Datasheet STPS2545C-Y Datasheet (ST)

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Page 1

Features

STPS2545C-Y

Automotive power Schottky rectifier

Datasheet − production data

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ Avalanche capability specified

■ AEC-Q101 qualified

Description

Dual center tab Schottky rectifier suited for high frequency DC to DC converters.

This device is especially intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.

D2PAK

STPS2545CGY

Table 1. Device summary

F(AV)

RRM

j (max)

F(max)

2 x 12.5 A

45 V

175 °C

0.57 V

June 2012 Doc ID 17260 Rev 2 1/7

This is information on a product in full production.

www.st.com

Page 2

Characteristics STPS2545C-Y

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

F(RMS)

F(AV)

FSM

RRM

RSM

Repetitive peak reverse voltage 45 V

RRM

Forward rms current 30 A

Average forward current δ = 0.5 T

Surge non repetitive forward current t

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

ARM

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

=160 °C Per diode 12.5 A

= 10 ms sinusoidal 200 A

= 2 µs square F=1 kHz

= 100 µs square

= 1 µs Tj = 25 °C

(1)

-40 to +175 °C

1 A

4800 W

dV/dt Critical rate of rise reverse voltage 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistances

--------------------------

Rth j a–()

Symbol Parameter Value Unit

Per diode 1.6 °C/W

Junction to case

th (j-c)

th (c)

Coupling 0.6 °C/W

Total 1.1 °C/W

When the diodes 1 and 2 are used simultaneously:

ΔT

(diode 1) = P(diode1) x R

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

= 25 °C

(1)

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

(1)

Forward voltage drop

= 125 °C - 9 25 mA

= 125 °C IF = 12.5 A - 0.50 0.57

= 25 °C IF = 25 A - - 0.84

= 125 °C IF = 25 A - 0.65 0.72

To evaluate the conduction losses use the following equation: P = 0.42 x I

2/7 Doc ID 17260 Rev 2

+ 0.012 x I

F(AV)

F2(RMS)

= V

RRM

V T

--125µA

Page 3

STPS2545C-Y Characteristics

Figure 1. Conduction losses versus average

current)

P (W)F(AV)

0.0 2.5 5.0 7.5 10.0 12.5 15.0

δ = 0.05

δ = 0.1

I (A)F(AV)

δ = 0.2

δ = 0.5

=tp/T

δ = 1

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

0.1

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)F(AV)

0 25 50 75 100 125 150 175

=tp/T

Rth

=Rth

(j-a)

(j-c)

Rth

=50°C/W

(j-a)

T (°C)amb

Figure 4. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

0.8

0.6

0.01

t (µs)

0.001

0.10.01 1

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

I (A)M

200

180

160

140

120

100

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t(s)

TC=25°C

TC=75°C

TC=125°C

0.4

0.2

25 50 75 100 125 150

T (°C)

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration

Zth(j-c) / Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

=tp/T

Doc ID 17260 Rev 2 3/7

Page 4

Characteristics STPS2545C-Y

Figure 7. Reverse leakage current versus

reverse voltage applied (typical values)

I (mA)R

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03 0 5 10 15 20 25 30 35 40 45

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

V (V)R

Figure 9. Forward voltage drop versus

forward current

I (A)

100

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V (V)

Tj=25°C

(Maximum values)

Figure 8. Junction capacitance versus

reverse voltage applied (typical values)

C(nF)

10.0

1.0

V (V)

0.1 1 10 100

F=1MHz

osc

=30mV

=25°C

Figure 10. Thermal resistance junction to

ambient versus copper surface under tab

Rth(j-a)(°C/W)

0 5 10 15 20 25 30 35 40

Epoxy printed circuit board, copper thickness = 35 µm

S(cm²)

4/7 Doc ID 17260 Rev 2

Page 5

STPS2545C-Y Package information

2 Package information

● Epoxy meets UL94, V0

● Lead-free package

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 5. D

packages, depending on their level of environmental compliance. ECOPACK®

is an ST trademark.

PAK dimensions

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 B

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

* FLAT ZONE NO LESSTHAN 2mm

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Figure 11. Footprint (dimensions in mm)

16.90

10.30

8.90

Doc ID 17260 Rev 2 5/7

5.08

1.30

3.70

Page 6

Ordering information STPS2545C-Y

3 Ordering information

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPS2545CGY-TR STPS2545CGY D

PAK 1.48 g 1000 Tape and reel

4 Revision history

Table 7. Document revision history

Date Revision Changes

03-Nov-2011 1 Initial release.

28-Jun-2012 2 Corrected typographical error in Ta bl e 3 .

6/7 Doc ID 17260 Rev 2

Page 7

STPS2545C-Y

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Doc ID 17260 Rev 2 7/7