Datasheet STPS20S100C Datasheet (ST)

Page 1
STPS20S100C
100 V, 20 A power Schottky rectifier
Features
■ High junction temperature capability for
converters located in confined enrironment
■ Low leakage current at high temperature
Schottky barrier
■ Avalanche specification
Description
Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adaptators and on board dc/dc converters. The device is packaged in TO-220AB,
2
I
PAK and TO-220FPAB.
A1
A2
K
A2
K
A1
TO-220AB
STPS20S100CT
K
TO-220FPAB
STPS20S100CFP
K
A1
I2PAK
STPS20S100CR

Table 1. Device summary

Symbol Value
I
F(AV)
V
RRM
T
j
(max) 0.71 V
V
F
K
A2
A2
K
A1
2 x 10 A
100 V
175 °C
February 2010 Doc ID 11281 Rev 2 1/9
www.st.com
9
Page 2
Characteristics STPS20S100C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Symbol Parameter Value Unit
Repetitive peak reverse voltage 100 V
RRM
Forward rms current 30 A
2
Average forward current δ = 0.5
Surge non repetitive forward current tp = 10ms sinusoidal 180 A
FSM
Repetitive peak avalanche power tp = 1µs Tj = 25 °C 7200 W
ARM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
TO-220AB / I
TO-220FPAB T
PA K Tc = 150 °C
= 140 °C
c
(1)
Per diode Per device
Per diode Per device
10 20
10
A
20
175 °C
R
R
R
R
th(j-c)
Junction to case TO-220AB / I2PA K
th(c)
th(j-c)
Junction to case TO-220FPAB
th(c)
Per diode 2.2
°C/WTo tal 1 .3
Coupling 0.3
Per diode 4.5
°C/WTo tal 3 .5
Coupling 2.5
When the diodes 1 and 2 are used simultaneously: Δ T
j(diode 1)

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
= P
(diode 1)
Reverse leakage
(1)
current
(2)
Forward voltage drop
x R
th(j-c)(Per diode)
+ P
(diode 2)
Tj = 25 °C
= 125 °C 1.3 4.5 mA
T
j
T
= 25 °C
j
= 125 °C 0.57 0.61
T
j
= 25 °C
T
j
= 125 °C 0.66 0.71
T
j
= 25 °C
T
j
= 125 °C 0.74 0.80
T
j
V
= V
R
I
= 5 A
F
I
= 10 A
F
I
= 20 A
F
x R
RRM
th(c)
3.5 µA
0.73
0.85
0.94
V
To evaluate the conduction losses use the following equation: P = 0.62 x I
2/9 Doc ID 11281 Rev 2
F(AV)
+ 0.009 I
F2(RMS)
Page 3
STPS20S100C Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per diode)
P (W)
F(AV)
10
9
8
7
6
5
4
3
2
1
0
012345678 910111213
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
δ = 1
=tp/T
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P(1µs)
ARM
1
0.1
0.01
t(µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (δ = 0.5, per diode)
I (A)
F(AV)
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
R =15°C/W
th(j-a)
T (°C)
amb
R=R
th(j-a) th(j-c)
I²PAK/TO-220AB
TO-220FPAB
Figure 4. Normalized avalanche power
derating versus junction temperature
P
(Tj)
ARM
P
(25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T(°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration (maximum values, per diode)
I (A)
M
180
160
140
120
100
80
60
40
IM
20
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =25°C
a
T =75°C
a
T =125°C
a
Doc ID 11281 Rev 2 3/9
Figure 6. Non repetitive surge peak forward
current versus overload duration (maximum values, per diode)
I (A)
M
120
110
100
90
80
70
60
50
40
30
I
M
20
10
0
1.E-03 1.E-02 1.E-01 1.E+00
t
δ
=0.5
t(s)
TO-220FPAB
T =25°C
a
T =75°C
a
T =125°C
a
Page 4
Characteristics STPS20S100C
Figure 7. Relative variation of thermal
impedance junction to case versus pulse duration (per diode)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Figure 9. Reverse leakage current versus
reverse voltage applied (typical values, per diode)
I (mA)
R
1.E+01
T=150°C
j
1.E+00
1.E-01
1.E-02
1.E-03
V (V)
1.E-04
10 20 30 40 50 60 70 80 90 100
R
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
T=25°C
j
Figure 8. Relative variation of thermal
impedance junction to case versus pulse duration (per diode) (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
TO-220FPAB
t (s)
p
δ
T
=tp/T
Figure 10. Junction capacitance versus
reverse voltage applied (typical values, per diode)
C(pF)
1000
100
V (V)
10
1 10 100
R
F=1MHz
V =30mV
OSC RMS
T=25°C
tp
j

Figure 11. Forward voltage drop versus forward current (per diode)

I (A)
FM
100
T=125°C
j
(maximum values)
T=125°C
j
(typical values)
10
V (V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FM
4/9 Doc ID 11281 Rev 2
T=25°C
j
(maximum values)
Page 5
STPS20S100C Package information

2 Package information

● Epoxy meets UL94, V0
● Cooling method: by conduction (C)
● Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 5. TO-220FPAB dimensions

®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
A
H
B
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
L6
L2
L3
L5
F1
L4
F2
F
G1
G
D
L7
E
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
Doc ID 11281 Rev 2 5/9
Page 6
Package information STPS20S100C

Table 6. I2PAK dimensions

Dimensions
L2
Ref.
Millimeters Inches
Min. Max. Min. Max.
A
E
c2
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.035
b1 1.14 1.70 0.044 0.067
D
c 0.49 0.70 0.019 0.028
c2 1.23 1.32 0.048 0.052
L1
L
b1
A1
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.195 0.203
E 10 10.40 0.394 0.409
b
e
e1
c
L 13 14 0.512 0.551
L1 3.50 3.93 0.138 0.155
L2 1.27 1.40 0.050 0.055
6/9 Doc ID 11281 Rev 2
Page 7
STPS20S100C Package information

Table 7. TO-220AB dimensions

Dimensions
L2
F2
F1
F
G1
H2
Dia
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A
C
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L5
L6
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9
L4
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
G
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Doc ID 11281 Rev 2 7/9
Page 8
Ordering information STPS20S100C

3 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode
STPS20S100CT STPS20S100CT TO-220AB 2.20 g 50 Tube
STPS20S100CFP STPS20S100CFP TO-220FPAB 2 g 50 Tube
2
STPS20S100CR STPS20S100CR I
PA K 1. 4 9 g 5 0 Tu b e

4 Revision history

Table 9. Document revision history

Date Revision Changes
16-Mar-2005 1 First issue.
Added cathode indicator K to illustration of TO-220AB on
03-Feb-2010 2
cover page. Changed parameter in Tabl e 2 from “ RMS forward voltage “ to “ Forward rms current “.
8/9 Doc ID 11281 Rev 2
Page 9
STPS20S100C
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Doc ID 11281 Rev 2 9/9
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