Datasheet STPS30M120S Datasheet (ST)

STPS30M120S

Power Schottky rectifier

Datasheet − production data

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop

■ High frequency operation

Description

This Schottky diode is suited for high frequency
switch mode power supply.

2

Packaged in TO-220AB narrow leads and I
this device is intended to be used in notebook,
game station and desktop adapters, providing in
these applications a good efficiency at both low
and high load.

Figure 1. Electrical characteristics

2 x I

I

"Forward"

O

V

I

PA K,

(a)

X

A

A

K

K

A

A

K

TO-220AB narrow leads

STPS30M120STN

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(typ) 0.45 V

V

F

(max) 150 °C

T

j

K

A

A

K

I2PAK

STPS30M120SR

30 A

120 V

I

F

I

V

RRM

V

V

a. V

ARM

operating area defined in Figure 9. V
pulse measurements (t
V

, are static characteristics

F

AR

and I

R

"Reverse"

must respect the reverse safe

ARM

O

< 10 µs). VR, IR, V

p

I

R

V

To

I

AR

V

F(Io)

AR

X

V

V

V

F(2xIo)

F

and IAR are

and

RRM

April 2012 Doc ID 022918 Rev 1 1/8

This is information on a product in full production.

www.st.com

8

Characteristics STPS30M120S

1 Characteristics

Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at

T

= 25 °C, unless otherwise specified)

amb

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

V

ASM

T

1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.

2. See Figure 9

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 120 V

RRM

Forward rms current 50 A
Average forward current, δ = 0.5 Tc = 110 °C 30 A

Surge non repetitive forward current tp = 10 ms sine-wave 260 A

(1)

Repetitive peak avalanche power Tj = 125 °C, tp = 10 µs 1450 W

Maximum repetitive peak

(2)

avalanche voltage

Maximum single-pulse

(2)

peak avalanche voltage

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

t

< 10 µs, Tj < 125 °C, IAR < 9.7 A 150 V

p

< 10 µs, Tj < 125 °C, IAR < 9.7 A 150 V

t

p

(3)

150 °C

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)

Junction to case 1.3 °C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

R

current

Reverse leakage

(1)

I

= 25 °C

j

= 125 °C - 25 65 mA

T

j

V

= V

R

RM

- 70 345 µA

Tj = 125 °C IF = 5 A - 0.45 0.50

= 10 A

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

T

= 125 °C

j

T

= 25 °C

j

= 125 °C - 0.57 0.62

T

j

= 25 °C

T

j

= 125 °C - 0.66 0.73

T

j

I

F

I

= 15 A

F

I

= 30 A

F

- 0.52 0.57

-0.75

-0.90

V

To evaluate the conduction losses use the following equation:
P = 0.53 x I

2/8 Doc ID 022918 Rev 1

+ 0.0067 x I

F(AV)

F2(RMS)

STPS30M120S Characteristics

Figure 2. Average forward power dissipation

versus average forward current

P (W)

F(AV)

35

30

25

20

15

10

δ = 0.1

δ = 0.05

δ = 0.2

δ = 0.5

δ = 1

T

5

0

0 5 10 15 20 25 30 35 40

δ = t / T

p

t

p

I (A)

F(AV)

Figure 4. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (10 µs)

ARM

1

0.1

0.01

t (µs)

0.001

p

1 10 100 1000

Figure 6. Reverse leakage current versus

reverse voltage applied
(typical values)

I (mA)

R

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03
0 102030405060708090100110120

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

V (V)

R

Figure 3. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

35

30

25

20

15

10

5

0

0 25 50 75 100 125 150

R

th(j-a)

T (°C)

amb

= R

th(j-c)

Figure 5. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 7. Junction capacitance versus

reverse voltage applied
(typical values)

C(pF)

10000

1000

100

1 10 100 1000

V

F=1MHz

osc

Tj=25°C

=30mV

V (V)

RMS

R

Doc ID 022918 Rev 1 3/8

Characteristics STPS30M120S

Figure 8. Forward voltage drop versus

forward current

I (A)

FM

1000.0

Tj=125°C

100.0

10.0

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

(Maximum values)

Tj=125°C

(Typical values)

Tj=25°C

(Maximum values)

V (V)

FM

Figure 9. Reverse safe operating area

(t

< 10 µs and Tj < 125 °C)

p

I (A)

arm

12.5

12.0

11.5

11.0

10.5

10.0

9.5

9.0

8.5

8.0
120 130 140 150 160 170

V (V)

arm

4/8 Doc ID 022918 Rev 1

STPS30M120S Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

● Recommended torque value: 0.4 to 0.6 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 5. TO-220AB narrow leads dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.40 4.60 0.17 0.18

b 0.61 0.88 0.024 0.034

b1 0.95 1.20 0.037 0.047

c 0.48 0.70 0.019 0.027

D 15.25 15.75 0.60 0.62

D1 1.27 0.05

E 10.00 10.40 0.39 0.41

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.19 0.20

F 1.23 1.32 0.048 0.052

L20

b1(x3)

E

P

Q

D

L30

L1

L

A

F

H1

D1

J1

1

23

e

e1

b (x3)

H1 6.20 6.60 0.24 0.26

C

J1 2.40 2.72 0.095 0.107

L 13.00 14.00 0.51 0.55

L1 2.60 2.90 0.102 0.114

L20 15.40 0.61

L30 28.90 1.14
∅P 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

Doc ID 022918 Rev 1 5/8

Package information STPS30M120S

Devices in I2PAK with nickel-plated back frame must NOT be mounted by frame soldering
like SMDs. Such devices are intended to be through-hole mounted ONLY and in no
circumstances shall ST be held liable for any lack of performance or damage arising out of
soldering of nickel-plated back frames.

Table 6. I2PAK dimensions

Dimensions

L2

Ref.

Millimeters Inches

Min. Max. Min. Max.

A

E

c2

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.035

D

b1 1.14 1.70 0.044 0.067

c 0.49 0.70 0.019 0.028

L1

L

b1

A1

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.195 0.203

b

e

e1

c

E 10 10.40 0.394 0.409

L 13 14 0.512 0.551

L1 3.50 3.93 0.138 0.155

L2 1.27 1.40 0.050 0.055

6/8 Doc ID 022918 Rev 1

STPS30M120S Ordering information

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

2

STPS30M120SR PS30M120SR I

PAK 1.49 g 50 Tube

STPS30M120STN PS30M120STN

4 Revision history

Table 8. Document revision history

Date Revision Changes

02-Apr-2012 1 First issue.

TO-220AB

narrow leads

1.9 g 50 Tube

Doc ID 022918 Rev 1 7/8

STPS30M120S

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8/8 Doc ID 022918 Rev 1