Datasheet STPS1H100MF Datasheet (ST)

Features

■ Negligible switching losses

■ High junction temperature capability

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ Avalanche capability specified

Description

Schottky rectifier designed for high frequency
miniature switch mode power supplies such as
adaptors and on-board DC/DC convertors. This
device is packaged in STmite flat.

STPS1H100MF

High voltage power Schottky rectifier

A

K

STmite flat

(DO222-AA)

Table 1. Device summary

I

F(AV)

V

RRM

(max) 175 °C

T

j

V

(max) 0.62 V

F

1 A

100 V

May 2008 Rev 1 1/7

www.st.com

Characteristics STPS1H100MF

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

T

Repetitive peak reverse voltage 100 V

Forward current rms 2 A

Average forward current Tc = 160 °C δ = 0.5 1 A

Surge non repetitive forward current tp = 10 ms sinusoidal 50 A

Repetitive peak reverse current tp = 2 µs, F = I kHz square 1 A

Non-repetitive peak reverse current tp = 100 µs square 1 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1500 W

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

j

(1)

175 °C

dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C) 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

1

--------------------------

<

Rth j a–()

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case 20 °C/W

Symbol Parameter Tests conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: = 5 ms, δ < 2%

2. Pulse test: = 380 µs, δ < 2%

Reverse leakage current

(2)

Forward voltage drop

F

Tj = 25 °C

VR = V

= 1 A

I

F

I

= 2 A

F

RRM

= 125 °C 0.2 0.5

T

j

= 25 °C

T

j

T

= 125 °C 0.58 0.62

j

= 25 °C

T

j

= 125 °C 0.65 0.7

T

j

4µA

0.77

0.86

mA

V

To evaluate the conduction losses use the following equation: P = 0.54 x I

2/7

F(AV)

+ 0.08 I

F2(RMS)

STPS1H100MF Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

δ=0.05

δ=0.1

I (A)

F(AV)

δ=0.2

δ

=tp/T

δ=0.5

δ=1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

R

=250°C/W

T (°C)

amb

th(j-a)=Rth(j-c)

1.0

0.8

0.6

R

0.4

0.2

0.0

0 25 50 75 100 125 150 175

δ

T

=tp/T

th(j-a)

tp

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(Tj)

ARM

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values)

I (A)

M

22

20

18

16

14

12

10

8

6

I

M

4

2

0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Tc=25 °C

Tc=75 °C

Tc=125 °C

Figure 6. Forward voltage drop versus

forward current

I (A)

FM

20.0

18.0

16.0

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

3/7

Tj=125 °C

Tj=125 °C

(Maximum values)

(Maximum values)

Tj=125 °C

Tj=125 °C

(Typical values)

(Typical values)

Tj=25 °C

(Maximum values)

V (V)

FM

Characteristics STPS1H100MF

Figure 7. Relative variation of thermal

impedance, junction to ambient,
versus pulse duration (epoxy
printed circuit board, copper
thickness = 35 µm, recommended
pad layout)

Z/R

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t (s)

p

Figure 9. Reverse leakage current versus

voltage applied (typical values)

Figure 8. Thermal resistance, junction to

ambient, versus copper surface
under each lead (epoxy
printed board FR4,
copper thickness = 35 µm)

R

(°C/W)

th(j-a)

250

225

200

175

150

125

100

75

50

25

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S (cm )

CU

2

Figure 10. Junction capacitance versus

reverse voltage applied (typical
values)

I (µA)

R

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

0 20406080100

Tj=150 °C

Tj=125 °C

Tj=100 °C

Tj=75 °C

Tj=50 °C

Tj=25 °C

V (V)

R

C(pF)

100

V (V)

10

1 10 100

R

V

F=1 MHz

OSC

Tj=25 °C

=30 mV

RMS

4/7

STPS1H100MF Package information

2 Package information

● Epoxy meets UL94, V0

In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.

Table 5. STmite flat dimensions

Dimensions

®

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

E1

D

L

b

L1

L2

A 0.80 0.85 0.95 0.031 0.033 0.037

b 0.40 0.55 0.65 0.016 0.022 0.026

b2 0.70 0.85 1.00 0.027 0.033 0.039

b2

c 0.10 0.15 0.25 0.004 0.006 0.009

E

L3

D 1.75 1.90 2.05 0.069 0.075 0.081

E 3.60 3.80 3.90 0.142 0.150 0.154

c

A

E1 2.80 2.95 3.10 0.110 0.116 0.122

L 0.50 0.55 0.80 0.020 0.022 0.031

L1 2.10 2.40 2.60 0.083 0.094 0.102

L2 0.45 0.60 0.75 0.018 0.024 0.030

L3 0.20 0.35 0.50 0.008 0.014 0.020

Figure 11. STmite flat recommended footprint (all dimensions in mm)

0.85 0.63 2.00

0.65

0.65

0.95 1.95

4.13

5/7

Ordering information STPS1H100MF

3 Ordering information

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPS1H100MF M11 STmite flat 16 mg 12000 Tape and reel

4 Revision history

Table 7. Document revision history

Date Revision Changes

15-May-2008 1 First issue.

6/7

STPS1H100MF

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