Datasheet STPS1L40U, STPS1L40A Datasheet (SGS Thomson Microelectronics)

®

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTIC S

STPS1L40A/U

I

F(AV)

V

RRM

1 A

40 V

Tj (max) 150 °C

(max) 0.42 V

V

F

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOS SES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTA GE DROP
SURFACE MOUNT MINIATURE PACKAGE

DESCRIPTION

Single chip Schottky rectifiers suited to Switched
Mode Power Supplies and high f requency DC to
DC converters.

Packaged in SMA and SMB, this device is
especially intended for surface mounting and used
in low voltage, high frequency inverters, free
wheeling and polarity protection applications.

ABSOLUTE RATINGS

(limiting values)

SMA

(JEDEC DO-214AC)

STPS1L40A

SMB

(JEDEC D O- 214AA )

STPS1L40U

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

T

stg

Repetitive peak reverse voltage 40 V
RMS forward current 8 A
Average forward current TL = 130°C

δ

= 0.5 1 A
Surge non repetitive forward current tp = 10 ms Sinus oidal 60 A
Repetitive peak reverse current tp = 2 µs square F=1kHz 1 A
Non repetitive peak reverse c urrent tp = 100 µs square 1 A
Storage temperature range - 65 to + 150

Tj Maximum operating junction temperature * 150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

* :

July 1999 - Ed: 3A

dTj

<

Rth(j

1

thermal runaway condition for a diode on its own heatsink

a

−

)

°

C

1/5

STPS1L40A/U

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-l)

Junction to lead SMA 30

SMB 25

STATIC ELECTRICAL CHARACTERISTICS

Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit

* Reverse leakage current T j = 25°CV

I

R

= 40 V 35

R

Tj = 125°C610mA

* Forward voltage drop Tj = 25°CI

V

F

= 1 A 0.5 V

F

Tj = 125°C 0.37 0.42
Tj = 25°CI

= 2 A 0.63

F

Tj = 125°C 0.5 0.61

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :
P = 0.23 x I

F(AV)

+ 0.19 I

F2(RMS )

°

C/W

µ

A

Fig. 1:

Average forward power dissipation versus

average forward current.

PF(av)(W)

0.70

0.60

0.50

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

0.40

0.30

δ

=tp/T

T

tp

0.20

0.10

0.00

0.0 0.2 0.4 0.6 0.8 1.0 1.2

IF(av) (A)

Fig. 3-1:

Non repetitive surge peak forward cur­rent versus overload duration (maximum values)
(SMB).

IM(A)

7
6
5
4
3
2

I

M

1
0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=50°C

Ta=100°C

Fig. 2:

Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

1.2

1.0

0.8

0.6

0.4

Rth(j-a)=120°C/W

Rth(j-a)=100°C/W

T

Rth(j-a)=Rth(j-l)

0.2

=tp/T

δ

0.0
0 25 50 75 100 125 150

Fig. 3-2:

tp

Tamb(°C)

Non repetitive surge peak forward cur­rent versus overload duration (maximum values)
(SMA).

IM(A)

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

I

M

1.0

0.5

0.0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=50°C

Ta=100°C

2/5

STPS1L40A/U

Fig. 4-1:

Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35µm, recommended
pad layout) (SMB).

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

0.2

δ = 0.1

0.0

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 5:

Single pulse

Reverse leakage current versus reverse

tp(s)

δ

=tp/T

T

tp

voltage applied (typical values).

IR(mA)

2E+1
1E+1

1E+0

Tj=150°C

Tj=100°C

Fig. 4-2:

Relative var iation of therma l impeda nce
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35µm, recommended
pad layout) (SMA).

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

δ = 0.5

0.4

δ

=tp/T

T

tp

δ = 0.2

0.2

δ = 0.1

0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 6:

Single pulse

Junction capacitance versus reverse

tp(s)

voltag e applied (ty pical values).

C(pF)

200

F=1MHz

100

Tj=25°C

1E-1

1E-2

1E-3

0 5 10 15 20 25 30 35 40

Fig. 7-1:

Forward voltage drop versus forward cur-

Tj=25°C

VR(V)

rent (typical values, high level).

IFM(A)

10.00

Tj=125°C

1.00

0.10

0.01

Tj=150°C

Tj=25°C

VFM(mV)

0 100 200 300 400 500 600 700 800 900 1000

50

20

VR(V)

10

12 51020 50

Fig. 7-2:

Forward voltage drop versus forward cur-

rent (typical values, low level).

IFM(A)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 100 200 300 400 500 600 700 800

Tj=150°C

Tj=125°C

Tj=25°C

VFM(mV)

3/5

STPS1L40A/U

Fig. 8-1:

Thermal resistance junction to ambient
versus coppe r surface under each l ead (Epoxy
printed circuit board FR4, copper thickness
e(Cu)= 35µm) (SMB).

Rth(j-a) (°C/W)

120
100

80
60
40
20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(Cu) (cm²)

PACKAGE MECHANICAL DAT A

SMA

E1

Fig. 8-2:

Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness e(Cu)=
35µm) (SMA).

Rth(j-a) (°C/W)

140
120
100

80
60
40
20

0

012345

S(Cu) (cm²)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

E

C

L

FOOT PRINT DIMENSIONS

D

A1

A2

(in millimeters)

1.65

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0. 049 0.065

c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0. 089 0.116

b

L 0.75 1.60 0. 030 0.063

1.45 1.45

2.40

4/5

PACKAGE MECHANICAL DAT A

SMB

E1

REF.

STPS1L40A/U

DIMENSIONS

Millimeter s Inches

Min. Max. Min. Max.

E

C

L

FOOT PRINT DIMENSIONS

1.52 2.75

D

A1

A2

(in millimeters)

2.3

1.52

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

b

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

Ordering type Marking P ackage Weight Base qty Delivery mode

STPS1L40U GC4 SMB 0.107g 2500 Tape & reel
STPS1L40A GB4 SMA 0.068g 5000 Tape & reel

Band indicates cathode
Epoxy meets UL94,V0

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