Datasheet STPS3045C-Y Datasheet (ST)

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Page 1

STPS3045C-Y

Automotive power Schottky rectifier

Features

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ Avalanche rated

■ AEC-Q101 qualified

Description

This device is a dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.

Packaged in D intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

PAK, this device is especially

D2PAK

STPS3045CGY

Table 1. Device summary

2 x 15 A

F(AV)

RRM

175 °C

j (max)

F (max)

45 V

0.57 V

May 2011 Doc ID 17264 Rev 1 1/7

www.st.com

Page 2

Characteristics STPS3045C-Y

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

RRM

F(RMS)

F(AV)

FSM

ARM

Repetitive peak reverse voltage 45 V

Forward rms voltage 30 A

Average forward current δ = 0.5 T

Surge non repetitive forward current t

= 155 °C

= 10 ms sinusoidal 220 A

Per diod e Per device

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 6000 W

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

(1)

-40 to +175 °C

10 30

dV/dt Critical rate of rise reverse voltage 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance parameters

------------------------- -

Rth j a–()

Symbol Parameter Value Unit

Junction to case

th (j-c)

th (c)

Coupling 0.10 ° C/W

Per diod e To t al

1.60

0.85

° C/W

When the diodes 1 and 2 are used simultaneously :

ΔT

(diode 1) = P(diode1) x R

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

= 25 °C

(1)

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

(1)

Forward voltage drop

= 125 °C - 11 40 mA

= 125 °C IF = 15 A - 0.5 0.57

= 25 °C

= 125 °C - 0.65 0.72

To evaluate the conduction losses use the following equation:

P = 0.42 x I

2/7 Doc ID 17264 Rev 1

F(AV)

+ 0.01 I

F2(RMS)

= V

= 30 A

RRM

--200µA

- - 0.84

V T

Page 3

STPS3045C-Y Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

02468101214161820

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

=tp/T

δ = 1

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

0.1

0.01

t (µs)

0.001

0.10.01 1

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

=tp/T

0 25 50 75 100 125 150 175

R =15°C/W

th(j-a)

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction temperature

P(T)

ARM

P (25°C)

ARM

1.2

0.8

0.6

0.4

0.2

25 50 75 100 125 150

T (°C)

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

I (A)

200

180

160

140

120

100

1.E-03 1.E-02 1.E-01 1.E+00

=0.5

t(s)

T =75°C

T =100°C

T =125°C

Doc ID 17264 Rev 1 3/7

Figure 6. Relative variation of thermal

impedance junction to ambient versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

δ = 0.2

0.4

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

=tp/T

Page 4

Characteristics STPS3045C-Y

Figure 7. Reverse leakage current versus

reverse voltage applied (typical values, per diode)

I (µA)

1.E+05

T=150°C

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

0 5 10 15 20 25 30 35 40 45

T=125°C

T=100°C

T=75°C

T=50°C

T=25°C

V (V)

Figure 9. Forward voltage drop versus

forward current (maximum values, per diode)

I (A)

1000

T =125°C

(maximum values)

100

T =125°C

(typical values)

T =25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

(maximum values)

V (V)

Figure 8. Junction capacitance versus

reverse voltage applied (typical values, per diode)

C(nF)

10000

1000

V (V)

100

1 10 100

F=1MHz

V =30mV

OSC RMS

T=25°C

Figure 10. Thermal resistance junction to

ambient versus copper surface under tab

R (°C/W)

th(j-a)

0 5 10 15 20 25 30 35 40

Epoxy printed circuit board, copper thickness = 35 µm

S(cm²)

4/7 Doc ID 17264 Rev 1

Page 5

STPS3045C-Y Package information

2 Package information

● Epoxy meets UL94,V0

● Lead-free package

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK

Table 5. Package dimensions D

packages, depending on their level of environmental compliance. ECOPACK®

is an ST trademark.

PAK

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

* FLAT ZONE NO LESSTHAN 2mm

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

Figure 11. Footprint dimensions (in millimeters)

16.90

10.30

8.90

Doc ID 17264 Rev 1 5/7

3.70

V2 0° 8° 0° 8°

5.08

1.30

Page 6

Ordering information STPS3045C-Y

3 Ordering information

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPS3045CGY-TR STPS3045CGY D

PAK 1.48 g 1000 Tape and reel

4 Revision history

Table 7. Document revision history

Date Revision Changes

24-May-2011 1 Initial release.

6/7 Doc ID 17264 Rev 1

Page 7

STPS3045C-Y

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Doc ID 17264 Rev 1 7/7