Datasheet STPS20100CT Datasheet (SGS Thomson Microelectronics)

®

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

VF(max) 0.7V

Tj (max) 175°C

FEATURES

Negligible switching losses

■

Low forward voltage drop

■

Low capacitance

■

High reverse avalanche surge capability

■

2 x 10A

100V

STPS20100CT

A1

K

A2

A2

K

A1

DESCRIPTION

High voltage dual Schottky rectifier suited for
switchmode power supplies and other power

TO-220AB

STP20100CT

converters. Packaged in TO-220AB, this device
is intended for use in medium voltage operation,
and particularly, in high frequency circuitries
where low switching losses and low noise are
required.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

Repetitive peak reverse voltage 100 V
RMS forward current
Average forward current δ = 0.5 Tc=110°C

VR= 60V

Surge non repetitive forward current tp=10ms

Per diode 30 A
Per diode

Per device

10
20

Per diode 200 A

sinusoidal

I

RRM

Repetitive peak reverse current tp=2µs

Per diode 1 A

F=1KHz

I

RSM

Non repetitive peak reverse current tp=100µs

Per diode 1 A

A
A

*:

Tstg

Tj

dV/dt

dPtot

Storage temperature range
Maximum junction temperature (*)
Critical rate of rise of reverse voltage

<

dTj Rth j a

August 2002 - Ed:2C

-65to+175 °C
175 °C

1000 V/µs

thermal runaway condition for a diode on its own heatsink

−1()

1/4

STPS20100CT

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-c) Junction to case

Per diode
Total

1.6

0.9

Rth (c) Coupling 0.15

When the diodes 1 and 2 are used simultaneously :
Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

ELECTRICAL CHARACTERISTICS (Per diode)

STATIC CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

* Reverse leakage current VR=V

I

R

RRM

Tj = 25°C 150 µA
Tj = 125°C 100 mA

** Forward voltage drop IF = 20A Tj = 125°C 0.85 V

V

F

IF = 10A Tj = 125°C 0.60 0.70
IF = 20A Tj = 25°C 0.95

Pulse test : * tp = 5 ms, duty cycle<2%

** tp = 380 µs, duty cycle<2%

°C/W

°C/W

To evaluate the conduction losses use the following equation :
P=0.55xI

Fig. 1 : Average forward power dissipation versus
average forward current. (Per diode)

P

F(av)(W)

12
11
10

9
8
7
6
5
4
3
2
1
0

0123456789101112131415

F(AV)

=0.05

+ 0.015 x I

=0.1

I

F(av)(A)

F2(RMS)

=0.2

=0.5

=tp/T

Fig. 2 : Average current versus ambient
temperature. (duty cycle : 0.5) (Per diode)

I

F(av)(A)

12

=1

T

tp

10

8

6

4

2

0

0 25 50 75 100 125

=0.5

=tp/T

Rth(j-a)=Rth(j-c)

Rth(j-a)=15 C/W

T

tp

Tamb( C)

o

o

2/4

STPS20100CT

Fig. 3 : Non repetitive surge peak forward current

versus overload duration.
(Maximum values) (Per diode)

I

M(A)

180
160
140
120
100

80
60

IM

40
20

0

0.001 0.01 0.1 1

t
=0.5

t(s)

o

Tc=25 C

o

Tc=50 C

o

Tc=110 C

Fig. 5 : Reverse leakage current versus reverse
voltage applied. (Typical values) (Per diode)

I

50.000

10.000

R(mA)

o

Tj=125 C

Fig. 4 : Relative variation of thermal transient
impedancejunctiontocase versus pulseduration.

Fig. 6 : Junction capacitance versus reverse
voltage applied. (Typical values) (Per diode)

C(pF)

2000

1000

o

Tj=125 C

F=1MHz

1.000

0.100

0.010

0.001
0 102030405060708090100

o

Tj=100 C

o

Tj=75 C

o

Tj=50 C

V

R(V)

Fig. 7 : Forward voltage drop versus forward
current. (Maximum values) (Per diode)

V

FM(V)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100

o

Tj=125 C

I

FM(A)

V

100

110100

R(V)

3/4

STPS20100CT

PACKAGE MECHANICAL DATA

TO-220AB (JEDEC outline)

OPTIONAL

H2

A

C

REF.

Millimeters Inches

DIMENSIONS

Min. Max. Min. Max.

L5

Dia

L6

L7

A 4.30 4.60 0.169 0.181
C 1.22 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.33 0.70 0.013 0.028
F 0.61 0.93 0.024 0.037

L2

F1 1.14 1.70 0.045 0.067
F2 1.14 1.70 0.045 0.067

G 4.95 5.15 0.195 0.202

L9

F2

F1(x2)

D

L4

G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409

L2 16.00 Typ. 0.630Typ.
L4 13.00 14.00 0.512 0.551
L5 2.65 2.95 0.104 0.116

M

F

G1

G

E

L6 14.80 15.75 0.583 0.620
L7 6.20 6.60 0.244 0.260
L9 3.40 3.94 0.134 0.155

M 2.60 Typ. 0.102 Typ.

Dia. 3.75 3.89 0.148 0.153

Ordering type Marking Package Weight Base qty

Delivery

mode

STPS20100CT STPS20100CT TO-220AB 2.23g 50 Tube

■

Cooling method : by conduction (C)

■

Recommended torque value : 0.55N.m.

■

Maximum torque value : 0.7N.m.

■

Epoxy meets UL94,V0

Informationfurnished isbelieved tobe accurateand reliable.However, STMicroelectronicsassumes noresponsibility forthe consequencesof
useof suchinformation norfor anyinfringement ofpatents orother rightsof thirdparties whichmay resultfrom itsuse. Nolicense isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedesand replaces all informationpreviously supplied.
STMicroelectronics products are notauthorized for use as critical components inlife support devices or systems withoutexpress written ap­proval ofSTMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany

Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore

Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

4/4