Datasheet STPS30L60CW Datasheet (SGS Thomson Microelectronics)

Page 1
®
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
2 x 15 A
60 V
Tj (max) 150°C
V
(max) 0.56 V
F
FEATURES AND BENE FITS
NEGLIGIBLE SWITCHING LOSSE S LOW FORWARD V O LTAGE DROP LOW THERMAL RE SISTA NCE
STPS30L60CW
POWER SCHOTTKY RECTIFIER
A1
K
A2
A2
K
A1
Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in
TO-247
TO-247 this device is intended for use in high
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Tj
dV/dt
dPtot
* :
dTj
Repetitive peak reverse voltage RMS forward current Average forward current Tc = 130°C
δ = 0.5
Per diode
Per device Surge non repetitive forward current tp = 10 ms Sinusoidal Repetitive peak reverse current tp=2 µs square F=1kHz Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
60 V 30 A 15
30
230 A
2A
- 65 to + 175 °C 150 °C
10000 V/µs
A
July 1999 - Ed: 1A
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Page 2
STPS30L60CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Per diode
Total
Coupling 0.1 °C/W
1.5
0.8
When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
°C/W
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj = 25°CI
Tj = 25°CV Tj = 125°C
Tj = 125°CI Tj = 25°CI Tj = 125°CI
= V
R
= 15 A
F
= 15 A
F
= 30 A
F
= 30 A
F
RRM
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation : P = 0.42 x I
Fig. 1: Average forward power dis sipation versus average forward current (per diode).
PF(av)(W)
12 10
8 6 4 2 0
0 2 4 6 8 101214161820
F(AV)
δ = 0.05
+ 0.009 I
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
Fig. 2: Average forward current versus ambient temperature(δ = 0.5, per diode).
IF(av)(A)
18 16 14 12 10
8
T
tp
6 4 2 0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
480 µA
77 130 mA
0.6 V
0.5 0.56
0.75
0.65 0.7
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
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Page 3
STPS30L60CW
Fig. 3: Non repetitive surge peak forward
current versus overload duration (maximum values, per diode).
IM(A)
250
200
150
100
I
M
50
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode).
IR(mA)
5E+2 1E+2
1E+1
1E+0
1E-1
1E-2
0 5 10 15 20 25 30 35 40 45 50 55 60
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0 1E-4 1E-3 1E-2 1E-1 1E+0
tp(s)
Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(nF)
2.0
1.0
0.5
0.2
VR(V)
0.1
1 10 100
F=1MHz Tj=25°C
Fig. 7: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
200 100
10
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Typical values
Tj=150°C
Tj=125°C
Tj=25°C
VFM(V)
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Page 4
STPS30L60CW
PACKAGE ME CHANICAL D AT A
TO-247
V
V
H
L5
L
F2
F4
L1
F3
L3
F1
V2
F(x3)
G
= =
Dia.
L4L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133
G 10.90 0.429 H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118 V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N
Ordering type Marking Package Weight B ase q ty
Delivery
mode
STPS30L60CW STPS30L60CW TO-247 4.4g 50 Tube STPS30L60CW STPS30L60CW TO-247 4.4g 1000 Bulk
Epoxy meets UL94,V0
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