Datasheet STPS1L30U, STPS1L30A Datasheet (SGS Thomson Microelectronics)

®

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

STPS1L30A/U

I

F(AV)

V

RRM

1 A

30 V

Tj (max) 150 °C

(max) 0.3 V

V

F

FEATURES AND BENE FITS

VERY LOW FORWARD VOLTAGE DROP FO R
LESS POWER DISSIPATION

OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
YIELD IN THE APPLICATIONS

SURFACE MOUNT MINIATURE PA CKAG E

DESCRIPTION

Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con­verters, freewheel diode and integrated circuit
latch up protection.

Packaged in SMA and SMB, this device is espe­cially intended for use in parallel with MOSFETs in
synchronous rectification.

SMA

STPS1L30A

JEDEC DO-214AC

SMB

STPS1L30U

JEDEC DO-214AA

ABSOLUTE RATINGS

(limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

T

stg

Tj Maximum operating junction temperature * 150

Repetitive peak reverse voltage 30 V
RMS forward current 10 A
Average forward current TL = 135°C

δ

= 0.5 1 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Storage temperature range - 65 to + 150

°
°

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

* :

August 1999 - Ed: 4A

dTj

<

1

Rth(j−a

thermal runaway condition for a diode on its own heatsink

)

C
C

1/5

STPS1L30A/U

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-l)

Junction to lead SMA 30

SMB 25

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameters Tests Conditions Min. Typ. Max. Unit

* Reverse leakage Current Tj = 25°CV

I

R

= V

R

RRM

200

Tj = 100°C615mA

* Forward Voltage drop Tj = 25°CI

V

F

= 1 A 0.395 V

F

Tj = 125°C0.260.3
Tj = 25°CI

= 2 A 0.445

F

Tj = 125°C 0.325 0.375

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :
P = 0.225 x I

F(AV)

+ 0.075 I

F2(RMS )

°

C/W

µ

A

Fig. 1:

Average forward power dissipation versus

average forward current.

PF(av)(W)

0.50

δ = 0.2

0.45

0.40

δ = 0.05

δ = 0.1

δ = 0.5

0.35

0.30

0.25

δ = 1

0.20

0.15

T

0.10

0.05

0.00

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Fig. 3-1:

Non repetitive surge peak forward cur-

IF(av) (A)

δ

=tp/T

tp

rent versus overload duration (maximum values)
(SMA).

IM(A)

10

8

6

4

I

M

2

0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=50°C

Ta=100°C

Fig. 2:

Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

1.2

Rth(j-a)=Rth(j-l)

1.0

0.8

0.6

0.4

T

0.2

tp

=tp/T

δ

0.0
0 25 50 75 100 125 150

Fig. 3-2:

Non repetitive surge peak forward cur-

Rth(j-a)=120°C/W

Rth(j-a)=100°C/W

Tamb(°C)

rent versus overload duration (maximum values)
(SMB).

IM(A)

10

8

6

4

I

M

2

0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=50°C

Ta=100°C

2/5

STPS1L30A/U

Fig. 4-1:

Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35µm, recommended
pad layout) (SMB).

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

0.4

0.2

T

0.0

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 5:

Reverse leakage current versus reverse

tp(s)

δ

=tp/T

tp

voltage applied (typical values).

IR(mA)

1E+2

1E+1

1E+0

Tj=150°C

Tj=125°C

Tj=100°C

Fig. 4-2:

Relative var iation of therma l impeda nce
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35µm, recommended
pad layout) (SMA).

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

0.4

0.2

T

tp

0.0

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 6:

Junction capacitance versus reverse

tp(s)

δ

=tp/T

voltag e applied ( typical values).

C(pF)

500

F=1MHz
Tj=25°C

100

1E-1

1E-2

1E-3

0 5 10 15 20 25 30

Fig. 7-1:

Forward voltage drop versus forward cur-

Tj=25°C

VR(V)

rent (typical values, high level).

IFM(A)

10.00

Tj=100°C

1.00

Tj=150°C

0.10

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Tj=25°C

VFM(V)

10

12 5102030

Fig. 7-2:

Forward voltage drop versus forward c ur­rent (maximum values, low lev el).

IFM(A)

3.0

VR(V)

Typical values

Tj=150°C

Tj=125°C

Tj=100°C

Tj=25°C

VFM(V)

2.5

2.0

1.5

1.0

0.5

0.0

0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60

3/5

STPS1L30A/U

Fig. 8-1:

Thermal resistance junction to ambient
versus coppe r surface under each l ead (Epoxy
printed circuit board FR4, copper thickness:
35µm) (SMB).

Rth(j-a) (°C/W)

120
100

80
60
40
20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(Cu) (cm²)

PACKAGE MECHANICAL DAT A

SMA

E1

Fig. 8-2:

Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm)
(SMA).

Rth(j-a) (°C/W)

140
120
100

80
60
40
20

0

012345

S(Cu) (cm²)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

E

C

L

FOOT PRINT DIMENSIONS

D

A1

A2

(in millimeters)

1.65

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

b

D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063

4/5

1.45 1.45

2.40

PACKAGE MECHANICAL DAT A

SMB

STPS1L30A/U

DIMENSIONS

E1

E

C

L

FOOT PRINT DIMENSIONS

D

A1

A2

(in millimeters)

2.3

REF.

Millimeter s Inche s

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

b

L 0.75 1.60 0.030 0.063

1.52 2.75

1.52

Ordering type Marking Package Weight Base qty Delivery mode

STPS1L30U G23 SMB 0.107g 2500 Tape & reel
STPS1L30A GB3 SMA 0.068g 5000 Tape & reel

Band indicates cathode
Epoxy meets UL94,V0

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