Datasheet STPS1L60, STPS1L60RL, STPS1L60A Datasheet (SGS Thomson Microelectronics)

®

MAIN PRODUCT CHARACTERISTICS

STPS1L60/A

POWER SCHOTTKY RECTIFIER

I

F(AV)

V

RRM

1A

60 V

Tj (max) 150°C

(max) 0.56 V

V

F

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

■

LOW FORWARD VOLTAGE DROP

■

AVALANCHE CAPABILITY SPECIFIED

■

DO-41

STPS1L60

DESCRIPTION

Axial and Surface Mount Power Schottky rectifier
suited for Switch Mode Power Supplies and high
frequency DC to DC converters. Packaged in

SMA

STPS1L60A

DO-41 and SMA, this device is intended for use in
low voltage, high frequency inverters and small
battery chargers.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage
RMS forward current
Average forward current TL= 130°C δ = 0.5 SMA

60 V
10 A

1A

I

*:

FSM

P

ARM

T

T

dV/dt

dPtot

Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak avalanche power tp = 1µs Tj = 25°C

stg

Storage temperature range

j

Maximum junction temperature *
Critical rate of rise of reverse voltage

<

dTj Rth j a

July 2003 - Ed: 5A

T

= 120°C δ = 0.5 DO-41

L

thermal runaway condition for a diode on its ownheatsink

−1()

40 A

1200 W

- 65 to + 150 °C
150 °C

10000 V/µs

1/6

STPS1L60/A

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-a)

Junction to ambient Lead length = 10 mm DO-41

SMA

R

th(j-l)

Junction to leads Lead length = 10 mm DO-41

SMA

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

*

I

R

V

F

Pulse test : * tp = 380 µs, δ <2%

Reverse leakage current Tj= 25°C VR= 60V

T

= 100°C

j

*

Forward voltage drop Tj= 25°C IF=1A

T

= 100°C

j

T

= 125°C

j

T

= 25°C IF=2A

j

T

= 100°C

j

T

= 125°C

j

100 °C/W
120

45
30

50 µA

1.5 5 mA

0.57 V

0.56

0.5 0.54

0.75

0.68

0.6 0.66

To evaluate the maximum conduction losses use the following equation:
P=0.44xI

Fig. 1: Average forward power dissipation versus
average forward current.

P (W)

F(AV)

0.8

0.6

0.4

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

F(AV)

δ = 0.05

+0.12xI

δ = 0.1

I (A)

F(AV)

F2(RMS)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).

I (A)

F(AV)

1.2

1.0

0.8

0.6

0.4

0.2

tp

0.0
0 25 50 75 100 125 150

δ

=tp/T

T

tp

R =120°C/W

th(j-a)

R =100°C/W

th(j-a)

T (°C)

amb

R=R

th(j-a) th(j-I)

SMA

DO-41

2/6

STPS1L60/A

Fig. 3: Normalized avalanche power derating

versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Fig.5-1:Non repetitive surgepeakforwardcurrent
versus overload duration (maximum values)
(DO-41).

I (A)

M

8

7

6

T =25°C

5

4

3

2

IM

1

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

a

T =50°C

a

T =100°C

a

Fig. 4: Normalized avalanche power derating
versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

T (°C)

0

j

0 25 50 75 100 125 150

Fig.5-2:Non repetitive surgepeakforwardcurrent
versus overload duration (maximum values)
(SMA).

I (A)

M

8

7

6

5

4

3

2

IM

1

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

T =25°C

a

T =50°C

a

T =100°C

a

Fig. 6-1: Relative variation of thermal impedance
junctiontoambient versus pulseduration(DO-41).

Z/R

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Single pulse

t (s)

p

δ

=tp/T

T

tp

Fig. 6-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (SMA).

Z/R

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t (s)

p

δ

=tp/T

T

tp

3/6

STPS1L60/A

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

I (mA)

R

1E+1

1E+0

1E-1

1E-2

1E-3

1E-4

0 5 10 15 20 25 30 35 40 45 50 55 60

T=125°C

j

T=100°C

j

T=25°C

j

V (V)

R

Fig. 9-1: Forward voltage drop versus forward

current (low level, maximum values) (DO-41).

I (A)

FM

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T=100°C

j

V (V)

FM

T=25°C

j

Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).

C(pF)

200

F=1MHz
T=25°C

j

100

50

20

V (V)

10

1 10 100

R

Fig. 9-2: Forward voltage drop versus forward

current (high level, maximum values) (SMA).

I (A)

FM

10

T=100°C

j

5

2

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

V (V)

FM

T=25°C

j

Fig. 10: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35µm) (SMA).

R (°C/W)

th(j-)

140

120

100

80

60

40

20

0

012345

4/6

S(Cu)(cm²)

Fig. 11: Thermal resistance versus lead length

(DO-41).

R (°C/W)

th

120

R

100

80

60

40

20

0

5 10152025

th(j-a)

R

th(j-I)

L (mm)

leads

PACKAGE MECHANICAL DATA

SMA (JEDEC DO-214AC)

E1

REF.

STPS1L60/A

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

D

E

A1

C

L

A2

FOOT PRINT DIMENSIONS (in millimeters)

1.65

1.45 1.45

2.40

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

b

D 2.25 2.95 0.089 0.116

5/6

STPS1L60/A

PACKAGE MECHANICAL DATA

DO-41 plastic

CA

O

/

D

C

O

/

D

BO

/

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
C 28 1.102

Ordering type Marking Package Weight Base qty Delivery mode

STPS1L60 Partnumber

DO-41 0.34g 2000 Ammopack

cathode ring

STPS1L60RL Partnumber

DO-41 0.34g 5000 Tape & Reel

cathode ring

STPS1L60A GB6 SMA 0.068 g 5000 Tape & Reel

■

EPOXY MEETS UL94,V0

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