Datasheet STPS1L30M Datasheet (SGS Thomson Microelectronics)

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LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

STPS1L30M

F(AV)

RRM

30 V

Tj (max) 150°C

(max) 0.38V

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

■

NEGLIGIBLE SWITCHING LOSSES

■

EXTREMELY FAST SWITCHING

■

LOW FORWARD VOLTAGE DROP FOR

■

HIGHER EFFICIENCY & EXTENDED BATTERY LIFE

LOW THERMAL RESISTANCE

■

AVALANCHE CAPABILITY SPECIFIED

■

DESCRIPTION

Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.

Packaged in ST Mite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits battery powered equipment (cellular, notebook, PDA’s, printers) as well chargers and PCMCIA cards.

ST Mite

(DO-216AA)

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

RRM

F(RMS)

F(AV)

FSM

ARM

Repetitive peak reverse voltage 30 V RMS forward current 2 A Average forward current Tc = 140°C δ = 0.5 1 A Surge non repetitive forward current tp = 10 ms sinusoidal 50 A Repetitive peak avalanche power tp = 1µs Tj = 25°C 1200 W Storage temperature range - 65 to + 150 °C

stg

Tj Maximum operating junction temperature* 150 °C

dV/dt Critical rate of rise of reverse voltage (rated Vr, Tj = 25°C) 10000 V/µs

dPtot

dTj Rth j a

July 2003 - Ed : 2A

thermal runaway condition for a diode on its own heatsink

−1()

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STPS1L30M

THERMAL RESISTANCE

Symbol Parameter Value Unit

R R

th (j-c) th (j-a)

Junction to case 20 °C/W Junction to ambient with minimum recommended pad size,

PC board FR4

STATIC ELECTRICAL CHARACTERISTICS

Value

Symbol Parameter Tests conditions

Min. Typ. Max.

* Reverse leakage current Tj = 25°C VR=V

RRM

0.13 0.39 mA Tj = 85°C 5.25 16.5 Tj = 25°C V

= 20 V 0.05 0.24

Tj = 85°C 3.5 10.5 Tj = 25°C V

= 10 V 0.03 0.15

Tj = 85°C 2.4 7

* Forward voltage drop Tj= 25°C IF= 1A 0.33 0.39 V

Tj = 85°C 0.28 0.34

250 °C/W

Unit

Tj = 25°C I

= 3 A 0.45 0.53

Tj=85°C 0.43 0.51

Pulse test : * tp ≤ 380 µs, δ≤2%

To evaluate the conduction losses use the following equation : P=0.34xI

F(AV)

+ 0.07 I

F2(RMS)

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STPS1L30M

Fig.1:Conductionlossesversus average current.

P (W)F(AV)

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

δ = 0.05

δ = 0.1

I (A)F(AV)

δ = 0.2

δ = 0.5

=tp/T

δ = 1

Fig. 3: Normalized avalanche power derating versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

0.1

0.01

t (µs)

0.001

0.10.01 1

10 100 1000

Fig. 2: Average forward current versus ambient temperature (δ = 0.5)

I (A)F(AV)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0 0 25 50 75 100 125 150

th(j-a)

=270°C/W

T (°C)amb

th(j-a)=Rth(j-c)

Fig. 4: Normalized avalanche power derating versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2

0.8

0.6

0.4

0.2

0 25 50 75 100 125 150

T (°C)

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

I (A)M

22 20 18 16 14 12 10

8 6

4 2 0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t(s)

TC=25°C

TC=75°C

TC=125°C

Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0

1.E-04 1.E-03 1.E-02 1.E-01

t (s)P

=tp/T

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STPS1L30M

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

I (mA)R

1.E+03

Tj=150°C

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02 024681012141618202224262830

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

V (V)R

Fig. 9: Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

1000

100

V (V)R

1 10 100

F=1MHz

osc

=30mV

=25°C

Fig. 8: Reverse leakage current versus junction temperature (typical values).

I (mA)R

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

VR=30V

Tj(°C)

1.E-02 0 25 50 75 100 125 150

Fig. 10: Forward voltage drop versus forward

current.

I (A)FM

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50

Tj=85°C

(Maximum values)

Tj=85°C

(Typical values)

V (V)FM

Tj=25°C

(Maximum values)

Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm, typical values).

th(j-a)

R (°C/W)

250

200

150

100

S(mm²)

0 20 40 60 80 100 120 140 160 180 200

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PACKAGE MECHANICAL DATA

ST Mite

0° to 6°

STPS1L30M

DIMENSIONS

REF.

A 0.85 1.00 1.15 0.033 0.039 0.045

A1 0.10 0.004

b 0.40 0.65 0.016 0.025

b2 0.70 1.00 0.027 0.039

c 0.10 0.25 0.004 0.010

D 1.75 1.90 2.05 0.069 0.075 0.081

E 1.75 1.90 2.05 0.069 0.075 0.081

H 3.60 3.75 3.90 0.142 0.148 0.154

L 0.50 0.63 0.80 0.047 0.025 0.031 L2 1.20 1.35 1.50 0.047 0.053 0.059 L3 0.50 ref (Typ.) 0.019 ref (Typ.)

R 0.07 0.003

R1 0.07 0.003

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Note: The anode is connected to the longer tab

The cathode is connected to the shorter tab (heatsink)

FOOTPRINT (dimensions in mm)

2.67

0.762

2.54

0.635

1.27

Type Marking Package Weight Base qty Delivery mode

STPS1L30M 1L3 ST Mite 15.5 mg 12000 Tape & reel

Informationfurnished is believed to be accurate and reliable.However, STMicroelectronics assumes no responsibility for the consequencesof useof such information nor for any infringementof patents or other rights of third partieswhich may result from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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Datasheet STPS1L30M Datasheet (SGS Thomson Microelectronics)

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