Datasheet STPS200170TV1 Datasheet (ST)

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Page 1

Features

STPS200170TV1

High voltage power Schottky rectifier

■ Negligible switching losses

■ Avalanche rated

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ Insulated package: ISOTOP

– Electrical insulation = 2500 V rms,

capacitance = 45 pF

Description

This high voltage Schottky rectifier is suited for high frequency switch mode power supplies.

Packaged in ISOTOP, this device is intended for use in the secondary rectification of applications.

A1 K1

A2 K2

ISOTOP

Table 1. Device summary

F(AV)

RRM

(typ) 0.63 V

2 x 100 A

170 V

150 °C

September 2011 Doc ID 11857 Rev 2 1/7

www.st.com

Page 2

Characteristics STPS200170TV1

1 Characteristics

Table 2. Absolute ratings - limiting values per diode at T

= 25 °C, unless otherwise specified

amb

Symbol Parameter Value Unit

RRM

F(RMS)

F(AV)

FSM

ARM

1. condition to avoid thermal runaway for a diode on its own heatsink

Repetitive peak reverse voltage 170 V

Forward rms current 200 A

Average forward current, δ = 0.5 Tc = 105 °C per diode 100 A

Surge non repetitive forward current tp = 10 ms sinusoidal 700 A

= 1 µs, Tj = 25 °C

Repetitive peak avalanche power

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature

tot

--------------------------< R

th j a–()

--------------dT

(1)

100000 W

150 °C

Table 3. Thermal parameters

Symbol Parameter Value Unit

Per diode 0.52

th(j-c)

th(c)

Junction to case

°C/WTo t al 0 . 31

Coupling thermal resistance 0.1

When the diodes are used simultaneously: T

j(diode1)

= P

(diode1)

X R

(per diode) + P

th(j-c)

(diode2)

X R

th(c)

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

= 380 µs, δ < 2 %

= 25 °C

= 125 °C - 30 100 mA

Tj = 25 °C

= 150 °C - 0.63 0.68

= 25 °C IF = 200 A - - 0.975

= 150 °C - 0.78 0.86

= V

= 100 A

RRM

--200µA

- - 0.85

To evaluate the conduction losses use the following equation: P = 0.5 x I

+ 0.0018 I

F(AV)

F2(RMS)

2/7 Doc ID 11857 Rev 2

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STPS200170TV1 Characteristics

Figure 1. Conduction losses versus average

current (per diode)

(W)

F(AV)

100

0 20 40 60 80 100 120

δ=0.05

δ=0.1

F(AV)

δ=0.2

(A)

δ=0.5

=t /T

δ=1

Figure 3. Non-repetitive surge peak forward

current vesus overload duration (maximum values per diode)

IM(A)

800

700

600

500

400

300

200

100

1.E-03 1.E-02 1.E-01 1.E+00

=0.5

t(s)

TC=50°C

TC=75°C

TC=125°C

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

(A)

F(AV)

120

100

=tp/T

0 25 50 75 100 125 150

th(j-a)=Rth(j-c)

(°C)

amb

Figure 4. Relative variation of thermal

impedance (junction to case) versus pulse duration

(j ) (j )

th -c/Rth -c

1.0

0.9

0.8

0.7

δ=0.5

0.6

0.5

0.4

δ=0.2

0.3

δ=0.1

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Single pulse

tP(s)

=tp/T

Figure 5. Reverse leakage current versus

reverse voltage applied (typical values per diode)

IR(mA)

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

Doc ID 11857 Rev 2 3/7

Figure 6. Junction capacitances versus

reverse voltage applied (typical values per diode)

C(pF)

10000

1000

100

1 10 100 1000

VR(V)

F=1MHz

OSC

Tj=25°C

=30mV

RMS

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Characteristics STPS200170TV1

Figure 7. Forward voltage drop versus

forward current (per diode, low level)

IFM(A)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

VFM(V)

Tj=25°C

(Maximum values)

Figure 9. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

0.1

0.01

t (µs)

0.001

0.10.01 1

10 100 1000

Figure 8. Forward voltage drop versus

forward current (per diode, high level)

IFM(A)

1000

Tj=150°C

(Maximum values)

Tj=150°C

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

Tj=150°C

(Typical values)

(Maximum values)

VFM(V)

Tj=25°C

Figure 10. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

0.8

0.6

0.4

0.2

25 50 75 100 125 150

T (°C)

4/7 Doc ID 11857 Rev 2

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STPS200170TV1 Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 5. ISOTOP dimensions

packages, depending on their level of environmental compliance. ECOPACK®

is an ST trademark.

Dimensions

F1 F

ØP

Ref.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004

E1 23.85 24.15 0.939 0.951

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

Millimeters Inches

Min. Max. Min. Max.

Doc ID 11857 Rev 2 5/7

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Ordering information STPS200170TV1

3 Ordering information

Table 6. Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STPS200170TV1 STPS200170TV1 ISOTOP

4 Revision history

Table 7. Document revision history

Date Revision Changes

14-Nov-2005 1 First issue.

09-Sep-2011 2 Updated V

27 g

without screws

at Tj = 25 °C and IF = 100 A to 0.85 V.

F max

with

screws

Tube

6/7 Doc ID 11857 Rev 2

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STPS200170TV1

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Doc ID 11857 Rev 2 7/7