T (°C)

=tp/T

δ

0 25 50 75 100 125 150

tp

amb

Fig. 4: Normalized avalanche power derating

versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

T (°C)

j

Fig. 3: Normalized avalanche power derating

versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (DO-201AD, SMB).

I (A)

M

12

10

T =25°C

8

6

4

IM

2

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

a

T =50°C

a

T =100°C

a

Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (DO-15).

I (A)

M

11
10

9
8
7
6
5
4
3

IM

2
1
0

1.E-03 1.E-02 1.E-01

δ=0.5

t

t(s)

T =25°C

a

T =50°C

a

T =100°C

a

Fig. 6-1: Relative variation of thermal impedance
junction to ambient versus pulse duration
(DO-201AD, SMB).

Z/R

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

0.0
1E-1 1E+0 1E+1 1E+2 1E+3

Single pulse

t (s)

p

δ

=tp/T

T

tp

3/6

STPS3L60/Q/U

Fig. 6-2: Relative variation of thermal impedance

junctiontoambient versus pulseduration(DO-15).

Z/R

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Single pulse

t (s)

p

δ

=tp/T

T

tp

Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).

C(pF)

500

200

100

F=1MHz
T=25°C

j

Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).

I (mA)

R

5E+1

T=125°C

1E+1

1E+0

1E-1

1E-2

1E-3

0 5 10 15 20 25 30 35 40 45 50 55 60

j

T=100°C

j

T=25°C

j

V (V)

R

Fig. 9-1: Forward voltage drop versus forward

current (high level, maximum values).

I (A)

FM

30

10

(maximum values)

T=100°C

j

(typical values)

T=100°C

j

T=25°C

j

50

20

V (V)

10

1 10 100

R

Fig. 9-2: Forward voltage drop versus forward

current (low level, maximum values).

I (A)

FM

5

4

3

(typical values)

2

1

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T=100°C

j

T=100°C

j

(maximum values)

V (V)

FM

T=25°C

j

V (V)

1

0.0 0.5 1.0 1.5 2.0 2.5

FM

Fig. 10: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35µm) (SMB).

R (°C/W)

th(j-)

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(Cu)(cm²)

4/6

PACKAGE MECHANICAL DATA

DO-15 plastic

STPS3L60/Q/U

REF.

Min. Max. Min. Max.

A 6.05 6.75 0.238 0.266
B 2.95 3.53 0.116 0.139
C 26 31 1.024 1.220
D 0.71 0.88 0.028 0.035

PACKAGE MECHANICAL DATA

DO-201AD plastic

A

CC

D

B

DIMENSIONS

Millimeters Inches

BA

note 1

E

ØD ØD

DIMENSIONS

REF.

Min. Max. Min. Max.

A 9.50 0.374
B 25.40 1.000

∅ C 5.30 0.209
∅ D 1.30 0.051

E 1.25 0.049

note 2

B

note 1

E

ØC

NOTESMillimeters Inches

1 - The lead diameter ∅ D is not controlled over zoneE
2 - The minimum axial length within which the device

may be placed with its leads bent at right anglesis

0.59"(15 mm)

5/6

STPS3L60/Q/U

PACKAGE MECHANICAL DATA

SMB (JEDEC DO-214AA)

E1

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

D

E

A1

C

L

A2

FOOT PRINT DIMENSIONS (in millimeters)

2.3

1.52 2.75

1.52

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

b

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

Ordering type Marking Package Weight Base qty Delivery mode

STPS3L60 STPS3L60 DO-201AD 1.12g 600 Ammopack

STPS3L60RL STPS3L60 DO-201AD 1.12g 1900 Tape & Reel

STPS3L60Q STPS3L60 DO-15 0.4 g 1000 Ammopack

STPS3L60QRL STPS3L60 DO-15 0.4 g 6000 Tape & Reel

STPS3L60U G36 SMB 0.107 g 2500 Tape & Reel

■

White band indicates cathode

■

Epoxy meets UL94,V0

Informationfurnished is believedto be accurateandreliable. However, STMicroelectronicsassumes no responsibilityfor the consequencesof
useof such informationnor for anyinfringement of patentsor other rightsof third partieswhich may resultfrom its use.No license isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

© 2003 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany

Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore

Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

6/6